Nhanganyaya kumusimboti wekushanda weanowanzo shandiswa epamusoro-simba MOSFETs

Nhasi pane inowanzoshandiswa-simba guruMOSFETkusuma muchidimbu musimboti wayo wekushanda. Ona kuti rinoziva sei basa rayo pacharo.

 

Metal-Oxide-Semiconductor kureva, Metal-Oxide-Semiconductor, chaizvo, zita iri rinotsanangura chimiro cheMOSFET munharaunda yakabatanidzwa, kureva: mune chimwe chimiro che semiconductor device, yakabatanidzwa nesilicon dioxide nesimbi, kuumbwa. yesuwo.

 

Kunobva uye kudonhedza kweMOSFET kunopokana, ese ari maN-mhando nzvimbo dzakaumbwa muP-mhando yekumashure. Muzviitiko zvakawanda, nzvimbo mbiri idzi dzakafanana, kunyange kana migumo miviri yekugadzirisa isingakanganisi kushanda kwechigadzirwa, chigadzirwa chakadaro chinoonekwa sechinofanana.

 

Mutsara: zvinoenderana neiyo chiteshi mhando uye insulated gedhi mhando yeimwe neimwe N-chiteshi uye P-chiteshi maviri; zvinoenderana neiyo conductive modhi: MOSFET yakakamurwa kuita depletion uye kukwidziridzwa, saka MOSFET yakakamurwa kuita N-chiteshi kupera uye kuwedzera; P-chaneli kuderera uye kukwidziridzwa kwezvikamu zvina zvikuru.

MOSFET musimboti wekushanda - maitiro ezvimiro zveMOSFETinoitisa imwe chete polarity carriers (polys) inobatanidzwa mune conductive, inonzi unipolar transistor. Kuitisa michina yakafanana neyepasi-simba MOSFET, asi chimiro chine mutsauko mukuru, yakaderera-simba MOSFET mudziyo wakachinjika conductive, mazhinji esimba MOSFET vertical conductive chimiro, inozivikanwawo seVMOSFET, iyo inovandudza zvakanyanya MOSFET. mudziyo voltage uye ikozvino kutsungirira kugona. Chinhu chikuru ndechekuti pane dhizaini ye silica insulation pakati pegedhi resimbi uye chiteshi, uye nekudaro ine yakakwira yekupinza yekupokana, chubhu inoitisa mune mbiri yakakwira mitsetse ye n diffusion zone kuita n-mhando conductive chiteshi. n-channel yekuvandudza MOSFETs inofanirwa kuiswa kugedhi nemberi kurerekera, uye chete kana gedhi sosi yemagetsi yakakura kudarika chikumbaridzo voltage checonductive chiteshi chinogadzirwa nen-channel MOSFET. n-channel depletion type MOSFETs ari n-channel MOSFETs umo inoitisa chiteshi inogadzirwa kana pasina gedhi voltage inoiswa (gedhi sosi voltage i zero).

 

Nheyo yekushanda kweMOSFET ndeyekudzora huwandu hwe "induced charge" nekushandisa VGS kushandura mamiriro eiyo conductive chiteshi inoumbwa ne "induced charge", uyezve kuzadzisa chinangwa chekudzora drain ikozvino. Mukugadzira machubhu, kuburikidza nekuita kwekuisa insulating layer mukubuda kwenhamba yakawanda yeayoni yakanaka, saka kune rumwe rutivi rweiyo interface inogona kukonzeresa mhosva yakaipa, mhosva idzi dzisina kunaka kusvika pakupinda kwepamusoro kwetsvina muN. dunhu rakabatana nekugadzirwa kweiyo conductive chiteshi, kunyangwe muVGS = 0 kune zvakare hombe yekuvuza ikozvino ID. kana gedhi regedhi richishandurwa, huwandu hwekuchaja hwakakonzereswa muchiteshi hunoshandurwa zvakare, uye iyo conductive chiteshi hupamhi uye kutetepa kwechiteshi uye shanduko, uye nekudaro iyo leakage ikozvino ID ine gedhi voltage. ID yazvino inosiyana negedhi voltage.

 

Ikozvino kushandiswa kweMOSFETyakavandudza zvikuru kudzidza kwevanhu, kushanda zvakanaka, uku ichivandudza mararamiro edu. Isu tine nzwisiso yakagadziridzwa pamusoro payo kuburikidza nekumwe kunzwisisa kuri nyore. Kwete chete ichashandiswa sechishandiso, kunzwisisa kwakawanda kwemaitiro ayo, nheyo yebasa, iyo ichatipawo zvakawanda zvinonakidza.