Iyi ipakitiMOSFETpyroelectric infrared sensor. Rectangular frame ndiyo hwindo rinonzwa. Iyo G pini ndiyo yepasi terminal, iyo D pini ndiyo yemukati MOSFET drain, uye S pini ndiyo yemukati MOSFET sosi. Mudunhu, G yakabatana nepasi, D yakabatana kune yakanaka magetsi emagetsi, infrared masaini anoiswa kubva pahwindo, uye masaini emagetsi anobuda kubva kuS.
Gedhi rekutonga G
Mutyairi weMOS anonyanya kuita basa rekugadzira waveform uye kutyaira kusimudzira: Kana iyo G inoratidzira waveform yeMOSFEThaina kukwira zvakakwana, inokonzeresa huwandu hukuru hwekurasikirwa kwesimba panguva yekuchinja nhanho. Mhedzisiro yaro yekuderedza kutendeuka kwedunhu. Iyo MOSFET ichave nefivha yakanyanya uye inokuvadzwa nyore nekupisa. Pane imwe capacitance pakati peMOSFETGS. , kana iyo G chiratidzo chekutyaira chisina kukwana, ichakanganisa zvakanyanya waveform yekusvetuka nguva.
Short-circuit iyo GS pole, sarudza R × 1 chiyero che multimeter, batanidza dema bvunzo inotungamira kune S pole, uye mutsvuku bvunzo inotungamira kuD danda. Kupokana kunofanirwa kunge kuri mashoma Ω kusvika anopfuura gumi Ω. Kana zvikaonekwa kuti kushorwa kweimwe pini uye mapini ayo maviri haaperi, uye ichiri kusingaperi mushure mekuchinjana bvunzo inotungamira, inosimbiswa kuti pini iyi ndiyo G pole, nekuti yakavharwa kubva kune mamwe mapini maviri.
Sarudza kunobva S uye dhonza D
Seta iyo multimeter kuR × 1k uye kuyera kuramba pakati pemapini matatu zvichiteerana. Shandisa nzira yekutsinhana bvunzo yekutungamira kuyera kuramba kaviri. Iyo ine yakaderera kupikisa kukosha (kazhinji zviuru zvishoma Ω kusvika kupfuura zviuru gumi Ω) ndiko kuramba kwemberi. Panguva ino, dema bvunzo inotungamira ndiyo S danda uye dzvuku bvunzo lead yakabatana neD pole. Nekuda kwemamiriro ebvunzo akasiyana, iyo yakayerwa RDS(pa) kukosha kwakakwira kupfuura kukosha kwakapihwa mubhuku rekushandisa.
AboutMOSFET
Transistor ine N-mhando chiteshi saka inodaidzwa kuti N-channelMOSFET, kanaNMOS. P-channel MOS (PMOS) FET iripowo, inova PMOSFET inoumbwa neine zvishoma doped N-mhando BACKGATE uye P-mhando sosi uye dhizaini.
Zvisinei neN-mhando kana P-mhando MOSFET, musimboti wayo wekushanda wakafanana. MOSFET inodzora yazvino pakudonhedza kweiyo inobuda terminal nemagetsi anoiswa kugedhi regiyo rekuisa. MOSFET chishandiso chinodzorwa nemagetsi. Iyo inodzora maitiro echigadzirwa kuburikidza nemagetsi anoshandiswa kugedhi. Izvo hazvikonzerese kubhadharisa mhedzisiro inokonzerwa neiyo base ikozvino kana transistor inoshandiswa pakuchinja. Naizvozvo, pakuchinja maapplication,MOSFETsinofanira kushandura nekukurumidza kupfuura transistors.
Iyo FET inowanawo zita rayo kubva pakuti kupinza kwayo (inonzi gedhi) inokanganisa ikozvino kuyerera kuburikidza netransistor nekukandira munda wemagetsi pane insulating layer. Muchokwadi, hapana ikozvino inoyerera kuburikidza neichi insulator, saka iyo GATE ikozvino yeFET chubhu idiki kwazvo.
Iyo yakajairika FET inoshandisa yakatetepa layer yesilicon dioxide seinodzivirira pasi peGATE.
Iyi mhando ye transistor inonzi metal oxide semiconductor (MOS) transistor, kana, metal oxide semiconductor field effect transistor (MOSFET). Nekuti maMOSFET madiki uye ane simba rakawanda, akatsiva bipolar transistors mune akawanda maapplication.
Nguva yekutumira: Nov-10-2023
