Kune marudzi maviri makuru eMOSFET: split junction type uye insulated gedhi mhando. Junction MOSFET (JFET) inodanwa nekuti ine maviri PN junctions, uye insulated gedhiMOSFET(JGFET) inodanwa nekuti gedhi rakavharwa zvachose kubva kune mamwe ma electrode. Parizvino, pakati pegedhi rakavharidzirwa MOSFETs, inonyanya kushandiswa iMOSFET, inonzi MOSFET (metal-oxide-semiconductor MOSFET); uyezve, kune PMOS, NMOS uye VMOS simba MOSFETs, pamwe neachangobva kutangwa πMOS neVMOS mamodule emagetsi, nezvimwe.
Zvinoenderana neakasiyana chiteshi semiconductor zvinhu, junction mhando uye insulating gedhi mhando yakakamurwa kuita chiteshi uye P chiteshi. Kana yakakamurwa zvinoenderana nemaitiro ekuita, MOSFET inogona kukamurwa kuita depletion rudzi uye rudzi rwekusimudzira. Junction MOSFETs ese marudzi ekuderera, uye insulated gedhi MOSFETs ese ari maviri emhando yekudzikisa uye yekusimudzira mhando.
Field effect transistors inogona kukamurwa kuita junction field effect transistors uye MOSFETs. MOSFETs yakakamurwa muzvikamu zvina: N-channel depletion type uye kuwedzera rudzi; P-channel depletion rudzi uye rudzi rwekusimudzira.
Hunhu hweMOSFET
Hunhu hweMOSFET ndiyo yekumaodzanyemba gedhi voltage UG; iyo inodzora kubuda kwayo ikozvino ID. Kuenzaniswa neakajairwa bipolar transistors, MOSFETs ane hunhu hwekupinza kwepamusoro impedance, ruzha rwakadzika, hombe ine simba renji, yakaderera simba rekushandisa, uye nyore kubatanidza.
Kana iyo yakazara kukosha kweiyo negative bias voltage (-UG) ichiwedzera, dhizaini yekuderera inowedzera, chiteshi chinoderera, uye kudhirowa ikozvino ID kunoderera. Kana iyo yakakwana kukosha kweiyo negative bias voltage (-UG) inoderera, depletion layer inoderera, chiteshi chinowedzera, uye kudhirowa ikozvino ID inowedzera. Zvinogona kuoneka kuti iyo yekudonha ikozvino ID inodzorwa negedhi voltage, saka MOSFET mudziyo unodzorwa nevoltage, kureva kuti, shanduko mune inobuda ikozvino inodzorwa neshanduko mumagetsi ekuisa, kuitira kuti uwane kukwidziridzwa uye. zvimwe zvinangwa.
Senge bipolar transistors, kana MOSFET ichishandiswa mumaseketi akadai sekusimudzira, bias voltage inofanirwa kuwedzerwawo kugedhi rayo.
Gedhi remujunction field effect chubhu rinofanira kushandiswa nereverse bias voltage, kureva kuti, gasi regedhi risina kunaka rinofanira kuiswa kuN-channel chubhu uye gomba rakanaka regedhi rinofanira kuiswa kuP-channel chubhu. Yakasimbiswa insulated gedhi MOSFET inofanirwa kuisa kumberi gedhi voltage. Iyo gedhi voltage ye depletion-modhi inodzivirira MOSFET inogona kuve yakanaka, yakaipa, kana "0". Nzira dzekuwedzera bias dzinosanganisira yakagadziriswa bias nzira, iyo yekuzvipa yekusarura nzira, yakananga yekubatanidza nzira, nezvimwe.
MOSFETine akawanda ma parameter, anosanganisira DC parameters, AC parameters uye muganhu paramita, asi mukushandiswa kwakajairika, iwe unongoda kuterera kune anotevera maparamita makuru: saturated drain-source current IDSS pinch-off voltage Up, (junction chubhu uye depletion mode insulated. gedhi chubhu, kana kuvhura Voltage UT (yakasimbiswa insulated gedhi chubhu), transconductance gm, drain-source breakdown voltage BUDS, yakanyanya simba dissipation PDSM uye yakanyanya drain-source ikozvino IDSM.
(1) Saturated drain-source current
Iyo saturated drain-source yazvino IDSS inoreva kudonhedza-sosi ikozvino kana gedhi voltage UGS=0 mujunction kana kupera insulated gedhi MOSFET.
(2)Pinch-off voltage
Iyo pinch-off voltage UP inoreva gedhi remagetsi kana iyo drain-sosi yekubatanidza ichangogurwa mujunction kana depletion-mhando insulated gedhi MOSFET. Sezvinoratidzwa mu4-25 yeUGS-ID curve yeN-channel chubhu, zvinoreva IDSS uye UP zvinogona kuoneka zvakajeka.
(3) Turn-on voltage
Iyo yekutendeuka-on voltage UT inoreva gedhi voltage kana iyo drain-sosi yekubatanidza ichangoitwa mune yakasimbiswa insulated gedhi MOSFET. Mufananidzo 4-27 unoratidza UGS-ID curve yeN-channel chubhu, uye zvinoreva UT zvinogona kunyatsoonekwa.
(4) Transconductance
Transconductance gm inomiririra kugona kwegedhi-source voltage UGS kudzora dhizaini ikozvino ID, ndiko kuti, chiyero cheshanduko mudhiraini ikozvino ID kune shanduko yegedhi-source voltage UGS. 9m yakakosha parameter kuyera iyo amplification kugona kweMOSFET.
(5)Drain-source breakdown voltage
Iyo drain-source breakdown voltage BUDS inoreva iyo yakanyanya kudonhedza-sosi voltage iyo MOSFET inogona kugamuchira kana gedhi-sosi voltage UGS inogara. Iyi ndiyo inomisa paramende, uye magetsi ekushanda akaiswa kuMOSFET anofanira kunge ari pasi peBUDS.
(6)Maximum power dissipation
Iyo yakanyanya simba dissipation PDSM zvakare muganho paramende, iyo inoreva iyo yakanyanya kudhinha-sosi simba dissipation inotenderwa pasina kushatisa kweMOSFET kuita. Kana yashandiswa, simba chairo rekushandisa reMOSFET rinofanira kunge riri shoma pane PDSM uye kusiya imwe margin.
(7)Maximum drain-source current
Iyo yakanyanya kudonhedza-sosi yazvino IDSM ndiyo imwe muganho paramende, iyo inoreva iyo yakanyanya ikozvino inotenderwa kupfuura pakati pekudonhedza uye sosi kana MOSFET iri kushanda zvakajairika. Ikozvino kushanda kweMOSFET hakufanirwe kudarika IDSM.
1. MOSFET inogona kushandiswa kukwidziridza. Sezvo iyo impedance yekuisa yeMOSFET amplifier yakakwira zvakanyanya, iyo coupling capacitor inogona kuve diki uye electrolytic capacitors haifanirwe kushandiswa.
2. Iyo yakakwirira yekupinza impedance yeMOSFET yakanyatsokodzera kune impedance shanduko. Iyo inowanzo shandiswa kune impedance shanduko mune yekuisa nhanho yeakawanda-nhanho amplifiers.
3. MOSFET inogona kushandiswa sechinhu chinosiyana-siyana chinopikisa.
4. MOSFET inogona kushandiswa zviri nyore sechinhu chinogara chiripo.
5. MOSFET inogona kushandiswa semagetsi switch.
MOSFET ine hunhu hwekudzikira kwemukati kuramba, yakakwira inomira voltage, kukurumidza kushandura, uye yakakwira avalanche simba. Iyo yakagadzirirwa ikozvino span ndeye 1A-200A uye voltage span ndeye 30V-1200V. Isu tinokwanisa kugadzirisa ma paramita emagetsi zvinoenderana neminda yekunyorera yemutengi uye zvirongwa zvekushandisa zvekuvandudza mutengi Chigadzirwa kuvimbika, kutendeuka kwese kunyatsoshanda uye kukwikwidza kwemutengo wechigadzirwa.
MOSFET vs Transistor Kuenzanisa
(1) MOSFET chinhu chinodzora magetsi, nepo transistor iri chinhu chazvino chekudzora chinhu. Kana huwandu hushoma hwemazuva ano huchibvumidzwa kutorwa kubva kunobva chiratidzo, MOSFET inofanira kushandiswa; apo chiratidzo chemagetsi chakaderera uye huwandu hukuru hwemazuva ano hunobvumirwa kutorwa kubva kune chiratidzo chechiratidzo, transistor inofanira kushandiswa.
(2) MOSFET inoshandisa vatakuri vazhinji kuitisa magetsi, saka inodaidzwa kuti unipolar mudziyo, nepo ma transistors ane ruzhinji rwevatakuri uye vashoma vanotakura magetsi. Inonzi bipolar device.
(3) Kunobva uye kudonhedza kwemamwe maMOSFET anogona kushandiswa zvakasiyana, uye gedhi remagetsi rinogona kuve rakanaka kana rakashata, iro rinochinjika kupfuura transistors.
(4) MOSFET inogona kushanda pasi pezvishoma zvazvino uye zvakaderera voltage mamiriro, uye maitiro ayo ekugadzira anogona nyore kubatanidza akawanda maMOSFET pane silicon wafer. Naizvozvo, maMOSFET akashandiswa zvakanyanya mumasekete makuru akabatanidzwa.
Maitiro ekutonga kunaka uye polarity yeMOSFET
Sarudza huwandu hweiyo multimeter kuRX1K, batanidza dema bvunzo inotungamira kune D danda, uye tsvuku bvunzo inotungamira kune S pole. Bata G uye D matanda panguva imwe chete neruoko rwako. Iyo MOSFET inofanirwa kunge iri instantaneous conduction state, kureva kuti, mita yetsono inotenderera kuenda panzvimbo ine kushoma kupikisa. , wobva wabata matanda eG neS nemaoko ako, MOSFET haifanire kunge isina mhinduro, kureva kuti tsono yemamita haidzokeri kumashure kune zero. Panguva ino, inofanirwa kutongwa kuti MOSFET ichubhu yakanaka.
Sarudza huwandu hweiyo multimeter kusvika kuRX1K, uye kuyera kuramba pakati pemapini matatu eMOSFET. Kana kushorwa pakati pepini imwe neimwe pini mbiri kusingagumi, uye kuchiri kusingaperi mushure mekuchinjana bvunzo inotungamira, Zvino pini iyi ndiyo G pole, uye mamwe mapini maviri ndiwo S pole uye D pole. Wobva washandisa multimeter kuyera kukosha kwekupokana pakati peS pole neD danda kamwe, chinjana bvunzo inotungamira uye kuyera zvakare. Iyo ine diki yekupikisa kukosha ndeye dema. Iyo bvunzo inotungamira yakabatana neiyo S pole, uye tsvuku bvunzo lead yakabatana neD pole.
MOSFET yekuona uye chenjedzo yekushandisa
1. Shandisa pointer multimeter kuona MOSFET
1) Shandisa nzira yekuyeresa yekudzivirira kuona maelectrodes emujunction MOSFET
Zvinoenderana nechiitiko chekuti kumberi uye kudzosera kupikisa kukosha kwePN junction yeMOSFET kwakasiyana, maelectrodes matatu emujunction MOSFET anogona kuzivikanwa. Yakananga nzira: Seta iyo multimeter kuR × 1k renji, sarudza chero maviri maelectrode, uye kuyera kwavo kumberi uye kudzosera maitiro ekupikisa zvakateerana. Kana maelectrodes maviri akaenzana uye akaenzana uye ari zviuru zve ohm, ipapo maelectrode maviri ndiwo mudonzvo D uye tsime S zvakateerana. Nokuti nokuda kwekusangana kweMOSFETs, mvura uye chitubu zvinoshandurana, iyo yakasara electrode inofanira kunge iri gedhi G. Unogonawo kubata dema rekuedza lead (red test lead inogamuchirwawo) ye multimeter kune chero electrode, uye imwe bvunzo inotungamira bata maelectrode maviri akasara munhevedzano kuyera kukosha kwekupikisa. Kana maitiro ekupikisa akayerwa kaviri anenge akaenzana, electrode inosangana neblack test lead igedhi, uye mamwe maelectrode maviri ndiwo mudonzvo uye sosi zvichiteerana. Kana ukoshi hwekupikisa hwakayerwa kaviri ari maviri akakura kwazvo, zvinoreva kuti ndiyo inodzokera kumashure kweiyo PN junction, kureva kuti, ese ari maviri reverse resistance. Inogona kutariswa kuti iN-channel MOSFET, uye dema bvunzo lead yakabatana negedhi; kana maitiro ekupikisa akayerwa kaviri ari Mamiriro ekupikisa ari maduku zvikuru, zvichiratidza kuti iri mberi PN junction, kureva, kupikisa mberi, uye yakatsunga kuva P-channel MOSFET. Iyo black test lead inobatanidzwawo negedhi. Kana mamiriro ari pamusoro apa asina kuitika, unogona kutsiva dema uye dzvuku bvunzo inotungamira uye kuitisa bvunzo zvinoenderana neiyo nzira iri pamusoro kusvika grid yaonekwa.
2) Shandisa nzira yekuyera yekudzivirira kuona kunaka kweMOSFET
Nzira yekuyera yekupikisa ndeye kushandisa multimeter kuyera kupokana pakati peiyo MOSFET kwanobva uye kudonhedza, gedhi uye sosi, gedhi uye dhizaini, gedhi G1 uye gedhi G2 kuona kana ichienderana kukosha kwekupokana kunoratidzwa mubhuku reMOSFET. Kutungamira kwakanaka kana kwakaipa. Yakananga nzira: Chekutanga, isa iyo multimeter kune iyo R × 10 kana R × 100 renji, uye kuyera kupokana pakati peiyo sosi S uye yekudhanha D, kazhinji muhuwandu hwemakumi emaohm kune akati wandei zviuru ohms (inogona kuoneka mukati. bhuku rekuti machubhu akasiyana-siyana emhando, maitiro avo ekupikisa akasiyana), kana iyo yakayerwa kukosha kweiyo yakakura kupfuura yakajairika kukosha, inogona kunge iri nekuda kwekutadza kubata kwemukati; kana kuyerwa kupikisa kukosha kusingagumi, inogona kunge iri yemukati yakatyoka danda. Wobva waisa iyo multimeter kuR × 10k renji, wobva wayera kukosha kwekupokana pakati pemagedhi G1 uye G2, pakati pegedhi uye sosi, uye pakati pegedhi uye dhiraivha. Kana iyo yakayerwa kupikisa maitiro ese asingagumi, saka Zvinoreva kuti chubhu yakajairika; kana maitiro ekupikisa ari pamusoro ari maduku zvikuru kana pane nzira, zvinoreva kuti tube yakaipa. Zvinofanira kucherechedzwa kuti kana magedhi maviri akaputsika muchubhu, chikamu chinotsiva nzira chinogona kushandiswa pakuona.
3) Shandisa iyo induction chiratidzo chekuisa nzira yekufungidzira kugona kwekukudza kweMOSFET
Yakananga nzira: Shandisa iyo R × 100 nhanho yekuramba multimeter, batanidza iyo dzvuku bvunzo inotungamira kune kunobva S, uye dema bvunzo inotungamira kudhiraini D. Wedzera 1.5V magetsi emagetsi kuMOSFET. Panguva ino, kukosha kwekupikisa pakati pemvura uye chitubu chinoratidzwa nemamita tsono. Wobva wadzvanya gedhi G rejoni MOSFET neruoko rwako, uye wedzera induced voltage chiratidzo chemuviri wemunhu kugedhi. Nenzira iyi, nekuda kweiyo amplification mhedzisiro yechubhu, iyo drain-source voltage VDS uye iyo drain ikozvino Ib ichachinja, ndiko kuti, kushomeka pakati pekudonhedza uye sosi kuchachinja. Kubva pane izvi, zvinogona kuonekwa kuti mita yetsono inoshanduka kusvika pamwero mukuru. Kana tsono yegridi yakabatwa nemaoko ichizununguka zvishoma, zvinoreva kuti kukwidziridza kugona kwechubhu kwakashata; kana tsono ichizununguka zvakanyanya, zvinoreva kuti kukwidziridza kugona kwechubhu kwakakura; kana tsono isingafambi, zvinoreva kuti chubhu yakashata.
Zvinoenderana neiyo nzira iri pamusoro, isu tinoshandisa R×100 chiyero chemultimeter kuyera junction MOSFET 3DJ2F. Tanga wavhura G electrode yechubhu woyera iyo drain-source resistance RDS kuita 600Ω. Mushure mekubata G electrode neruoko rwako, tsono yemamita inotenderera kuruboshwe. Iyo inoratidzwa kuramba RDS ndeye 12kΩ. Kana tsono yemamita ikakura, zvinoreva kuti chubhu yakanaka. , uye ine hukuru hwekukudza.
Pane mapoinzi mashoma ekucherechedza kana uchishandisa nzira iyi: Chekutanga, kana uchiyedza MOSFET uye wakabata gedhi neruoko rwako, iyo multimeter tsono inogona kusvetukira kurudyi (ukoshi hwekupikisa hunodzikira) kana kuruboshwe (ukoshi hwekupikisa hunowedzera) . Izvi zvinokonzerwa nekuti AC voltage inokonzereswa nemuviri wemunhu yakakwira zvakati, uye maMOSFET akasiyana anogona kunge aine mapoinzi ekushanda akasiyana kana akayerwa nerenji yekupikisa (zvichida kushanda munzvimbo ine saturated kana unsaturated zone). Miedzo yakaratidza kuti iyo RDS yemachubhu mazhinji inowedzera. Ndiko kuti, ruoko rwewachi runotenderedza kuruboshwe; iyo RDS yemachubhu mashoma inodzikira, zvichiita kuti ruoko rwewachi rwudzerere kurudyi.
Asi zvisinei negwaro rinotenderedza ruoko rwewachi, chero ruoko rwewachi ruchiwedzera kukura, zvinoreva kuti chubhu ine hukuru hwekukudza. Chechipiri, nzira iyi inoshandawo kuMOSFETs. Asi zvinofanirwa kucherechedzwa kuti kupikisa kweMOSFET kwakakwira, uye iyo inobvumidzwa induced voltage yegedhi G haifanirwe kunge yakakwira zvakanyanya, saka usapinze gedhi zvakananga nemaoko ako. Iwe unofanirwa kushandisa insulated mubato we screwdriver kubata gedhi nesimbi tsvimbo. , kudzivirira kubhadharisa kunokonzerwa nemuviri wemunhu kubva pakuwedzera zvakananga kugedhi, zvichikonzera kuputsika kwegedhi. Chechitatu, mushure mekuyerwa kwega kwega, mapango eGS anofanira kunge ari mapfupi-anotenderera. Izvi zvinodaro nekuti pachava nemari shoma paGS junction capacitor, iyo inovaka VGS voltage. Nekuda kweizvozvo, maoko emamita anogona kusafamba kana achiyera zvakare. Iyo chete nzira yekuburitsa mutero ndeyekupfupi-kutenderera kubhadharisa pakati peGS electrodes.
4) Shandisa nzira yekuyera yekudzivirira kuona maMOSFET asina kunyorwa
Kutanga, shandisa nzira yekuyera kupikisa kuti uwane mapini maviri ane maitiro ekupikisa, iyo inobva S uye dhiraini D. Mapini maviri akasara ndiwo gedhi rekutanga G1 uye rechipiri gedhi G2. Nyora kukosha kwekupokana pakati pekunobva S uye dhirezi D yakayerwa nematanho maviri ebvunzo kutanga. Chinja maitiro ekuyedza uye kuyera zvakare. Nyora pasi kuyerwa kupikisa kukosha. Iyo ine hombe yekupikisa kukosha yakayerwa kaviri ndiyo yeblack test lead. Iyo electrode yakabatana ndiyo inodhonza D; iyo dzvuku bvunzo lead yakabatana kune kunobva S. Mapango eS uye D akaonekwa neiyi nzira anogona zvakare kusimbiswa nekufungidzira kugona kwekukudza kwechubhu. Ndiko kuti, dema bvunzo inotungamira ine yakakura amplification kugona yakabatana neiyo D pole; iyo red test lead yakabatana pasi kune 8-pole. Mhedzisiro yebvunzo dzenzira mbiri idzi dzinofanira kunge dzakafanana. Mushure mekusarudza nzvimbo dzeD drain D uye chitubu S, isa dunhu maererano nenzvimbo dzinoenderana dzeD uye S. Kazhinji, G1 uye G2 ichaenderanawo mukutevedzana. Izvi zvinotarisa nzvimbo dzemasuwo maviri G1 uye G2. Izvi zvinotarisa kurongeka kweiyo D, S, G1, uye G2 pini.
5) Shandisa shanduko mu reverse resistance value kuti uone saizi ye transconductance
Paunenge uchiyera transconductance performance yeVMOSN channel enhancement MOSFET, unogona kushandisa red test lead kuti ubatanidze sosi S uye black test lead to the drain D. Izvi zvakaenzana nekuwedzera reverse voltage pakati pechitubu nedrain. Panguva ino, gedhi rakavhurika redunhu, uye reverse kuramba kukosha kwechubhu haina kugadzikana. Sarudza iyo ohm huwandu hweiyo multimeter kune yakakwirira kuramba renji yeR × 10kΩ. Panguva ino, voltage mumamita yakakwirira. Paunobata grid G neruoko rwako, iwe uchaona kuti reverse kuramba kukosha kwechubhu inoshanduka zvakanyanya. Iyo yakakura shanduko, iyo yakakwirira iyo transconductance kukosha kwechubhu; kana iyo transconductance yechubhu iri pasi pekuedzwa idiki kwazvo, shandisa nzira iyi kuyera Kana, reverse kuramba inochinja zvishoma.
Kungwarira pakushandisa MOSFET
1) Kuti ushandise MOSFET zvakachengeteka, iwo muganho wemhando dzema paramita senge simba rakaraswa rechubhu, iyo yakanyanya drain-source voltage, iyo yakanyanya gedhi-source voltage, uye yakanyanya ikozvino haigone kudarika mudhizaini yedunhu.
2) Paunenge uchishandisa marudzi akasiyana-siyana eMOSFET, anofanirwa kubatanidzwa kudunhu zvakanyatsoenderana nezvinodiwa, uye polarity yeMOSFET bias inofanirwa kucherechedzwa. Semuenzaniso, pane PN junction pakati pegedhi tsime uye kudonhedza kwejenji MOSFET, uye gedhi reN-channel chubhu haigone kuve yakarerekera kune yakarerekera; gedhi reP-channel chubhu haigone kuve yakashata, nezvimwe.
3) Nekuti iyo impedance yekuisa yeMOSFET yakakwira zvakanyanya, mapini anofanirwa kunge ari pfupi-yakatenderedzwa panguva yekufambisa uye kuchengetedza, uye anofanirwa kuvharirwa nesimbi shielding kudzivirira yekunze induced mukana kubva pakuparara kwegedhi. Kunyanya, ndapota cherechedza kuti MOSFET haigone kuiswa mubhokisi repurasitiki. Zvakanakisisa kuichengeta mubhokisi resimbi. Panguva imwecheteyo, teerera kuchengetedza chubhu hunyoro-uchapupu.
4) Kuti udzivise MOSFET gedhi inductive kuparara, ese ebvunzo zviridzwa, mabhenji ebasa, ironing iron, uye maseketi pachawo anofanirwa kuve akanyatso kudzika; paunenge uchitengesa mapini, solder solder kutanga; usati wasangana nedunhu, iyo chubhu Yese inotungamira inopera inofanira kunge ipfupi-inotenderedzwa kune mumwe nemumwe, uye iyo pfupi-inotenderera zvinhu inofanira kubviswa mushure mekunge welding yapera; pakubvisa chubhu kubva muchikamu chechikamu, nzira dzakakodzera dzinofanira kushandiswa kuve nechokwadi chokuti muviri wemunhu wakadzika, sekushandisa mhete yepasi; hongu, kana yakakwira A gasi-inopisa solder iron iri nyore kune welding MOSFETs uye inova nechokwadi chekuchengetedza; iyo chubhu haifanirwe kupinzwa mukati kana kudhonzwa kunze kwedunhu simba risati radzimwa. Aya matanho ekuchengetedza ari pamusoro anofanirwa kutariswa kana uchishandisa MOSFET.
5) Paunenge uchiisa MOSFET, teerera kune yekumisikidza chinzvimbo uye edza kudzivirira kuva padyo nenzvimbo yekudziya; kuitira kudzivirira kudengenyeka kwepombi fittings, zvakakosha kusimbisa ganda rechubhu; kana pini inotungamira yakabhenda, inofanirwa kunge yakakura 5 mm pane saizi yemidzi kuti ive nechokwadi chekuti Dzivisa kupeta mapini uye kukonzera kubuda kwemhepo.
Kune simba MOSFETs, yakanaka kupisa kupisa mamiriro anodiwa. Nekuti simba MOSFETs rinoshandiswa pasi pemamiriro emutoro wepamusoro, masingi ekupisa anokwana anofanirwa kugadzirwa kuti ive nechokwadi chekuti tembiricha haipfuure iyo yakayerwa kukosha kuitira kuti mudziyo ushande wakadzikama uye wakavimbika kwenguva yakareba.
Muchidimbu, kuve nechokwadi chekushandiswa kwakachengeteka kweMOSFET, kune zvinhu zvakawanda zvekuteerera, uye kune zvakare akasiyana matanho ekuchengetedza anofanirwa kutorwa. Ruzhinji rwevashandi vehunyanzvi nehunyanzvi, kunyanya ruzhinji rwevanofarira zvemagetsi, vanofanirwa kuenderera zvichienderana nemamiriro avo chaiwo uye kutora Nzira dzinoshanda dzekushandisa maMOSFET zvakachengeteka uye zvinobudirira.
Nguva yekutumira: Kubvumbi-15-2024
