Ndeapi matunhu mana eMOSFET?

Iwo mana matunhu eN-chiteshi kusimudzira MOSFET

(1) Variable resistance region (inonziwo unsaturated region)

Ucs" Ucs (th) (turn-on voltage), uDs" UGs-Ucs (th), idunhu riri kuruboshwe kweiyo yakamisikidzwa trace mumufananidzo unobatidzwa chiteshi. Kukosha kweUDs kudiki mudunhu rino, uye kuramba kwechiteshi kunodzorwa chete neUGs. Kana uGs iine chokwadi, ip uye uDs muhukama hwemutsara, dunhu rinofungidzirwa seti yemitsara yakatwasuka. Panguva ino, munda wekuita chubhu D, S pakati peyakaenzana nevoltage UGS

Inodzorwa neiyo voltage UGS kusiyanisa kuramba.

(2) inogara iripo dunhu (inozivikanwawo sesaturation dunhu, amplification dunhu, inoshanda dunhu)

Ucs ≥ Ucs (h) uye Ubs ≥ UcsUssth), yemufananidzo wekurudyi rwekutangira-pinch off track, asi haisati yaputsika mudunhu, mudunhu, apo maGs anofanira kunge ari, ib anenge asina. kuchinja neUDs, chinhu chinogara chiripo. ini ndinodzorwa chete nemaUG, ipapo iyo MOSFETD, S yakaenzana nevoltage uGs kutonga kweyazvino sosi. MOSFET inoshandiswa mukusimudzira maseketi, kazhinji pabasa reMOSFET D, S yakaenzana nevoltage uGs control current source. MOSFET inoshandiswa mumaseketi ekusimudzira, inowanzoshanda mudunhu, inozivikanwawo senzvimbo yekusimudzira.

(3) Clip-off nzvimbo (inonziwo nzvimbo yekucheka)

Clip-off nzvimbo (inozivikanwawo senzvimbo yakachekwa) kusangana neucs "Ues (th) yemufananidzo padyo neaxis yakachinjika yedunhu, chiteshi chese chakavharwa, chinozivikanwa se clip off, io = 0 , chubhu haishande.

(4) nzvimbo yekuputsa nzvimbo

Nharaunda yekuputsika iri munharaunda iri kurudyi rwemufananidzo. Nekuwedzera kweUDs, iyo PN junction inoiswa kune yakawandisa reverse voltage uye kuparara, ip inowedzera zvakanyanya. Iyo chubhu inofanirwa kushandiswa kuitira kuti isashande munzvimbo yekuparara. Iyo yekuchinjisa hunhu curve inogona kutorwa kubva kune inobuda maitiro curve. Panzira inoshandiswa segirafu kuwana. Semuenzaniso, muFigure 3 (a) yeUbs = 6V mutsara wakatwasuka, mharadzano yaro nemhando dzakasiyana-siyana dzinoenderana neiyo i, Us tsika mu ib- Uss inoronga yakabatana kune curve, ndiko kuti, kuwana kuchinjisa maitiro curve.

Parameters yeMOSFET

Kune akawanda maparamendi eMOSFET, anosanganisira DC paramita, AC paramita uye miganhu paramita, asi anotevera chete maparamita anofanirwa kuve ane chekuita nekushandiswa kwakafanana: saturated drain-source ikozvino IDSS pinch-off voltage Up, (junction-type machubhu uye kupera simba. -mhando insulated-gedhi machubhu, kana kutendeuka-on voltage UT (yakasimbiswa insulated-gedhi machubhu), trans-conductance gm, kuvuza-sosi breakdown voltage BUDS, yakanyanya disipated simba PDSM, uye yakanyanya drain-source ikozvino IDSM.

(1) Saturated drain current

Iyo yakazadzwa yedhiraivha yazvino IDSS ndiyo yekudonhedza ikozvino mujenji kana depletion mhando insulated gedhi MOSFET kana gedhi voltage UGS = 0.

(2) Clip-off voltage

Iyo pinch-off voltage UP igedhi remagetsi mune jena-mhando kana depletion-mhando insulated-gedhi MOSFET inongodimbura pakati pedhiraini uye kunobva. Sezvinoratidzwa mu4-25 yeN-channel chubhu UGS ID curve, inogona kunzwisiswa kuona kukosha kweIDSS uye UP.

MOSFET matunhu mana

(3) Kushandura magetsi

Iyo yekutendeuka-on voltage UT ndiyo yegedhi voltage mune yakasimbiswa insulated-gedhi MOSFET inoita kuti inter-drain-source ingoita conductive.

(4) Transconductance

Iyo transconductance gm isimba rekutonga regedhi source voltage UGS pane yekudonhedza ikozvino ID, kureva, chiyero chekuchinja mudhiraini ikozvino ID kune shanduko yegedhi source voltage UGS. 9m yakakosha paramende inorema kugona kweiyo amplificationMOSFET.

(5) Drain source breakdown voltage

Drain source breakdown voltage BUDS inoreva gedhi sosi voltage UGS imwe, MOSFET yakajairwa kushanda inogona kugamuchira iyo yakanyanya drain source voltage. Uyu ndiwo muganho paramende, yakawedzerwa kune MOSFET inoshanda voltage inofanira kunge iri pasi peBUDS.

(6) Maximum Power Dissipation

Maximum simba dissipation PDSM zvakare muganhu paramende, inoreva iyoMOSFETmashandiro haaparare kana iyo yepamusoro inobvumirwa leakage sosi simba kupera. Paunenge uchishandisa iyo MOSFET inoshanda mashandisiro emagetsi anofanirwa kunge ari mashoma pane iyo PDSM uye osiya imwe margin.

(7) Maximum Drain Current

Maximum leakage yazvino IDSM ndeimwe muganhu paramende, inoreva kushanda kwakajairwa kweMOSFET, sosi yekuvuza yeazvino inobvumidzwa kupfuura neMOSFET's inoshanda ikozvino haifanire kudarika IDSM.

MOSFET Operating Principle

Nheyo yekushandisa yeMOSFET (N-channel yekusimudzira MOSFET) ndeye kushandisa VGS kudzora huwandu hwe "inductive charge", kuitira kushandura mamiriro eiyo conductive chiteshi inoumbwa neaya "inductive charge", uyezve kuzadzisa chinangwa. yekudzora iyo drain current. Chinangwa ndechekudzora mvura inoyerera. Mukugadzira machubhu, kuburikidza nekuita kwekuita nhamba yakawanda yeayoni yakanaka mu insulating layer, saka kune rimwe divi reiyo interface inogona kukonzereswa mhosva dzakaipa, idzi mhosva dzisina kunaka dzinogona kukonzereswa.

Kana gedhi remagetsi richichinja, huwandu hwekuchaja hwakakonzerwa muchiteshi hunochinjawo, hupamhi hweiyo conductive chiteshi hunochinjawo, uye nekudaro iyo yekudonha ikozvino ID inoshanduka negedhi voltage.

MOSFET basa

I. MOSFET inogona kuiswa mukukudza. Nekuda kweiyo yakakwira yekupinza impedance yeMOSFET amplifier, iyo coupling capacitor inogona kuve diki simba, pasina kushandisa electrolytic capacitors.

Chechipiri, iyo yakakwira yekupinza impedance yeMOSFET yakanyatsokodzera kushandurwa kwe impedance. Inowanzo shandiswa mune yakawanda-nhanho amplifier yekuisa nhanho yekushandurwa kwe impedance.

MOSFET inogona kushandiswa seyakasiyana resistor.

Chechina, MOSFET inogona kushandiswa nyore nyore seyagara iripo sosi.

Chechishanu, MOSFET inogona kushandiswa seyemagetsi switch.