Kushanda musimboti weN-channel yekusimudzira modhi MOSFET

(1) Iyo yekudzora maitiro evGS pane ID uye chiteshi

① Nyaya yevGS=0

Zvinogona kuoneka kuti kune maviri ekudzokera-kumashure-kumashure PN majenji pakati pekudonhedza d uye sosi s yekusimudzira-modhi.MOSFET.

Kana gedhi-source voltage vGS = 0, kunyangwe iyo drain-source voltage vDS yawedzerwa, uye zvisinei neiyo polarity yevDS, panogara paine PN junction mune reverse biased state.Iko hakuna conductive chiteshi pakati pekudonhedza uye kunobva, saka iyo yekudonhedza ikozvino ID≈0 panguva ino.

② Nyaya yevGS> 0

Kana vGS> 0, munda wemagetsi unogadzirwa muSiO2 insulating layer pakati pegedhi ne substrate.Nhungamiro yemunda wemagetsi inotenderera kumunda wemagetsi unotungamirirwa kubva pasuwo kusvika kune substrate pane semiconductor pamusoro.Iyi nzvimbo yemagetsi inodzinga maburi uye inokwezva maerekitironi.Makomba ekudzinga: Maburi ari muP-type substrate ari pedyo negedhi anodzingwa, achisiya asingabvisiki anobvuma maion (negative ions) kuti aite depletion layer.Kukwezva maerekitironi: Maerekitironi (vatakuri vashoma) ari muP-type substrate anokwezvwa nepamusoro pe substrate.

(2) Kuumbwa kweconductive channel:

Kana kukosha kwevGS kuri kudiki uye kugona kukwezva maerekitironi kusina kusimba, hapasati pasisina mugero wekuitisa pakati pemugero nekwakabva.Sezvo vGS ichiwedzera, maerekitironi akawanda anokwezvwa nepamusoro pechikamu cheP substrate.Kana vGS yasvika pane imwe kukosha, maerekitironi aya anoumba N-mhando yakatetepa layer pamusoro peP substrate pedyo negedhi uye akabatana nematunhu maviri eN+, achigadzira N-mhando conductive chiteshi pakati pemvura nekwakabva.Iro conductivity mhando yakatarisana neiyo yeP substrate, saka inonziwo inversion layer.Iyo vGS yakakura ndeye, iyo simba remagetsi rinoshanda pane semiconductor pamusoro iri, maerekitironi akawanda anokwezvwa pamusoro peP substrate, iyo yakakora iyo conductive chiteshi, uye idiki kushongedzwa kwegwara.Iyo gedhi-source voltage kana chiteshi chinotanga kuumbwa chinonzi turn-on voltage, inomiririrwa neVT.