Metal-Oxide-SemIConductor chimiro chekristaro transistor inowanzozivikanwa seMOSFET, uko maMOSFET akakamurwa kuita P-mhando MOSFETs uye N-mhando MOSFETs. Maseketi akabatanidzwa anoumbwa neMOSFET anonzi zvakare MOSFET akasanganiswa maseketi, uye ane hukama neMOSFET maseketi akabatanidzwa anoumbwa nePMOSFETs uye.NMOSFETs anonzi CMOSFET akasanganiswa maseketi.
MOSFET ine p-type substrate uye mbiri n-inopararira nzvimbo dzine yakakwira yekusimbisa kukosha inonzi n-chiteshi.MOSFET, uye nzira yekufambisa inokonzerwa ne-n-type conductive channel inokonzerwa ne-n-kuparadzira nzira mumigwagwa miviri ye-n-spreading nepamusoro-soro yehutano apo tube inobata. n-channel yakakora MOSFETs ine n-channel inokonzerwa neconductive chiteshi kana yakanaka dhairekitori yakarerekera inosimudzwa zvakanyanya sezvinobvira pagedhi uye chete kana gedhi tsime rekushanda richida simba rekushandisa rinopfuura chikumbaridzo voltage. n-channel depletion MOSFETs ndeaya asina kugadzirira kugedhi voltage (gedhi sosi kushanda kunoda simba rekushanda re zero). Iyo n-chiteshi mwenje inopera MOSFET ndeye n-channel MOSFET umo conductive chiteshi inokonzerwa kana gedhi remagetsi (gedhi sosi yekushandisa inodiwa yekushanda voltage iri zero) isina kugadzirira.
NMOSFET akasanganiswa maseketi iN-channel MOSFET magetsi emagetsi emagetsi, NMOSFET akasanganiswa maseketi, kuramba kwekuisa kwakakwira zvakanyanya, ruzhinji harwufanire kugaya kunyura kwekuyerera kwemagetsi, nekudaro CMOSFET neNMOSFET maseketi akabatanidzwa akabatana pasina kutora mukati. verengera mutoro wekuyerera kwemagetsi.NMOSFET yakasanganiswa maseketi, ruzhinji rwekusarudzwa kweboka rimwe chete rakanaka switching magetsi emagetsi emagetsi emagetsi maseketi Ruzhinji rweNMOSFET akasanganiswa maseketi anoshandisa imwechete yakanaka switching magetsi emagetsi emagetsi emagetsi, uye 9V zvimwe. CMOSFET akasanganiswa maseketi anongoda kushandisa imwechete switching magetsi emagetsi emagetsi dunhu seNMOSFET akasanganiswa maseketi, anogona kubatana neNMOSFET akabatanidzwa maseketi nekukasira. Nekudaro, kubva kuNMOSFET kuenda kuCMOSFET yakabatana nekukasika, nekuti iyo NMOSFET inoburitsa kudhonza-kumusoro kuramba ishoma pane iyo CMOSFET yakabatanidzwa yedunhu keyed kudhonza-up kuramba, saka edza kuisa inogona mutsauko kudhonza-up resistor R, kukosha kweanopikisa R ndiko. kazhinji 2 kusvika 100KΩ.
Kuvakwa kweN-chiteshi kwakakora MOSFETs
Pane P-mhando yesilicon substrate ine yakaderera doping ukoshi, maviri N matunhu ane yakakwira doping ukoshi anogadzirwa, uye maelectrode maviri anodhonzwa kubva mualuminium simbi kuti ashande sedhireni d uye sosi s, zvichiteerana.
Zvino mune semiconductor chikamu chepamusoro masking yakatetepa kwazvo ye silica insulating chubhu, mudhireni - sosi insulating chubhu pakati pemvura uye kunobva imwe aruminiyamu electrode, segedhi g.
Mune substrate zvakare inotungamira kunze electrode B, iyo ine N-chiteshi gobvu MOSFET. MOSFET sosi uye substrate inowanzobatanidzwa pamwe chete, iyo yakawanda yepombi mufekitori yakagara yakabatana nayo, gedhi rayo uye mamwe ma electrode akavharirwa pakati pekasi.
Nguva yekutumira: May-26-2024
