Nzwisisa MOSFET mune imwe chinyorwa

Simba semiconductor midziyo inoshandiswa zvakanyanya muindasitiri, kushandiswa, mauto uye mamwe minda, uye ine yakakwirira hurongwa chinzvimbo. Ngatitarisei mufananidzo wakazara wemidziyo yemagetsi kubva pamufananidzo:

Simba semiconductor midziyo inogona kukamurwa kuita yakazara mhando, semi-inodzorwa mhando uye isingadzoreki mhando zvichienderana nedhigirii rekutonga kwezviratidzo zvedunhu. Kana zvinoenderana nechiratidzo cheiyo yedunhu rekutyaira, inogona kukamurwa kuita voltage-inotyairwa mhando, yazvino-inotyairwa mhando, nezvimwe.

Classification	type	Yakananga simba semiconductor zvishandiso
Kudzora kwezviratidzo zvemagetsi	Semi-inodzorwa mhando	SCR
	Kudzora kwakazara	GTO, GTR, MOSFET, IGBT
	Kusadzoreka	Power Diode
Kutyaira chiratidzo zvivakwa	Voltage inofambiswa mhando	IGBT, MOSFET, SITH
Kutyaira chiratidzo zvivakwa	Current driven type	SCR, GTO, GTR
Inoshanda chiratidzo waveform	Pulse trigger type	SCR, GTO
Inoshanda chiratidzo waveform	Electronic control type	GTR, MOSFET, IGBT
Mamiriro ezvinhu umo maerekitironi anotakura ikozvino anotora chikamu	bipolar device	Power Diode, SCR, GTO, GTR, BSIT, BJT
	Unipolar mudziyo	MOSFET, SIT
	Composite mudziyo	MCT, IGBT, SITH uye IGCT

Yakasiyana simba semiconductor zvishandiso zvine maitiro akasiyana senge voltage, ikozvino kugona, impedance kugona, uye saizi. Mukushandiswa chaiko, michina yakakodzera inoda kusarudzwa zvinoenderana neminda yakasiyana uye zvinodiwa.

Hunhu hwakasiyana hweakasiyana simba semiconductor zvishandiso

Iyo semiconductor indasitiri yakapfuura nezvizvarwa zvitatu zvekuchinja kwezvinhu kubva pakuzvarwa kwayo. Kusvika ikozvino, yekutanga semiconductor zvinhu inomiririrwa naSi ichiri kunyanya kushandiswa mumunda wemagetsi semiconductor zvishandiso.

Semiconductor zvinhu		Bandgap (eV)	Melting point(K)	main application
1st chizvarwa semiconductor zvinhu	Ge	1.1	1221	Low voltage, low frequency, medium power transistors, photodetectors
2nd chizvarwa semiconductor zvinhu	Si	0.7	1687
3rd chizvarwa semiconductor zvinhu	GaAs	1.4	1511	Microwave, millimeter wave zvishandiso, mwenje-emitting zvishandiso
	SiC	3.05	2826	1. High-temperature, high-frequency, radiation-resistant high-power devices 2. Bhuruu, giredhi, violet light-emitting diodes, semiconductor lasers
	GaN	3.4	1973
	AIN	6.2	2470
	C	5.5	＞3800
	ZnO	3.37	2248

Pfupisa hunhu hwesemi-inodzorwa uye inodzorwa zvizere magetsi emagetsi:

Chishandiso mhando	SCR	GTR	MOSFET	IGBT
Kudzora mhando	Pulse trigger	Current control	voltage control	firimu centre
self-shutoff line	Kudzimwa kwekuchinja	mudziyo wokudzima	mudziyo wokudzima	mudziyo wokudzima
kushanda frequency	＜1khz	＜30khz	20khz-Mhz	＜40khz
Kutyaira simba	diki	hombe	diki	diki
kuchinja kurasikirwa	hombe	hombe	hombe	hombe
conduction kurasikirwa	diki	diki	hombe	diki
Voltage uye ikozvino level	最大	hombe	miniminimum	zvimwe
Maitiro ekushandisa	Medium frequency induction heat	UPS frequency converter	kushandura magetsi	UPS frequency converter
mutengo	yakaderera	pasi	pakati	Iyo inodhura zvakanyanya
conductance modulation effect	have	have	hapana	have

Ziva maMOSFET

MOSFET ine yakakwira yekupinza impedance, yakaderera ruzha, uye yakanaka kugadzikana kwemafuta; ine nzira yakapfava yekugadzira uye nemwaranzi yakasimba, saka inowanzoshandiswa mumaseketi amplifier kana switching circuits;

(1) Main kusarudzwa paramita: drain-source voltage VDS (inomira nevoltage), ID inoenderera ichidonha ikozvino, RDS (pa) pa-resistance, Ciss yekupinda capacitance (junction capacitance), mhando yemhando FOM=Ron * Qg, nezvimwe.

(2) Zvinoenderana nemaitiro akasiyana, yakakamurwa kuita TrenchMOS: mugero MOSFET, kunyanya munzvimbo yakaderera yemagetsi mukati me100V; SGT (Split Gate) MOSFET: kupatsanura gedhi MOSFET, kunyanya mundima yepakati uye yakaderera voltage mukati me200V; SJ MOSFET: super junction MOSFET, kunyanya muHigh voltage field 600-800V;

Mumagetsi ekushandura magetsi, akadai sevhareti yakazaruka, dhiraini yakabatana nemutoro wakasimba, iyo inonzi yakazaruka-drain. Mudunhu rakavhurika-dhiraini, zvisinei kuti yakakwira sei voltage iyo mutoro wakabatana, mutoro wezvino unogona kuvhurwa nekudzimwa. Iyo yakanaka analog switching mudziyo. Iyi ndiyo musimboti weMOSFET sechinhu chinochinja.

Panyaya yemugove wemusika, maMOSFET anenge ese akaiswa mumaoko evagadziri vakuru vekunze. Pakati pavo, Infineon akawana IR (American International Rectifier Company) muna 2015 uye akava mutungamiri weindasitiri. ON Semiconductor akapedzawo kutora Fairchild Semiconductor muna September 2016. , mugove wemusika wakasvetukira kunzvimbo yechipiri, uye ipapo kutengesa kwekutengesa kwaiva Renesas, Toshiba, IWC, ST, Vishay, Anshi, Magna, nezvimwewo;

Mainstream MOSFET mhando dzakakamurwa kuita akati wandei akateedzana: American, Japanese uye Korean.

American series: Infineon, IR, Fairchild, ON Semiconductor, ST, TI, PI, AOS, nezvimwewo;

Japanese: Toshiba, Renesas, ROHM, zvichingodaro;

Korean series: Magna, KEC, AUK, Morina Hiroshi, Shinan, KIA

MOSFET mapakeji mapoka

Zvinoenderana nemagadzirirwo ayo akaiswa paPCB board, kune maviri makuru marudzi eMOSFET mapakeji: plug-in (Kuburikidza neHole) uye pamusoro pegomo (Surface Mount). .

Iyo plug-in mhando inoreva kuti mapini eMOSFET anopfuura nemaburi ePCB board uye anosungirirwa kuPCB board. Akajairika plug-in mapakeji anosanganisira: dual in-line package (DIP), transistor outline package (TO), uye pini grid array package (PGA).

Plug-in packaging

Kukwirisa kwepamusoro ndiko uko mapini eMOSFET uye kupisa kwekupisa flange kunosungirirwa kumapadhi ari pamusoro pePCB board. Yakajairika pamusoro pemapakeji ekumisikidza anosanganisira: transistor outline (D-PAK), diki outline transistor (SOT), diki rondedzero pasuru (SOP), quad flat package (QFP), plastiki leaded chip carrier (PLCC), nezvimwe.

pamusoro pegomo pasuru

Nekuvandudzwa kwetekinoroji, mabhodhi ePCB akadai semabhodhi eamai uye makadhi emifananidzo parizvino anoshandisa kushomeka uye kushoma kwakananga plug-in kurongedza, uye yakawanda pamusoro pegomo yekurongedza inoshandiswa.

1. Dual in-line package (DIP)

Iyo DIP package ine mitsara miviri yemapini uye inoda kuiswa muchip socket ine DIP chimiro. Nzira yekutorwa kwayo ndeye SDIP (Shrink DIP), inova shrink kaviri-mu-mutsara package. Kuwanda kwepini kwakapetwa katanhatu kupfuura iyo yeDIP.

DIP yekurongedza maumbirwo mafomu anosanganisira: multi-layer ceramic dual-in-line DIP, single-layer ceramic dual-in-line DIP, lead frame DIP (inosanganisira girazi-ceramic sealing type, plastic encapsulation structure type, ceramic low-melting glass encapsulation type) etc. Hunhu hweDIP kurongedza ndeyekuti inokwanisa kuona zviri nyore kuburikidza ne-hole welding yePCB board uye inoenderana zvakanaka ne motherboard.

Nekudaro, nekuti nzvimbo yayo yekurongedzera uye ukobvu zvakakura, uye mapini ari nyore kukuvadzwa panguva yeplugging uye unplugging process, kuvimbika hakuna kunaka. Panguva imwecheteyo, nekuda kwekuita kwemaitiro, nhamba yepini kazhinji haipfuuri 100. Nokudaro, muhutano hwekubatanidzwa kwepamusoro kwekambani yemagetsi, DIP packaging yakabviswa zvishoma nezvishoma kubva padanho renhoroondo.

2. Transistor Outline Package (TO)

Madiro ekutanga ekurongedza, akadai se TO-3P, TO-247, TO-92, TO-92L, TO-220, TO-220F, TO-251, nezvimwewo zvese plug-in yekurongedza dhizaini.

TO-3P/247: Iyo inowanzoshandiswa kurongedza fomu yepakati-yakakwirira voltage uye yakakwirira-ikozvino MOSFETs. Chigadzirwa chacho chine hunhu hweiyo high stand voltage uye yakasimba kuputsa kuramba. .

TO-220/220F: TO-220F ipurasitiki yakazara pasuru, uye hapana chikonzero chekuwedzera insulating pad paunenge uchiisa pane radiator; TO-220 ine simbi yesimbi yakabatana nepini yepakati, uye inodzivirira padhi inodiwa pakuisa radiator. Iwo maMOSFET eaya maviri mapakeji masitayipi ane chitarisiko chakafanana uye anogona kushandiswa zvakasiyana. .

TO-251: Ichi chigadzirwa chakaputirwa chinonyanya kushandiswa kuderedza mutengo uye kuderedza saizi yechigadzirwa. Inonyanya kushandiswa munzvimbo dzine mhepo yepakati uye yakakwira ikozvino pazasi 60A uye yakakwira voltage pazasi 7N. .

TO-92: Iyi pasuru inongoshandiswa kune yakaderera-voltage MOSFET (ikozvino pazasi 10A, inomira voltage pazasi 60V) uye yakakwirira-voltage 1N60/65, kuitira kuderedza mutengo.

Mumakore achangopfuura, nekuda kwemutengo wakakwira wekushongedza we plug-in kurongedza maitiro uye yakaderera kupisa kupisa kuita kune chigamba-mhando zvigadzirwa, kudiwa mumusika wepamusoro-soro kuri kuramba kuchiwedzera, izvo zvakonzerawo kuvandudzwa kweTO kurongedza. kupinda pamusoro pegomo packaging.

TO-252 (inonziwo D-PAK) uye TO-263 (D2PAK) ese ari maviri pamusoro pemapakeji..

TO package yechigadzirwa chitarisiko

TO252/D-PAK ipurasitiki chip package, iyo inowanzoshandiswa kurongedza magetsi transistors uye voltage stabilizing chips. Ndiyo imwe yeazvino mainstream package. Iyo MOSFET inoshandisa iyi yekurongedza nzira ine matatu maelectrode, gedhi (G), dhiraini (D), uye tsime (S). Drein (D) pini inogurwa uye haina kushandiswa. Pane kudaro, kupisa kunyura kumusana kunoshandiswa semvura (D), iyo inosungirirwa zvakananga kuPCB. Kune rumwe rutivi, inoshandiswa kuburitsa mafungu makuru, uye kune rumwe rutivi, inobvisa kupisa kuburikidza nePCB. Naizvozvo, kune matatu maD-PAK padhi paPCB, uye iyo yekudhonza (D) padhi yakakura. Kurongeka kwayo kwekurongedza ndeiyi:

TO-252/D-PAK saizi yemapasuru

TO-263 mutsauko we TO-220. Inonyanya kugadzirirwa kuvandudza kushanda kwekugadzira uye kupisa kupisa. Inotsigira yakanyanya kukwira ikozvino uye voltage. Iyo inowanzojairika mune yepakati-voltage yakakwira-ikozvino MOSFETs pazasi 150A uye pamusoro pe30V. Pamusoro peD2PAK (TO-263AB), inosanganisirawo TO263-2, TO263-3, TO263-5, TO263-7 uye mamwe masitayera, ari pasi pe TO-263, kunyanya nekuda kwehuwandu hwakasiyana uye chinhambwe chepini. .

TO-263/D2PAK pasuru saizi yakatarwas

3. Pini grid array package (PGA)

Kune akawanda square array pini mukati uye kunze kwePGA (Pin Grid Array Package) chip. Imwe neimwe square array pini inorongwa pane imwe chinhambwe kutenderedza chip. Zvichienderana nehuwandu hwepini, inogona kuumbwa kuita 2 kusvika ku5 madenderedzwa. Panguva yekuisa, ingoisa chip mune yakakosha PGA socket. Iyo ine zvakanakira plugging uye unplugging uye yakakwirira kuvimbika, uye inogona kuchinjika kune yakakwirira ma frequency.

PGA package style

Mazhinji eiyo chip substrates akagadzirwa neceramic zvinhu, uye mamwe anoshandisa yakakosha epurasitiki resin se substrate. Nezve tekinoroji, iyo pini yepakati kureba inowanzoita 2.54mm, uye nhamba yepini inotangira kubva 64 kusvika 447. Chimiro cherudzi urwu rwekurongedza ndechekuti diki nzvimbo yekurongedza (vhoriyamu), iyo yakaderera kushandiswa kwesimba (kuita. ) inogona kumira, uye neimwe nzira. Iyi yekurongedza maitiro emachipisi yaive yakajairika mumazuva ekutanga, uye yainyanya kushandiswa kurongedza akakwira-simba rekushandisa zvigadzirwa zvakaita seCPU. Semuenzaniso, Intel's 80486 nePentium vese vanoshandisa iyi yekurongedza maitiro; haina kugamuchirwa zvakanyanya nevagadziri veMOSFET.

4. Diki Outline Transistor Package (SOT)

SOT (Small Out-Line Transistor) rudzi rwechigamba chidiki chemagetsi transistor package, kunyanya kusanganisira SOT23, SOT89, SOT143, SOT25 (kureva SOT23-5), etc. SOT323, SOT363/SOT26 (kureva SOT23-6) nemamwe marudzi ari yakabva, idiki muhukuru pane TO mapakeji.

SOT package mhando

SOT23 inowanzoshandiswa transistor package ine mapini matatu akaita semapapiro, anoti muunganidzi, emitter uye base, ayo akanyorwa pamativi ese erutivi rurefu rwechikamu. Pakati pavo, emitter uye chigadziko chiri padivi rimwe chete. Iwo akajairika mune yakaderera-simba transistors, field effect transistors uye composite transistors ine resistor network. Vane simba rakanaka asi murombo solderability. Kuonekwa kunoratidzwa mumufananidzo (a) pazasi.

SOT89 ine mapini mapfupi matatu akagoverwa kune rimwe divi re transistor. Rumwe rutivi isimbi yekupisa singi yakabatana kune hwaro kuti iwedzere kupisa kwekupisa kugona. Iyo yakajairika musilicon simba pamusoro pegomo transistors uye inokodzera epamusoro masimba ekushandisa. Chitarisiko chinoratidzwa mumufananidzo (b) pazasi. .

SOT143 ine mapini mana mapfupi akaita semapapiro, ayo anotungamirwa kubva kumativi ese. Mugumo wakafara wepini ndiye muunganidzi. Rudzi urwu rwepakeji runowanzo mu-high-frequency transistors, uye kutaridzika kwayo kunoratidzwa muMufananidzo (c) pazasi. .

SOT252 i-high-power transistor ine mapini matatu anotungamira kubva kune rimwe divi, uye yepakati pini ipfupi uye ndiye muunganidzi. Batanidza nepini hombe kune rumwe rutivi, inova shizha remhangura rekubvisa kupisa, uye chimiro charo sezviri kuratidzwa muMufananidzo (d) pazasi.

Yakajairika SOT package kutaridzika kuenzanisa

Iyo ina-terminal SOT-89 MOSFET inowanzoshandiswa pamabhodhi eamai. Madimikira ayo uye chiyero ndeaya anotevera:

SOT-89 MOSFET saizi yakatarwa (chikamu: mm)

5. Diki Rondedzero Package (SOP)

SOP (Small Out-Line Package) ndeimwe yemapakeji epamusoro, anonziwo SOL kana DFP. Mapini anodhonzwa kubva kumativi ese epasuru mune seagull bapiro chimiro (L chimiro). Zvigadzirwa zvepurasitiki uye ceramic. SOP packaging standards dzinosanganisira SOP-8, SOP-16, SOP-20, SOP-28, etc. Nhamba mushure meSOP inoratidza nhamba yepini. Mazhinji MOSFET SOP mapakeji anotora SOP-8 zvakatemwa. Indasitiri iyi inowanzosiya "P" uye inodimbura seSO (Small Out-Line).

SOP-8 package saizi

SO-8 yakatanga kugadzirwa nePHILIP Company. Yakaputirwa mupurasitiki, haina kupisa kwepasi ndiro yepasi, uye haina kupisa kwakashata. Inowanzo shandiswa kune yakaderera-simba MOSFETs. Gare gare, zvinyorwa zvakajairika zvakadai seTSOP (Thin Small Outline Package), VSOP (Very Small Outline Package), SSOP (Shrink SOP), TSSOP (Thin Shrink SOP), nezvimwewo zvakatorwa zvishoma nezvishoma; pakati pavo, TSOP uye TSSOP anowanzo shandiswa muMOSFET kurongedza.

SOP inotorwa zvakatemwa zvinowanzoshandiswa kune MOSFETs

6. Quad Flat Package (QFP)

Chinhambwe chiri pakati pepini chip muQFP (Plastiki Quad Flat Package) pasuru idiki kwazvo uye mapini akatetepa kwazvo. Inowanzoshandiswa mumasekete makuru kana e-ultra-makuru akabatanidzwa, uye nhamba yepini inowanzopfuura 100. Chips akaiswa mufomu iyi anofanira kushandisa SMT surface mounting teknolojia kutengesa chip kubhobho reamai. Iyi yekurongedza nzira ine maitiro mana makuru: ① Yakakodzera SMD pamusoro inokwira tekinoroji yekuisa wiring paPCB edunhu mabhodhi; ② Inokodzera kushandiswa kwepamusoro-frequency; ③ Zviri nyore kushanda uye ine yakakwirira kuvimbika; ④ Huyero pakati peiyo chip nzvimbo nenzvimbo yekurongedza idiki. Kufanana nePGA yekurongedza nzira, iyi nzira yekurongedza inoputira chip mupurasitiki pasuru uye haigone kubvisa kupisa kunogadzirwa kana chip iri kushanda nenguva. Inorambidza kuvandudzwa kweMOSFET kuita; uye kurongedza kwepurasitiki pachayo kunowedzera ukuru hwechigadzirwa, icho chisingaenderane nezvinodiwa pakuvandudzwa kwesemiconductors munzira yekuve yakareruka, yakaonda, pfupi, uye diki. Uye zvakare, iyi mhando yekurongedza nzira yakavakirwa pane imwechete chip, iyo ine matambudziko ekushomeka kwekugadzira kunyatsoita uye yakakwirira yekurongedza mutengo. Naizvozvo, QFP inonyanya kukodzera kushandiswa mudhijitari logic LSI maseketi senge microprocessors / gedhi arrays, uye yakakodzerawo kurongedza analog LSI redunhu zvigadzirwa seVTR chiratidzo chekugadzirisa uye odhiyo chiratidzo chekugadzirisa.

7, Quad flat package isina inotungamira (QFN)

Iyo QFN (Quad Flat Non-lead package) pasuru ine maelectrode contacts pamativi mana ese. Sezvo pasina anotungamira, nzvimbo yekumisikidza idiki pane QFP uye kureba kwakadzikira pane QFP. Pakati pazvo, ceramic QFN inodaidzwa zvakare LCC (Leadless Chip Carriers), uye yakaderera-mutengo epurasitiki QFN uchishandisa girazi epoxy resin yakadhindwa substrate base zvinhu inonzi plastiki LCC, PCLC, P-LCC, nezvimwewo. tekinoroji ine diki padhi saizi, vhoriyamu diki, uye plastiki sechinhu chekuisa chisimbiso. QFN inonyanya kushandiswa kune yakabatanidzwa yedunhu kurongedza, uye MOSFET haizoshandiswe. Nekudaro, nekuti Intel yakurudzira mutyairi akasanganiswa uye MOSFET mhinduro, yakatanga DrMOS muQFN-56 package ("56" inoreva makumi mashanu neshanu mapini ekuseri kwechip).

Izvo zvinofanirwa kucherechedzwa kuti iyo QFN package ine yakafanana ekunze inotungamira gadziriso seyekupedzisira-yakaonda diki pepa rekutaura (TSSOP), asi saizi yayo idiki 62% pane TSSOP. Zvinoenderana nedatha yekuenzanisira yeQFN, kuita kwayo kupisa kwakakwira 55% kupfuura iyo yeTSSOP yekurongedza, uye kushanda kwayo kwemagetsi (inductance uye capacitance) i60% uye 30% yakakwirira kupfuura TSSOP yekurongedza zvichiteerana. Kunyanya kukanganisa ndechokuti zvakaoma kugadzirisa.

DrMOS muQFN-56 package

Traditional discrete DC/DC nhanho-pasi switching magetsi emagetsi haagone kuzadzisa zvinodiwa kune yakakwirira simba density, uye haakwanise kugadzirisa dambudziko reparasitic parameter mhedzisiro pakakwirira switching frequencies. Nekuvandudzwa uye kufambira mberi kwetekinoroji, chave chokwadi kubatanidza vatyairi uye MOSFETs kuvaka akawanda-chip module. Iyi nzira yekubatanidza inogona kuchengetedza nzvimbo yakakura uye kuwedzera simba rekushandisa density. Kuburikidza nekugadzirisa kwevatyairi uye MOSFETs, zvave chokwadi. Kushanda kwesimba uye yepamusoro-mhando DC ikozvino, iyi DrMOS yakabatanidzwa mutyairi IC.

Renesas 2nd chizvarwa DrMOS

Iyo QFN-56 isina lead pasuru inoita kuti DrMOS thermal impedance iderere; ine yemukati wire bonding uye mhangura clip dhizaini, yekunze PCB wiring inogona kudzikiswa, nekudaro ichidzikisa inductance uye kuramba. Mukuwedzera, iyo yakadzika-chiteshi silicon MOSFET maitiro anoshandiswa anogona zvakare kuderedza zvakanyanya conduction, switching uye gedhi rekuchaja kurasikirwa; inoenderana neakasiyana-siyana ekudzora, anogona kuwana akasiyana maitiro ekushandisa, uye inotsigira inoshanda chikamu chekushandura mode APS (Auto Phase Switching). Pamusoro peQFN kurongedza, bilateral flat no-lead packaging (DFN) zvakare inzira nyowani yekurongedza yemagetsi iyo yakashandiswa zvakanyanya muzvikamu zvakasiyana zveON Semiconductor. Kuenzaniswa neQFN, DFN ine mashoma ekutungamirira-kunze maelectrode pamativi ese.

8, Plastic Leaded Chip Carrier (PLCC)

PLCC (Plastiki Quad Flat Package) ine sikweya chimiro uye idiki zvakanyanya pane yeDIP package. Iine mapini makumi matatu nemaviri ane mapini kumativi ese. Mapini anotungamirwa kubva kumativi mana epasuru mune T-chimiro. Icho chigadzirwa chepurasitiki. Iyo pini yepakati kureba ndeye 1.27mm, uye nhamba yepini inotangira kubva 18 kusvika 84. Mapini akafanana neJ haana kuremara nyore uye ari nyore kushanda kupfuura QFP, asi kutariswa kwekuonekwa mushure mekuputika kwakanyanya kuoma. PLCC kurongedza kwakakodzera kuisa wiring paPCB uchishandisa SMT pamusoro pekukwira tekinoroji. Iine zvakanakira diki diki uye yakakwirira kuvimbika. PLCC kurongedza yakajairika uye inoshandiswa mune logic LSI, DLD (kana chirongwa logic mudziyo) uye mamwe maseketi. Iri fomu rekurongedza rinowanzo shandiswa mubhobhobhobho reBIOS, asi parizvino harina kunyanya kuwanda muMOSFETs.

Encapsulation uye kuvandudzwa kwemabhizinesi makuru

Nekuda kwemaitiro ekuvandudza kweyakaderera voltage uye yakakwira ikozvino muCPUs, maMOSFET anodiwa kuti ave nehombe yekubuda ikozvino, yakaderera pa-resistance, yakaderera kupisa chizvarwa, kukurumidza kupisa kupisa, uye diki saizi. Pamusoro pekuvandudza tekinoroji yekugadzira chip uye maitiro, vagadziri veMOSFET vanoenderera mberi nekuvandudza tekinoroji yekurongedza. Pahwaro hwekuenderana neyakajairwa chitarisiko zvakatemwa, ivo vanokurudzira mitsva yekurongedza maumbirwo uye kunyoresa mazita echiratidzo emapakeji matsva avanogadzira.

1, RENESAS WPAK, LFPAK uye LFPAK-I mapakeji

WPAK ndeye yakanyanya kupisa radiation package yakagadzirwa neRenesas. Nekutevedzera iyo D-PAK package, chip heat sink inosungirirwa kubhodhi reamai, uye kupisa kunobviswa kuburikidza nebhodhi reamai, kuitira kuti iyo diki package WPAK ikwanisewo kusvika kune yazvino kubuda yeD-PAK. WPAK-D2 mapakeji maviri akakwira / akaderera MOSFETs kuderedza wiring inductance.

Renesas WPAK pasuru saizi

LFPAK neLFPAK-Ini mamwe maviri madiki fomu-factor mapakeji akagadzirwa neRenesas anowirirana neSO-8. LFPAK yakafanana neD-PAK, asi idiki pane D-PAK. LFPAK-i inoisa kupisa kunyura kumusoro kuti iparadze kupisa kuburikidza nekupisa kwekunyura.

Renesas LFPAK uye LFPAK-I mapakeji

2. Vishay Power-PAK uye Polar-PAK packaging

Power-PAK ndiro zita reMOSFET rakanyoreswa neVishay Corporation. Simba-PAK rinosanganisira zvirevo zviviri: Simba-PAK1212-8 uye Simba-PAK SO-8.

Vishay Power-PAK1212-8 package

Vishay Power-PAK SO-8 package

Polar PAK pasuru diki ine mativi maviri-mativi kupisa kupisa uye ndeimwe yeVishay's core packaging tekinoroji. Polar PAK yakafanana neyakajairika so-8 package. Iine mapoinzi ekubvisa pamativi ese epamusoro uye ezasi epasuru. Hazvisi nyore kuunganidza kupisa mukati mepakeji uye zvinogona kuwedzera huwandu hwazvino hwekushanda ikozvino kusvika kaviri iyo yeSO-8. Parizvino, Vishay ane rezinesi rePolar PAK tekinoroji kuSTMicroelectronics.

Vishay Polar PAK package

3. Onsemi SO-8 uye WDFN8 flat lead packages

ON Semiconductor yakagadzira marudzi maviri e-flat-lead MOSFETs, pakati peiyo SO-8 inowirirana flat-lead iyo inoshandiswa nemapuranga akawanda. PANE Semiconductor ichangobva kutangwa NVMx uye NVTx simba MOSFETs anoshandisa compact DFN5 (SO-8FL) uye WDFN8 mapakeji kuderedza conduction kurasikirwa. Iyo ine zvakare yakaderera QG uye capacitance yekudzikisa kurasikirwa kwemutyairi.

ON Semiconductor SO-8 Flat Lead Package

PANE Semiconductor WDFN8 package

4. NXP LFPAK uye QLPAK kurongedza

NXP (yaimbova Philps) yakavandudza SO-8 yekurongedza tekinoroji muLFPAK neQLPAK. Pakati pavo, LFPAK inoonekwa seyakanyanya kuvimbika simba SO-8 package munyika; nepo QLPAK iine maitiro ehukuru hudiki uye yakakwirira kupisa kupisa kwekuita. Kuenzaniswa neyakajairwa SO-8, QLPAK inogara PCB board nzvimbo ye6 * 5mm uye ine inodzivirira kupisa kwe1.5k/W.

NXP LFPAK package

NXP QLPAK kurongedza

4. ST Semiconductor PowerSO-8 package

STMicroelectronics 'simba MOSFET chip packaging technologies inosanganisira SO-8, PowerSO-8, PowerFLAT, DirectFET, PolarPAK, etc. Pakati pavo, Power SO-8 ishanduro yakavandudzwa yeSO-8. Mukuwedzera, kune PowerSO-10, PowerSO-20, TO-220FP, H2PAK-2 uye mamwe mapakeji.

STMicroelectronics Power SO-8 package

5. Fairchild Semiconductor Power 56 package

Power 56 ndiro zita raFarichild chete, uye zita rayo repamutemo ndiDFN5×6. Nzvimbo yayo yekurongedza inofananidzwa neiyo inowanzo shandiswa TSOP-8, uye iyo yakatetepa pasuru inochengetedza chikamu chekureba, uye iyo Thermal-Pad dhizaini pazasi inoderedza kupisa kwekupisa. Naizvozvo, vazhinji vanogadzira zvigadzirwa zvemagetsi vakaisa DFN5 × 6.

Fairchild Power 56 package

6. International Rectifier (IR) Yakananga FET package

Direct FET inopa kutonhora kwepamusoro kunoshanda muSO-8 kana diki tsoka uye inokodzera AC-DC neDC-DC yekushandura magetsi mashandisirwo mumakomputa, malaptop, nharembozha uye zvemagetsi zvevatengi. DirectFET's simbi inogona kuvaka inopa kaviri-mativi kupisa kupisa, zvinonyatsopeta kaviri ikozvino kubata masimba epamusoro-frequency DC-DC buck converters zvichienzaniswa neyakajairwa epurasitiki discrete mapakeji. Iyo Direct FET package imhando yakadzoserwa kumashure, ine dhiraivha (D) yekupisa sink yakatarisa kumusoro uye yakavharwa negoko resimbi, kuburikidza nekupisa kunobviswa. Yakananga FET kurongedza inonatsiridza zvakanyanya kupisa kupisa uye inotora nzvimbo shoma ine yakanaka kupisa kupisa.

Pfupisa

Mune ramangwana, sezvo indasitiri yekugadzira zvemagetsi ichiramba ichikura munzira ye Ultra-yakaonda, miniaturization, yakaderera voltage, uye yakakwira ikozvino, chitarisiko uye chemukati chekurongedza chimiro cheMOSFET chichachinjawo kuti chigadzirise zvirinani kune zvinodiwa zvekusimudzira zvekugadzira. industry. Pamusoro pezvo, kuitira kudzikisira chikumbaridzo chevagadziri vemagetsi, maitiro eMOSFET kusimudzira munzira yemodularization uye system-level packaging ichawedzera kuoneka, uye zvigadzirwa zvichakura nenzira yakarongeka kubva kune akawanda mativi sekuita uye mutengo. . Package ndechimwe chezvakakosha mareferensi zvinhu zvekusarudzwa kweMOSFET. Zvigadzirwa zvemagetsi zvakasiyana zvine zvinodiwa zvemagetsi zvakasiyana, uye nzvimbo dzakasiyana dzekuisa dzinodawo kuenzanisa saizi yekusangana. Mukusarudza chaiko, sarudzo inofanira kuitwa maererano nezvinodiwa chaizvo pasi pemutemo mukuru. Mamwe masisitimu emagetsi anoganhurwa nehukuru hwePCB uye urefu hwemukati. Semuenzaniso, magetsi emagetsi emagetsi ekutaurirana anowanzo shandisa DFN5 * 6 uye DFN3 * 3 mapakeji nekuda kwezvirambidzo zvehurefu; mune mamwe masimba emagetsi eACDC, madhizaini ekupedzisira-mutete kana nekuda kwekumisikidzwa kwegoko akakodzera kuunganidza TO220 yakarongedzwa simba MOSFETs. Panguva ino, mapini anogona kuiswa zvakananga mumudzi, iyo isingakodzeri TO247 yakarongedzwa zvigadzirwa; mamwe madhizaini ekupedzisira-mutete anoda kuti mapini emudziyo akotame uye agadzirwe, izvo zvinowedzera kuoma kwekusarudzwa kweMOSFET.

Nzira yekusarudza MOSFET

Mumwe mainjiniya akambondiudza kuti haana kumbobvira atarisa peji rekutanga reMOSFET data sheet nekuti iyo "inoshanda" ruzivo rwakangoonekwa pane yechipiri peji uye mberi. Rinenge peji rega rega paMOSFET data sheet rine ruzivo rwakakosha kune vanogadzira. Asi hazviwanzo kujeka nzira yekududzira iyo data inopihwa nevagadziri.

Ichi chinyorwa chinodonongodza mamwe akakosha maidi eMOSFETs, mataurirwo aanoitwa padhetabheti, uye mufananidzo wakajeka waunoda kuti uzvinzwisise. Kufanana nemidziyo yakawanda yemagetsi, MOSFETs inobatwa nekushanda tembiricha. Saka zvakakosha kuti unzwisise mamiriro ekuedzwa ayo zviratidzo zvataurwa zvinoshandiswa. Izvo zvakakoshawo kuti unzwisise kana zviratidzo zvaunoona mu "Product Introduction" zviri "maximum" kana "typical" values, nekuti mamwe mapepa edata haajekese.

Voltage giredhi

Hunhu hwekutanga hunotaridza MOSFET idrain-source voltage VDS, kana "drain-source breakdown voltage", inova ndiyo voltage yepamusoro iyo MOSFET inogona kumira nayo pasina kukuvadzwa kana gedhi rikapfupika-kutenderera kune kwakabva uye dhiraivha iripo. iri 250μA. . VDS inonziwo "absolute maximum voltage pa 25 ° C", asi zvakakosha kuyeuka kuti iyi mhedziso yemagetsi inoenderana nekushisa, uye kazhinji pane "VDS tembiricha coefficient" mune data sheet. Iwe zvakare unofanirwa kunzwisisa kuti yakanyanya VDS ndiyo DC voltage pamwe nechero voltage spikes uye ripples angave aripo mudunhu. Semuyenzaniso, kana ukashandisa 30V mudziyo pane 30V magetsi ane 100mV, 5ns spike, voltage inodarika mhedziso yepamusoro yemuganho uye mudziyo unogona kupinda muavalanche mode. Muchiitiko ichi, kuvimbika kweMOSFET hakugone kuvimbiswa. Pakupisa kwakanyanya, iyo tembiricha coefficient inogona kuchinja zvakanyanya kuparara kwemagetsi. Semuenzaniso, mamwe maN-channel MOSFET ane voltage rating ye600V ane yakanaka tembiricha coefficient. Pavanosvika pakupisa kwavo kwepamusoro pejoni, tembiricha coefficient inoita kuti maMOSFET aya aite se650V MOSFETs. Mitemo yekugadzira yakawanda yevashandisi veMOSFET inoda chinodzikisira chegumi muzana kusvika makumi maviri muzana. Mune mamwe magadzirirwo, tichifunga kuti iyo chaiyo yekuputsika voltage ndeye 5% kusvika 10% yakakwirira kupfuura iyo yakatemerwa kukosha pa25 ° C, inopindirana inobatsira dhizaini margin ichawedzerwa kune chaiyo dhizaini, iyo inobatsira zvikuru dhizaini. Zvakakosha zvakaenzana pakusarudzwa kweMOSFET ndiko kunzwisisa basa regedhi-source voltage VGS panguva yekuita. Iyi voltage ndiyo voltage inovimbisa kuzara kweMOSFET pasi peiyo yakanyanya kupihwa RDS (pa) mamiriro. Ichi ndicho chikonzero iyo-kupikisa inogara ichienderana neiyo VGS level, uye ingori pane iyi voltage iyo mudziyo unogona kuvhurwa. Yakakosha dhizaini mhedzisiro ndeyekuti haugone kutenderedza MOSFET zvizere nevoltage yakaderera pane iyo shoma VGS inoshandiswa kuwana iyo RDS (pa) chiyero. Semuenzaniso, kutyaira MOSFET zvizere ne3.3V microcontroller, unofanirwa kukwanisa kubatidza MOSFET paVGS=2.5V kana kudzika.

On-resistance, gedhi charge, uye "figure of merit"

Iko-kupokana kweMOSFET inogara yakatemwa pane imwe kana anopfuura gedhi-kune-sosi voltages. Iyo yakanyanya RDS (pa) muganho inogona kuva 20% kusvika 50% yakakwira pane yakajairika kukosha. Muganho mukuru we RDS(on) kazhinji unoreva kukosha pajonction tembiricha ye25°C. Pakupisa kwepamusoro, RDS(on) inogona kuwedzera ne30% kusvika 150%, sezvaratidzwa mumufananidzo 1. Sezvo RDS(on) ichichinja netembiricha uye kushomeka kwekupokana hakugone kuvimbiswa, kuona ikozvino kwakavakirwa paRSS(on) hakusi. nzira yakarurama kwazvo.

RDS(on) inowedzera netembiricha muchikamu che30% kusvika 150% yetembiricha yepamusoro yekushanda

Mufananidzo 1 RDS (pa) inowedzera nekushisa muhuwandu hwe30% kusvika 150% yehukuru hwekushisa kwekushanda.

On-resistance kwakakosha kune ese N-channel uye P-channel MOSFETs. Mukuchinja magetsi, Qg ndiyo kiyi yekusarudza yeN-channel MOSFET inoshandiswa mukuchinja magetsi nekuti Qg inokanganisa kuchinja kwekurasikirwa. Kurasikirwa uku kune maitiro maviri: imwe inguva yekuchinja inobata MOSFET nekudzima; imwe isimba rinodiwa kubhadharisa gedhi capacitance panguva yega yega switching process. Chinhu chimwe chekuchengeta mupfungwa ndechekuti Qg inoenderana negedhi-sosi voltage, kunyangwe kushandisa yakaderera Vgs kunoderedza kushandura kurasikirwa. Senzira yekukurumidza yekuenzanisa maMOSFET akagadzirirwa kushandiswa mukuchinja maapplication, vagadziri vanowanzo shandisa imwe fomula ine RDS(on) yekurasikirwa kwekuitisa uye Qg yekuchinja kurasikirwa: RDS(on)xQg. Iyi "nhamba yekukodzera" (FOM) inopfupisa mashandiro emudziyo uye inobvumira MOSFETs kuenzaniswa maererano neyakajairwa kana yakanyanya kukosha. Kuti uve nechokwadi chekuenzanisa kwakaringana pamidziyo yese, unofanirwa kuve nechokwadi chekuti VGS imwe chete inoshandiswa kuRSS(pa) neQg, uye kuti zvakajairwa uye zvakakosha hazviitike kuti zvisanganiswe mukuburitswa. Yakaderera FOM inokupa kuita zvirinani mukuchinja maapplication, asi haina kuvimbiswa. Mhedzisiro yakanakisa yekuenzanisa inogona kuwanikwa chete mudunhu chairo, uye mune dzimwe nguva dunhu rinogona kuda kugadziridzwa zvakanaka kune yega yega MOSFET. Yakatemerwa ikozvino uye simba kupera, zvichibva pane akasiyana bvunzo mamiriro, mazhinji maMOSFET ane imwe kana anopfuura anoenderera emvura emvura mune data sheet. Iwe unozoda kutarisa pabepa redata zvakanyatsonaka kuti uone kana kuyerwa kuri patembiricha yataurwa (semuenzaniso TC=25°C), kana tembiricha yepakati (eg TA=25°C). Ndeupi weaya maitiro anonyanya kukosha zvinoenderana nehunhu hwechishandiso uye mashandisiro (ona Mufananidzo 2).

Yese yakakwana yakanyanya ikozvino uye simba kukosha ndeye data chaiyo

Mufananidzo 2 Yese yakakwana yakakura ikozvino uye simba kukosha ndeye data chaiyo

Kune zvidiki zvidiki zvekukwira pamusoro pezvishandiso zvinoshandiswa mumidziyo inobatwa nemaoko, iyo inonyanya kukosha yazvino nhanho inogona kunge iri pane ambient tembiricha ye70 ° C. Kumidziyo mikuru ine masingi ekupisa uye kutonhodzwa kwemhepo, nhanho iripo paTA = 25 ℃ inogona kunge iri padyo nemamiriro chaiwo. Kune mamwe maturusi, iyo inofa inogona kubata yazvino pane yayo yakanyanya tembiricha yejoni pane iyo pasuru inogumira. Mune mamwe mapepa edatha, iyi "die-limited" nhanho yazvino ruzivo rwekuwedzera kune "pakeji-yakaganhurirwa" nhanho yazvino, iyo inogona kukupa iwe pfungwa yekusimba kwekufa. Kufunga kwakafanana kunoshanda kune inoenderera simba kupera, izvo zvinoenderana kwete chete nekushisa asiwo nenguva. Fungidzira mudziyo uchishanda uchienderera paPD=4W kwemasekonzi gumi paTA=70℃. Chii chinoumba "inoenderera" nguva ichasiyana zvichienderana neMOSFET package, saka iwe uchazoda kushandisa yakajairwa yekupisa yenguva pfupi impedance plot kubva kudhetabheti kuti uone kuti kubviswa kwemagetsi kunotaridzika sei mushure memasekondi gumi, zana, kana maminetsi gumi. . Sezvinoratidzwa muFigure 3, iyo yekupisa yekudzivirira inokwana yeiyi yakakosha mudziyo mushure megumi-yechipiri pulse inosvika 0.33, zvinoreva kuti kana pasuru yasvika pakupisa kwekupisa mushure memaminitsi angangoita gumi, kupisa kwechishandiso kunongova 1.33W pachinzvimbo che4W. . Kunyangwe kupisa kwekupisa kwechigadzirwa kunogona kusvika kune 2W pasi pekutonhora kwakanaka.

Kupisa kwekupisa kweMOSFET kana simba rekupuruzira raiswa

Mufananidzo 3 Thermal kuramba yeMOSFET kana simba pulse raiswa

Muchokwadi, isu tinogona kupatsanura nzira yekusarudza MOSFET kuita matanho mana.

Danho rekutanga: sarudza N chiteshi kana P chiteshi

Danho rekutanga pakusarudza mudziyo wakakodzera dhizaini yako kusarudza kushandisa N-channel kana P-channel MOSFET. Mune yakajairwa simba rekushandisa, kana MOSFET yakabatana pasi uye mutoro wakabatana kune mains voltage, iyo MOSFET inoumba yakaderera-side switch. Mune yakaderera-side switch, N-channel MOSFETs inofanirwa kushandiswa nekuda kwekufunga nezve voltage inodiwa kudzima mudziyo kana kubatidza. Kana iyo MOSFET yakabatana nebhazi uye kurodha pasi, yakakwira-side switch inoshandiswa. P-channel MOSFETs anowanzo shandiswa mune iyi topology, iyo zvakare inokonzerwa nevoltage drive kufunga. Kuti usarudze chishandiso chakakodzera chekushandisa kwako, unofanirwa kuona voltage inodiwa kutyaira mudziyo uye nzira iri nyore yekuzviita mudhizaini yako. Nhanho inotevera ndeyekuona iyo inodiwa voltage rating, kana iyo yakanyanya voltage iyo mudziyo unogona kumira. Iyo yakakwirira yevoltage rating, inokwira mutengo wemudziyo. Zvinoenderana nechiitiko chinoshanda, iyo yakayerwa voltage inofanirwa kunge yakakura kupfuura mains voltage kana bhazi voltage. Izvi zvinopa dziviriro yakakwana kuitira kuti MOSFET isakundikane. Paunenge uchisarudza MOSFET, zvinodikanwa kuti uone iyo yakakwira voltage inogona kubvumidzwa kubva pakudonhedza kune sosi, ndiko kuti, iyo yakanyanya VDS. Izvo zvakakosha kuti uzive kuti iyo yakanyanya voltage iyo MOSFET inogona kumira shanduko nekupisa. Vagadziri vanofanirwa kuyedza kusiyanisa kwemagetsi pamusoro pese tembiricha yekushanda. Iyo yakayerwa voltage inofanirwa kunge iine muganho wakakwana kuvhara iyi mutsauko kuti ive nechokwadi chekuti dunhu harikundikane. Zvimwe zvekuchengetedza izvo zvinofanirwa kutariswa nemainjiniya ekugadzira zvinosanganisira voltage transients inokonzereswa nekuchinja magetsi senge motor kana transformer. Rated voltages anosiyana kune akasiyana maapplication; kazhinji, 20V yemidziyo inotakurika, 20-30V yeFPGA magetsi ekushandisa, uye 450-600V ye85-220VAC maapplication.

Danho 2: Sarudza yakayerwa ikozvino

Danho rechipiri nderekusarudza chiyero chazvino cheMOSFET. Zvichienderana nekugadziriswa kwedunhu, iyi yakatarwa ikozvino inofanira kunge iri iyo yakawanda ikozvino iyo mutoro unogona kumira pasi pemamiriro ose. Zvakafanana nemamiriro emagetsi, mugadziri anofanirwa kuve nechokwadi chekuti MOSFET yakasarudzwa inokwanisa kumira nechiyero chazvino, kunyangwe sisitimu ichigadzira maspikes aripo. Iwo maviri azvino mamiriro akatariswa anoenderera modhi uye pulse spike. Mukuenderera mberi kwekuita modhi, iyo MOSFET iri munzvimbo yakatsiga, uko ikozvino inoyerera ichienderera kuburikidza nemudziyo. Pulse spike inoreva kuvhiya kukuru (kana spike ikozvino) kuyerera nemumudziyo. Kana iyo yakanyanya ikozvino pasi pemamiriro ezvinhu aya yakatemwa, ingori nyaya yekusarudza mudziyo unokwanisa kubata iyi yakanyanya ikozvino. Mushure mekusarudza ikozvino yakarongwa, kurasikirwa kwekufambisa kunofanirawo kuverengwa. Mumamiriro ezvinhu chaiwo, MOSFET haisi mudziyo wakakodzera nekuti pane kupera kwesimba remagetsi panguva yekuitisa, inonzi conduction kurasikirwa. A MOSFET inoita senge inochinjika resistor kana "pa", iyo inotemerwa neiyo RDS (ON) yechishandiso uye inochinja zvakanyanya nekushisa. Iko kurasikirwa kwesimba kwechishandiso kunogona kuverengerwa neIload2 × RDS (ON). Sezvo iyo-inopikisa ichichinja nekushisa, kurasikirwa kwemagetsi kuchachinjawo zvakaenzana. Iyo yakakwirira iyo VGS yakashandiswa kune MOSFET, iyo idiki iyo RDS (ON) ichave; ukuwo, iyo yakakwirira iyo RDS(ON) ichave. Kune mugadziri wesystem, apa ndipo panouya kutengeserana-offs zvichienderana neiyo system voltage. Kune madhizaini anotakurika, zviri nyore (uye zvakajairika) kushandisa yakaderera voltages, nepo kune maindasitiri madhizaini, yakakwirira voltages inogona kushandiswa. Ziva kuti iyo RDS(ON) kuramba ichakwira zvishoma neyazvino. Kusiyana kwakasiyana-siyana kwemagetsi ma parameter eiyo RDS (ON) resistor inogona kuwanikwa mune tekinoroji data sheet rakapihwa nemugadziri. Tekinoroji ine simba rakakura pamaitiro emudziyo, nekuti mamwe matekinoroji anowanzo kuwedzera RDS (ON) kana ichiwedzera iyo yakanyanya VDS. Kune tekinoroji yakadai, kana iwe uchifunga kudzikisa VDS uye RDS (ON), unofanirwa kuwedzera saizi yechip, nekudaro uchiwedzera saizi yepakiti inofananidzwa uye nemitengo yekusimudzira. Kune akati wandei matekinoroji muindasitiri ari kuyedza kudzora kuwedzera kwehukuru hwechip, iyo inonyanya kukosha iyo chiteshi uye tekinoroji yekuenzanisa tekinoroji. Mune tekinoroji tekinoroji, gomba rakadzika rakanyudzwa muwaferi, rinowanzochengeterwa yakaderera voltages, kudzikisa iyo-inopikisa RDS (ON). Kuti uderedze kukanganiswa kweiyo VDS yakawanda paRSS(ON), epitaxial kukura column/etching column process yakashandiswa panguva yebudiriro. Semuenzaniso, Fairchild Semiconductor yakagadzira tekinoroji inodaidzwa kuti SuperFET iyo inowedzera mamwe matanho ekugadzira ekuderedza RDS(ON). Uku kutarisisa kweRSS(ON) kwakakosha nekuti sezvo kuparara kwemagetsi eiyo MOSFET yakajairika, RDS(ON) inowedzera zvakanyanya uye inotungamira mukuwedzera kwekukura kwekufa. Iyo SuperFET maitiro inoshandura hukama hweexponential pakati peRSS (ON) uye saizi yewafer kuita hukama hwemutsara. Nenzira iyi, SuperFET michina inogona kuwana yakaderera yakaderera RDS (ON) mumadiki ekufa, kunyangwe nekuparara kwemagetsi anosvika ku600V. Mhedzisiro yacho ndeyekuti saizi yewafer inogona kudzikiswa kusvika ku35%. Kune vashandisi vekupedzisira, izvi zvinoreva kudzikiswa kwakanyanya muhukuru hwepakeji.

Danho rechitatu: Sarudza Zvinodiwa zveThermal

Nhanho inotevera pakusarudza MOSFET ndeyekuverenga izvo zvinodikanwa zvekupisa zvehurongwa. Vagadziri vanofanirwa kufunga nezvezviitiko zviviri zvakasiyana, iyo yakaipisisa mamiriro uye chaiyo-yepasirese mamiriro. Inokurudzirwa kushandisa yakaipisisa-yekuverengera mhedzisiro, nekuti iyi mhedzisiro inopa yakakura chengetedzo margin uye inovimbisa kuti iyo system haizokundike. Kune zvakare imwe data yekuyera inoda kutariswa pane MOSFET data sheet; senge thermal kuramba pakati pe semiconductor junction yeyakaputirwa mudziyo uye nharaunda, uye yakanyanya tembiricha yekusangana. Tembiricha yekusangana kwechishandiso yakaenzana neyakakura ambient tembiricha pamwe neyakagadzirwa kupisa kwekupisa uye kupera simba (junction tembiricha = yakanyanya ambient tembiricha + [thermal resistance × power dissipation]). Zvinoenderana neiyo equation, iyo yakanyanya simba dissipation yehurongwa inogona kugadziriswa, iyo yakaenzana neI2 × RDS (ON) netsanangudzo. Sezvo mugadziri akatara yazvino iyo inodarika nemuchina, RDS (ON) inogona kuverengerwa patembiricha dzakasiyana. Zvakakosha kuziva kuti kana uchibata nemhando dzakareruka dzekupisa, vagadziri vanofanirawo kufunga nezvekupisa kwesimba re semiconductor junction / device kesi uye nyaya / nharaunda; izvi zvinoda kuti bhodhi rakadhindwa redunhu uye pasuru hazvidzise nekukurumidza. Avalanche breakdown inoreva kuti reverse voltage pane semiconductor mudziyo inodarika kukosha kwepamusoro uye inoumba munda wakasimba wemagetsi kuti uwedzere ikozvino mumudziyo. Iyi yazvino ichabvisa simba, kuwedzera tembiricha yemudziyo, uye pamwe kukuvadza mudziyo. Makambani eSemiconductor achaita bvunzo dzeavalanche pamidziyo, kuverenga yavo avalanche voltage, kana kuyedza kusimba kwechishandiso. Pane nzira mbiri dzekuverenga rated avalanche voltage; imwe inzira yenhamba uye imwe yacho ndeyekupisa kwekushisa. Thermal calculation inoshandiswa zvakanyanya nekuti inoshanda zvakanyanya. Makambani mazhinji akapa ruzivo rweyedzo yemidziyo yavo. Semuenzaniso, Fairchild Semiconductor inopa "Simba MOSFET Avalanche Guidelines" (Simba MOSFET Avalanche Guidelines-inogona kutorwa kubva kuFairchild webhusaiti). Pamusoro pekombuta, tekinoroji zvakare ine simba rakakura pane iyo avalanche athari. Semuenzaniso, kuwedzera kwehukuru hwekufa kunowedzera avalanche kuramba uye pakupedzisira inowedzera kusimba kwechishandiso. Kune vashandisi vekupedzisira, izvi zvinoreva kushandisa mapakeji akakura muhurongwa.

Danho 4: Sarudza kushandura kushanda

Nhanho yekupedzisira pakusarudza MOSFET ndeyekuona machinjiro ekuita kweMOSFET. Kune akawanda ma paramita anokanganisa kushandura mashandiro, asi akanyanya kukosha igedhi / dhiraini, gedhi / sosi uye dhiraivha / sosi capacitance. Aya ma capacitor anogadzira kurasikirwa kwekuchinja mumudziyo nekuti anobhadhariswa pese paanochinja. Iyo yekumhanyisa yekumhanyisa yeMOSFET saka yakaderedzwa, uye kugona kwechishandiso kunodzikiswa zvakare. Kuti uverenge kurasikirwa kwakazara mumudziyo panguva yekuchinja, mugadziri anofanira kuverenga kurasikirwa panguva yekutendeuka (Eon) uye kurasikirwa panguva yekudzima (Eoff). Simba rese reiyo MOSFET switch rinogona kuratidzwa neinotevera equation: Psw=(Eon+Eoff)×switching frequency. Iyo gedhi yekuchaja (Qgd) ine yakanyanya kukanganisa pakuchinja kuita. Zvichienderana nekukosha kwekuchinja kwekuita, matekinoroji matsva anogara achigadzirwa kugadzirisa dambudziko iri rekuchinja. Kuwedzera chip size kunowedzera gedhi kubhadharisa; izvi zvinowedzera saizi yemuchina. Kuti udzikise kurasikirwa kwekuchinja, matekinoroji matsva akadai sechiteshi gobvu rezasi oxidation abuda, achivavarira kudzikisa kubhadharisa gedhi. Semuenzaniso, tekinoroji nyowani SuperFET inogona kuderedza kurasikirwa kwekuita uye kugadzirisa kushandura mashandiro nekudzikisa RDS(ON) uye gedhi kubhadharisa (Qg). Nenzira iyi, maMOSFET anogona kurarama ne-high-speed voltage transients (dv/dt) uye anochinja-chinja (di/dt) panguva yekuchinja, uye anogona kutoshanda akavimbika pane yakakwirira switching frequencies.