Diki voltage MOSFET kusarudzwa chikamu chakakosha cheiyoMOSFETkusarudzwa hakuna kunaka kunogona kukanganisa kushanda uye mutengo wedunhu rese, asi zvakare zvichaunza dambudziko rakawanda kune mainjiniya, kuti ungasarudza sei MOSFET nemazvo?
Kusarudza N-channel kana P-channel Danho rekutanga pakusarudza mudziyo wakakodzera wedhizaini kusarudza kuti woshandisa N-channel kana P-channel MOSFET Mune yakajairika magetsi application, MOSFET inoumba yakaderera-voltage side switch kana. iyo MOSFET yakadzikwa uye mutoro wakabatanidzwa kune trunk voltage. Mune yakaderera voltage side switch, N-channel MOSFET inofanirwa kushandiswa nekuda kwekufunga kwevoltage inodiwa kudzima kana kubatidza mudziyo.
Kana iyo MOSFET yakabatana nebhazi uye mutoro wakadzikwa, iyo yakakwira voltage side switch inofanirwa kushandiswa. P-channel MOSFETs inowanzo shandiswa mune iyi topology, zvakare kune voltage drive kufunga. Sarudza mwero wazvino. Sarudza chiyero chazvino cheMOSFET. Zvichienderana nemaitiro edunhu, iyi chiyero chemazuva ano chinofanirwa kunge chiri chepamusoro ikozvino iyo mutoro unogona kumira pasi pemamiriro ese.
Zvakafanana nenyaya yemagetsi, mugadziri anofanira kuve nechokwadi kuti yakasarudzwaMOSFETinogona kumira chiyero chazvino, kunyangwe iyo system iri kugadzira spike currents. Iwo maviri azvino makesi ekufunga anoenderera modhi uye pulse spikes. Mukuenderera mberi kwekuita modhi, iyo MOSFET iri munzvimbo yakatsiga, kana ikozvino ichipfuura ichipfuura nemumudziyo.
Pulse spikes ndeye kana paine masurges makuru (kana maspikes emazuva ano) anoyerera nemumudziyo. Kana iyo yakanyanya ikozvino pasi pemamiriro ezvinhu aya yakatemwa, ingori nyaya yekusarudza zvakananga mudziyo unokwanisa kumirisana nehukuru huno. Kuona Zvido zveThermal Kusarudza MOSFET kunodawo kuverenga zvinodikanwa zvekupisa zvehurongwa. Mugadziri anofanira kufunga nezvezviitiko zviviri zvakasiyana, iyo yakaipisisa kesi uye yechokwadi kesi. Zvinokurudzirwa kuti iyo yakaipisisa-yekese kuverenga ishandiswe nekuti inopa yakakura margin ekuchengetedza uye inova nechokwadi chekuti hurongwa haukundikane. Kune zvakare zvimwe zviyero zvekuziva paMOSFET data sheet; senge thermal kuramba pakati pe semiconductor junction yepakeji mudziyo uye zvakatipoteredza, uye yakanyanya tembiricha yekusangana. Kufunga nezvekuchinja mashandiro, danho rekupedzisira pakusarudza MOSFET nderekufunga nezve shanduko yekuita kweiyoMOSFET.
Kune akawanda ma paramita anokanganisa kushandura mashandiro, asi akanyanya kukosha igedhi / kudonhedza, gedhi / sosi, uye dhizaini / sosi capacitance. Aya macapacitance anogadzira kurasikirwa kwekuchinja mumudziyo nekuti anofanirwa kubhadhariswa panguva yega yega switch. iyo yekumhanyisa yekumhanyisa yeMOSFET saka yakaderedzwa uye kugona kwechigadzirwa kunoderera. Kuti uverenge kurasikirwa kwese kwechishandiso panguva yekuchinja, mugadziri anofanira kuverenga kurasikirwa-kurasikirwa (Eon) uye kurasikirwa kwekudzima.
Kana kukosha kwevGS kuri kudiki, kugona kutora maerekitironi hakuna kusimba, kubuda - kunobva pakati pezvisina conductive chiteshi, vGS inowedzera, inonyura muP substrate yekunze denga remaerekitironi pakuwedzera, kana vGS yasvika humwe kukosha, maerekitironi aya ari pagedhi padhuze neP substrate chitarisiko chinoumba nhete yeN-mhando, uye neN + mbiri dzakabatanidzwa Kana vGS yasvika pahumwe kukosha, maerekitironi aya ari pagedhi pedyo neP substrate kuonekwa anoumba N-mhando yakatetepa layer, uye yakabatana kune mbiri N + dunhu, mudhiraini - sosi inoumba N-mhando conductive chiteshi, yayo conductive mhando uye yakatarisana neP substrate, inoumba anti-mhando layer. vGS yakakura, basa rekuonekwa kwe semiconductor yesimba rakasimba remagetsi, kutorwa kwema electrons kune kunze kweP substrate, iyo inonzi conductive channel inowedzera, yakaderera chiteshi chekudzivirira. Kureva kuti, N-channel MOSFET muvGS <VT, haigone kuita conductive chiteshi, iyo chubhu iri mu cutoff state. Chero bedzi apo vGS ≥ VT, chete kana chiteshi kugadzirwa. Mushure mekunge chiteshi chagadzirwa, dhizaini ikozvino inogadzirwa nekuwedzera kumberi voltage vDS pakati pekudonhedza - sosi.
Asi Vgs inoramba ichiwedzera, ngatiti IRFPS40N60KVgs = 100V apo Vds = 0 uye Vds = 400V, mamiriro maviri, iyo tube basa kuunza chii chinokonzera, kana yakapiswa, chikonzero uye mukati memaitiro ekugadzirisa nzira yekuwedzera Vgs ichaderedza. Rds (on) inoderedza kurasikirwa kwekuchinja, asi panguva imwe chete ichawedzera Qg, kuitira kuti kurasikirwa kwekutendeuka kuve kukuru, kunokanganisa kushanda kweMOSFET GS voltage neVgg kusvika kuCgs kuchaja uye kusimuka, yakasvika pamagetsi ekugadzirisa Vth. , MOSFET inotanga conductive; MOSFET DS ikozvino kuwedzera, Millier capacitance mukati menguva nekuda kwekubudiswa kweDS capacitance uye kubuda, GS capacitance kuchaja haina kukanganisa kukuru; Qg = Cgs * Vgs, asi mutero ucharamba uchivaka.
Iyo DS voltage yeMOSFET inodonha kusvika kune imwechete voltage seVgs, iyo Millier capacitance inowedzera zvakanyanya, yekunze drive voltage inomira kuchaja iyo Millier capacitance, voltage yeGS capacitance inoramba isina kuchinjika, voltage paMillier capacitance inowedzera, ukuwo voltage. paDS capacitance inoramba ichiderera; iyo DS voltage yeMOSFET inodzikira kusvika kuvoltage payakazara conduction, iyo Millier capacitance inova diki Iyo DS voltage yeMOSFET inodonha kusvika kuvoltage pakusaturation conduction, iyo Millier capacitance inova diki uye inochajiswa pamwe neiyo GS capacitance nekunze drive. voltage, uye voltage pa GS capacitance inokwira; iwo magetsi ekuyera machani ndiwo epamba 3D01, 4D01, uye Nissan's 3SK akatevedzana.
G-pole (gedhi) kutsunga: shandisa diode giya reiyo multimeter. Kana tsoka uye mamwe maviri tsoka pakati peyakanaka uye yakaipa voltage inodonha yakakura kupfuura 2V, ndiko kuti, chiratidziro "1", tsoka iyi igedhi G. Uye wochinjanisa peni kuyera mamwe tsoka mbiri, iyo voltage inodonha idiki panguva iyoyo, peni dema yakabatana neD-pole (drain), peni tsvuku yakabatana neS-pole (mabviro).
Nguva yekutumira: Kubvumbi-26-2024
