Kushanda musimboti weN-channel yekusimudzira maitiro MOSFET

(1) Iyo yekudzora maitiro evGS pane ID uye chiteshi

① Nyaya yevGS=0

Zvinogona kuoneka kuti kune maviri ekudzokera-kumashure-kumashure PN majenji pakati pekudonhedza d uye sosi s yekusimudzira-modhi.MOSFET.

Kana gedhi-source voltage vGS = 0, kunyangwe iyo drain-source voltage vDS yawedzerwa, uye zvisinei neiyo polarity yevDS, panogara paine PN junction mune reverse biased state. Iko hakuna conductive chiteshi pakati pekudonhedza uye kunobva, saka iyo yekudonhedza ikozvino ID≈0 panguva ino.

② Nyaya yevGS> 0

Kana vGS> 0, munda wemagetsi unogadzirwa muSiO2 insulating layer pakati pegedhi ne substrate. Nhungamiro yemunda wemagetsi inotenderera kumunda wemagetsi unotungamirirwa kubva pasuwo kusvika kune substrate pane semiconductor pamusoro. Iyi nzvimbo yemagetsi inodzinga maburi uye inokwezva maerekitironi. Makomba ekudzinga: Maburi ari muP-type substrate ari padhuze negedhi anodzingwa, achisiya asingafambi anobvuma maion (negative ions) kuti aite depletion layer. Kukwezva maerekitironi: Maerekitironi (vatakuri vashoma) ari muP-type substrate anokwezvwa nepamusoro pe substrate.

(2) Kugadzira conductive chiteshi:

Kana kukosha kwevGS kuri kudiki uye kugona kukwezva maerekitironi kusina kusimba, hapasati pasisina mugero wekuitisa pakati pemugero nekwakabva. Sezvo vGS ichiwedzera, maerekitironi akawanda anokwezvwa nepamusoro pechikamu cheP substrate. Kana vGS yasvika pane imwe kukosha, maerekitironi aya anoumba N-mhando yakatetepa layer pamusoro peP substrate pedyo negedhi uye akabatana nematunhu maviri eN+, achigadzira N-mhando conductive chiteshi pakati pemvura uye kwakabva. Rudzi rwayo rwekufambisa rwakapesana nereP substrate, saka inonziwo inversion layer. Iyo vGS yakakura ndeye, iyo simba remagetsi rinoshanda pane semiconductor pamusoro iri, maerekitironi akawanda anokwezvwa pamusoro peP substrate, iyo yakakora iyo conductive chiteshi, uye idiki kushongedzwa kwegwara. Iyo gedhi-source voltage kana chiteshi chinotanga kuumbwa chinonzi turn-on voltage, inomiririrwa neVT.

TheN-chiteshi MOSFETyakurukurwa pamusoro haigone kuumba conductive chiteshi kana vGS <VT, uye chubhu iri munzvimbo yakachekwa. Chete kana vGS≥VT inogona kuumbwa chiteshi. Rudzi urwuMOSFETiyo inofanirwa kuumba conductive chiteshi kana vGS≥VT ichinzi yekusimudzira-modhiMOSFET. Mushure mekunge chiteshi chaumbwa, mvura yekudonha inogadzirwa kana vhezheni yekumberi vDS ichiiswa pakati pemvura uye sosi. Kufurira kwevDS paID, kana vGS> VT uye iri imwe kukosha, pesvedzero yedrain-source voltage vDS pane conductive chiteshi uye ID yazvino yakafanana neyeiyo junction field effect transistor. Kudonha kwevoltage kunogadzirwa neiyo Drain yazvino ID padivi pechiteshi inoita kuti ma voltages pakati pega rega mugedhi uye gedhi risisaenzane. Voltage iri kumagumo pedyo nekwakabva ndiyo hombe, uko mugero wakakora. Iyo voltage pamagumo emvura ndiyo idiki, uye kukosha kwayo iVGD = vGS-vDS, saka chiteshi ndicho chakaonda pano. Asi kana vDS idiki (vDS