Power MOSFET yakakamurwawo kuita junction type uye insulated gedhi mhando, asi kazhinji inoreva kune insulated gedhi mhando MOSFET (Metal Oxide Semiconductor FET), inonzi simba MOSFET (Simba MOSFET). Junction rudzi simba remunda mhedzisiro transistor inowanzonzi electrostatic induction transistor (Static Induction Transistor - SIT). Iyo inoratidzirwa negedhi remagetsi kudzora kudonhedza ikozvino, dhiraivha yedhiraivha iri nyore, inoda shoma simba rekutyaira, kukurumidza kushandura kumhanya, yakakwira yekushanda frequency, kugadzikana kwekupisa kuri nani pane iyoGTR, asi simba rayo razvino idiki, rakaderera voltage, rinowanzoshanda kusimba risingapfuuri 10kW yemagetsi emagetsi emagetsi.
1. Simba MOSFET chimiro uye nheyo yekushanda
Simba MOSFET mhando: zvinoenderana neiyo conductive chiteshi inogona kukamurwa kuita P-chiteshi uye N-chiteshi. Zvinoenderana negedhi voltage amplitude inogona kukamurwa kuita; depletion type; apo magetsi egedhi ari zero apo iyo drain-source pole pakati pekuvapo kwenzira inoitisa, yakasimbiswa; yeN (P) chiteshi chemagetsi, gedhi regedhi rakakura kupfuura (risingasviki) zero pasati pave nechiteshi chinoitisa, simba reMOSFET rinonyanya kukwidziridzwa N-chiteshi.
1.1 SimbaMOSFETchimiro
Simba MOSFET chimiro chemukati uye zviratidzo zvemagetsi; conduction yayo chete polarity vatakuri (polys) vanobatanidzwa conductive, ari unipolar transistor. Kuitisa masisitimu akafanana neakaderera-simba MOSFET, asi chimiro chine musiyano mukuru, iyo yakaderera-simba MOSFET ndeye yakachinjika conductive mudziyo, simba MOSFET rakawanda reiyo vertical conductive chimiro, inozivikanwawo seVMOSFET (Vertical MOSFET) , iyo inonatsiridza zvakanyanya iyo MOSFET mudziyo voltage uye iripo inomira kugona.
Zvinoenderana nekusiyana kweiyo vertical conductive chimiro, asi zvakare yakakamurwa mukushandiswa kweV-shaped groove kuwana vertical conductivity yeVVMOSFET uye ine vertical conductive yakapetwa kaviri-diffused MOSFET chimiro cheVDMOSFET (Vertical Double-diffused.MOSFET), bepa iri rinonyanya kukurukurwa semuenzaniso weVDMOS zvishandiso.
Simba MOSFETs kune akawanda akabatanidzwa chimiro, akadai seInternational Rectifier (International Rectifier) HEXFET uchishandisa hexagonal unit; Siemens (Siemens) SIPMOSFET vachishandisa square unit; Motorola (Motorola) TMOS inoshandisa rectangular unit ne "Pin" chimiro.
1.2 Simba MOSFET musimboti wekushanda
Kuchekwa-kure: pakati pemadonhwe-source matanda pamwe neakanaka magetsi ekupa, iwo gedhi-sosi mapango pakati pevolti zero. p base region uye N drift region yakaumbwa pakati pePN junction J1 reverse bias, hapana kuyerera kwazvino pakati pemadonhwe emvura.
Conductivity: Iine yakanaka voltage UGS inoshandiswa pakati pegedhi-source terminals, gedhi rakavharirwa, saka hapana gedhi ikozvino inoyerera. Nekudaro, iyo positive voltage yegedhi inosundira kure maburi ari muP-region pazasi paro, uye inokwezva oligons-electrons muP-region kusvika pamusoro peP-region pazasi pegedhi kana UGS yakakura kudarika UT (turn-on voltage kana pachikumbaridzo voltage), kuwanda kwema electrons pamusoro peP-region pasi pegedhi kuchave kwakawanda kudarika kuwanda kwemakomba, zvekuti P-type semiconductor inverted in an N-type uye ive iyo inverted layer, uye inverted layer inoumba N-channel uye inoita iyo PN junction J1 inonyangarika, dhiza uye sosi conductive.
1.3 Hunhu Hunokosha hweMasimba MOSFET
1.3.1 Static Characteristics.
Hukama huri pakati peiyo Drain ikozvino ID uye voltage UGS pakati pegedhi sosi inodaidzwa kuti kutamisa hunhu hweMOSFET, ID yakakura, hukama pakati peID neUGS hunenge mutsara, uye kutsetseka kwecurve kunotsanangurwa seiyo transconductance Gfs. .
Iyo Drain volt-ampere maitiro (zvimiro zvekubuda) zveMOSFET: cutoff dunhu (inoenderana neiyo cutoff nharaunda yeGTR); saturation dunhu (inoenderana nenzvimbo yekusimudzira yeGTR); non-saturation region (inoenderana nesaturation region yeGTR). Iyo simba MOSFET inoshanda munzvimbo yekuchinja, kureva, inochinja ichidzoka nekudzoka pakati pedunhu rakachekwa uye dunhu risiri-saturation. Iyo simba MOSFET ine parasitic diode pakati peiyo drain-source terminals, uye mudziyo unoitisa kana reverse voltage yaiswa pakati peiyo drain-source terminals. Iyo pa-nyika kuramba kwesimba MOSFET ine yakanaka tembiricha coefficient, iyo yakanakira kuenzanisa yazvino kana zvishandiso zvakabatana zvakafanana.
1.3.2 Dynamic Characterization;
bvunzo yayo yedunhu uye switching process waveforms.
The turn-on process; turn-on kunonoka nguva td (on) - nguva yenguva pakati penguva yekumberi uye nguva iyo uGS = UT uye iD inotanga kuoneka; nguva yekusimuka t- nguva iyo UGS inosimuka kubva kuT kuenda kugedhi voltage UGSP apo MOSFET inopinda munzvimbo isina-yakazara; iyo yakatsiga mamiriro kukosha kweID inotarwa neiyo drain supply voltage, UE, uye dhiraini Hukuru hweUGSP hune hukama neiyo yakatsiga mamiriro kukosha kweID. Mushure mekunge UGS yasvika UGSP, inoramba ichikwira pasi pechiito chekukwira kusvika yasvika pakadzikama, asi iD haina kuchinjika. Turn-on time ton-Sum of turn-on delay time and rise time.
Off delay time td(off) -Nguva yenguva iyo iD inotanga kuderera kusvika zero kubva panguva inokwira ichidonha kusvika zero, Cin inoburitswa kuburikidza neRs neRG, uye uGS inowira kuUGSP zvinoenderana neexponential curve.
Kudonha nguva tf- Nguva yenguva kubva apo uGS inoramba ichidonha kubva kuGSP uye iD inodzikira kusvika chiteshi chanyangarika kuGS <UT uye ID yadonha kusvika zero. Turn-off time toff- Huwandu hwenguva yekudzima yekunonoka uye nguva yekudonha.
1.3.3 MOSFET kushandura kumhanya.
MOSFET switching speed uye Cin kuchaja uye kuburitsa kune hukama hukuru, mushandisi haagone kuderedza Cin, asi anogona kuderedza dhiraivha yekufambisa yemukati kuramba maRs kuderedza nguva isingachinji, kukurumidza kukurumidza kushandura, MOSFET inongovimba nepolytronic conductivity, hapana oligotronic yekuchengetedza maitiro, uye nokudaro nzira yekuvhara inokurumidza zvikuru, nguva yekushandura ye10-100ns, iyo inoshandiswa nguva yakawanda inogona kusvika ku100kHz kana kupfuura, ndiyo yakakwirira yemagetsi makuru emagetsi emagetsi.
Zvishandiso zvinodzorwa nemunda zvinoda kunenge kusina kupinza ikozvino pakuzorora. Nekudaro, panguva yekuchinja, iyo yekuisa capacitor inoda kubhadhariswa uye kuburitswa, iyo ichiri kuda imwe huwandu hwesimba rekutyaira. Iyo yakakwirira yekuchinja frequency, iyo yakakura simba rekutyaira rinodiwa.
1.4 Dynamic performance kunatsiridza
Pamusoro pechishandiso chechishandiso chekufunga nezve voltage yemudziyo, yazvino, frequency, asi zvakare inofanirwa hunyanzvi mukushandisa kwekudzivirira chishandiso, kwete kuita kuti mudziyo mukuchinja kwechinguvana mukukuvadzwa. Zvechokwadi thyristor musanganiswa webipolar transistors mbiri, pamwe chete nehombe capacitance nekuda kwenzvimbo huru, saka kugona kwayo kwedv/dt kunonyanya kunetseka. Kune di/dt ine zvakare yakawedzera conduction dunhu dambudziko, saka inoisawo zvipimo zvakakomba.
Nyaya yesimba MOSFET yakasiyana chaizvo. Yayo dv/dt uye di/dt kugona kunowanzo fungirwa maererano nekugona pa nanosecond (panzvimbo pe microsecond). Asi zvisinei neizvi, ine dynamic performance inogumira. Izvi zvinogona kunzwisiswa maererano neiyo yakakosha chimiro chesimba MOSFET.
Chimiro cheMOSFET yesimba uye inowirirana yakaenzana dunhu. Pamusoro peiyo capacitance inenge yese chikamu chechishandiso, inofanirwa kutariswa kuti MOSFET ine diode yakabatana mukufanana. Kubva pane imwe nzvimbo yekuona, kune zvakare parasitic transistor. (Sezvo IGBT inewo parasitic thyristor). Izvi zvinhu zvakakosha mukudzidza kwemaitiro ane simba eMOSFETs.
Chekutanga pane ese intrinsic diode yakasungirirwa kune MOSFET chimiro ine imwe avalanche kugona. Izvi zvinowanzo ratidzwa maererano nekugona kweavalanche imwechete uye kudzokorora kugona kweavalanche. Kana iyo reverse di/dt yakakura, diode inoiswa pasi pekukurumidza kupuruzira spike, iyo ine mukana wekupinda munzvimbo yeavalanche uye inogona kukuvadza mudziyo kana kugona kwayo kwapfuura. Sezvakaita chero PN junction diode, kuongorora maitiro ayo ane simba kwakaoma. Iwo akasiyana zvakanyanya neiyo pfungwa yakapusa yePN junction inoitisa munzira yekumberi uye ichivharira mune reverse direction. Kana iyo yazvino inodonha nekukurumidza, iyo diode inorasikirwa neiyo reverse blocking kugona kwenguva inozivikanwa seye reverse kudzoreredza nguva. panewo nguva yenguva iyo PN junction inotarisirwa kuti iite nekukurumidza uye isingaratidzi kushomeka kwakanyanya. Kana paine jekiseni remberi mu diode mune simba MOSFET, vatakuri vashoma vanoiswa jekiseni vanowedzerawo kuoma kweMOSFET sechinhu chakawanda.
Mamiriro enguva pfupi ane hukama zvakanyanya nemamiriro emutsara, uye chikamu ichi chinofanira kupihwa tarisiro yakakwana mukushandisa. Zvakakosha kuva neruzivo rwakadzama rwechigadzirwa kuitira kuti zvive nyore kunzwisisa uye kuongororwa kwematambudziko anoenderana.
Nguva yekutumira: Kubvumbi-18-2024
