Field Effect Transistor yakapfupikiswa seMOSFET.Kune marudzi maviri makuru: junction field effect tubes uye metal-oxide semiconductor field effect tubes. Iyo MOSFET inozivikanwa zvakare se unipolar transistor ine ruzhinji rwevatakuri vanobatanidzwa mune conductivity. Iwo ari voltage-inodzorwa semiconductor zvishandiso. Nekuda kwekupikiswa kwayo kwepamusoro, ruzha rwakaderera, kuderera kwesimba rekushandisa, uye humwe hunhu, huchiita kuti ive mukwikwidzi akasimba kune bipolar transistors uye simba transistors.
I. Main parameters yeMOSFET
1, DC parameters
Saturation drain current inogona kutsanangurwa seyekudonhedza ikozvino inoenderana kana iyo voltage pakati pegedhi uye sosi yakaenzana ne zero uye voltage pakati pedhiraini uye sosi yakakura kupfuura pinch-off voltage.
Pinch-off voltage UP: Iyo UGS inodiwa kudzikisa ID kusvika padiki ikozvino kana UDS iri chokwadi;
Turn-on voltage UT: UGS inodiwa kuunza ID kune imwe kukosha kana UDS iri chokwadi.
2, AC Parameters
Low-frequency transconductance gm : Inotsanangura kudzora mhedzisiro yegedhi uye sosi voltage pane drain ikozvino.
Inter-pole capacitance: iyo capacitance pakati pema electrode matatu eMOSFET, iyo diki kukosha, zvirinani kuita.
3、Gadzirisa parameters
Drain, source breakdown voltage: kana iyo yekudonha ikozvino ichikwira zvakanyanya, inoburitsa avalanche kuparara kana UDS.
Gedhi rekuputsa magetsi: junction field effect chubhu yakajairwa kushanda, gedhi uye sosi pakati pePN junction mune reverse bias state, yazvino yakakurisa kuburitsa kuparara.
II. Hunhu hweMOSFETs
MOSFET ine basa rekusimudzira uye inogona kugadzira dunhu rakawedzerwa. Kuenzaniswa netriode, ine zvinotevera maitiro.
(1) Iyo MOSFET mudziyo unodzorwa nemagetsi, uye mukana unodzorwa neUGS;
(2) Ikozvino pakuiswa kweMOSFET idiki zvakanyanya, saka kuramba kwayo kwekuisa kwakakwira zvakanyanya;
(3) Kugadzikana kwayo kwekushisa kwakanaka nokuti inoshandisa vatakuri vakawanda kune conductivity;
(4) Iyo voltage amplification coefficient yedunhu rekusimudzira idiki pane iyo yetatu;
(5) Inodzivirira zvakanyanya kumwaranzi.
Chetatu,MOSFET uye transistor kuenzanisa
(1) MOSFET sosi, gedhi, drain uye triode sosi, base, set point pole inoenderana nebasa rakafanana.
(2) MOSFET mudziyo wemagetsi-inodzorwa ikozvino, iyo yekuwedzera coefficient idiki, kugona kwekusimudzira kwakashata; triode ndeyezvino-inodzorwa voltage mudziyo, iyo amplification kugona kwakasimba.
(3) gedhi reMOSFET haritore zvazvino; uye triode basa, hwaro huchatora imwe yazvino. Naizvozvo, iyo MOSFET gedhi rekuisa yekupokana yakakwira kupfuura iyo triode yekupinza yekupokana.
(4) Iyo conductive process yeMOSFET ine kutora chikamu kwepolytron, uye triode ine kubatanidzwa kwemhando mbiri dzevatakuri, polytron uye oligotron, uye kuwanda kwayo kweoligotron kunokanganisa zvakanyanya nekupisa, radiation uye zvimwe zvinhu, saka, MOSFET. ine kugadzikana kwekushisa kuri nani uye kushomeka kwemwaranzi pane transistor. MOSFET inofanirwa kusarudzwa kana mamiriro ekunze achinja zvakanyanya.
(5) Kana MOSFET yakabatana kune sosi simbi uye substrate, tsime uye dhiraivha zvinogona kuchinjana uye maitiro haashanduke zvakanyanya, nepo muunganidzi uye emitter ye transistor achichinjana, hunhu hwakasiyana uye kukosha kwe β. yakaderedzwa.
(6) Iyo ruzha nhamba yeMOSFET idiki.
(7) MOSFET uye triode inogona kuumbwa neakasiyana-siyana amplifier maseketi uye switching maseketi, asi yekutanga inoshandisa shoma simba, yakanyanya kugadzikana yekupisa, kuwanda kwemagetsi ekupa, saka inoshandiswa zvakanyanya muhukuru uye hwekupedzisira-hukuru- scale Integrated circuits.
(8) Iko-kupokana kweiyo triode yakakura, uye kupikisa kweMOSFET kudiki, saka maMOSFET anowanzo shandiswa sema switch ane hunyanzvi hwepamusoro.
Nguva yekutumira: May-16-2024
