"MOSFET" ndiyo chidimbu cheMetal Oxide Semicoductor Field Effect Transistor. Icho chinhu chakagadzirwa nezvinhu zvitatu: simbi, oxide (SiO2 kana SiN) uye semiconductor. MOSFET ndeimwe yeanonyanya kukosha maturusi mumunda we semiconductor. Kunyangwe iri muIC dhizaini kana bhodhi-level redunhu mashandisirwo, yakakura kwazvo. Iwo makuru ma paramita eMOSFET anosanganisira ID, IDM, VGSS, V(BR) DSS, RDS(pa), VGS(th), etc. Unozviziva here izvi? OLUKEY Kambani, sewinsok Taiwanese yepakati-kusvika-yepamusoro-yepakati-yepakati uye yakaderera-voltageMOSFETmumiriri webasa revhisi, ane timu yakakosha ine angangoita makore makumi maviri echiitiko kuti akutsanangurire iwe zvakadzama maparamita akasiyana eMOSFET!
Tsanangudzo yezvinoreva MOSFET paramita
1. Zvakanyanya paramita:
ID: Maximum drain-source current. Inoreva iyo yakanyanya ikozvino inotenderwa kupfuura pakati pemvura uye sosi kana munda mhedzisiro transistor iri kushanda zvakajairika. Iko kushanda ikozvino kwemunda mhedzisiro transistor haifanire kudarika ID. Iyi parameter inodzikira sezvo tembiricha yejunction inowedzera.
IDM: Maximum pulsed drain-source current. Iyi parameter inodzikira sezvo tembiricha yekusangana ichiwedzera, ichiratidza kupikisa kwekuita uye zvakare ine chekuita nenguva yekupuruzira. Kana iyi parameter iri diki zvakanyanya, sisitimu inogona kunge iri panjodzi yekuputswa neizvino panguva yekuyedzwa kweOCP.
PD: Simba guru rakaparara. Iyo inoreva kune yakanyanya kudonhedza-source simba dissipation inotenderwa pasina kushatisa mashandiro emunda mhedzisiro transistor. Kana yashandiswa, iyo chaiyo mashandisirwo emagetsi eFET anofanira kunge ari mashoma pane ayo ePDSM uye osiya imwe margin. Iyi parameter inowanzodzikira sezvo tembiricha yejunction inowedzera
VDSS: Maximum drain-source inomira voltage. Iyo drain-source voltage kana iyo inoyerera inoyerera inosvika kune chaiyo kukosha (inowedzera zvakanyanya) pasi peiyo tembiricha uye gedhi-sosi pfupi dunhu. Iyo drain-source voltage mune iyi kesi inonziwo avalanche breakdown voltage. VDSS ine yakanaka tembiricha coefficient. Pa -50°C, VDSS ingangoita 90% yeiyo pa25°C. Nekuda kwemvumo inowanzosiiwa mukugadzirwa kwakajairwa, iyo avalanche breakdown voltage yeMOSFET inogara yakakura kupfuura iyo inonzi rated voltage.
OLUKEYMazano Anodziya: Kuti uve nechokwadi chekuvimbika kwechigadzirwa, pasi pemamiriro ezvinhu akaipisisa ekushanda, zvinokurudzirwa kuti magetsi ekushanda haafaniri kudarika 80 ~ 90% yehuwandu hwehuwandu.
VGSS: Yakakura gedhi-sosi inomira voltage. Inoreva kukosha kweVGS apo reverse ikozvino pakati pegedhi uye sosi inotanga kuwedzera zvakanyanya. Kupfuura iyi voltage kukosha kunokonzeresa kuparara kwedielectric yegedhi oxide layer, inoparadza uye isingadzokeki kuparara.
TJ: Maximum yekushanda junction tembiricha. Kazhinji i150 ℃ kana 175 ℃. Pasi pemamiriro ekushanda ekugadzirwa kwechigadzirwa, zvinodikanwa kuti udzivise kudarika iyi tembiricha uye kusiya imwe margin.
TSTG: kuchengetedza tembiricha renji
Aya ma paramita maviri, TJ neTSTG, anogadzirisa tembiricha yejoni inotenderwa nenzvimbo yekushanda uye yekuchengetedza. Iri tembiricha renji rakaiswa kuti rizadzikise hudiki hwehupenyu hwekushandisa zvinodiwa zvemudziyo. Kana mudziyo ukavimbiswa kushanda mukati meiyi tembiricha renji, hupenyu hwayo hwekushanda huchawedzerwa zvakanyanya.
2. Static parameters
MOSFET bvunzo mamiriro anowanzo 2.5V, 4.5V, uye 10V.
V (BR) DSS: Drain-source breakdown voltage. Inoreva iyo yakanyanya drain-source voltage iyo munda mhedzisiro transistor inogona kumira kana gedhi-source voltage VGS iri 0. Iyi inoganhura parameter, uye magetsi ekushandisa anoshandiswa kumunda mhedzisiro transistor inofanira kunge iri pasi peV (BR) DSS. Iine maitiro akanaka ekushisa. Nokudaro, kukosha kweiyi parameter pasi pemamiriro ekushisa kwakadzika kunofanira kutorwa sekuchengetedzwa kwekuchengetedza.
△V(BR)DSS/△Tj: Tembiricha coefficient of drain-source breakdown voltage, kazhinji 0.1V/℃
RDS(on): Pasi pemamwe mamiriro eVGS (kazhinji 10V), tembiricha yekusangana uye kudonhedza ikozvino, iyo yakanyanya kupikisa pakati pekudonhedza uye kunobva kana MOSFET yabatidzwa. Iyo yakakosha paramende inosarudza simba rinoshandiswa kana MOSFET ikabatidzwa. Iyi parameter inowanzo wedzera sezvo tembiricha yejunction inowedzera. Naizvozvo, kukosha kweiyi parameter pane yakanyanya kushanda junction tembiricha inofanirwa kushandiswa kuverenga kurasikirwa uye kudonha kwevoltage.
VGS (th): kutendeuka-on voltage (chikumbaridzo voltage). Kana iyo yekunze gedhi rekudzora voltage VGS inodarika VGS (th), iyo yepamusoro inversion maseru edhiri uye nzvimbo dzinobva dzinoumba chiteshi chakabatana. Mumashandisirwo, iyo gedhi voltage kana ID yakaenzana ne1 mA pasi pedhiraivha pfupi-circuit mamiriro inowanzodaidzwa kunzi turn-on voltage. Iyi parameter inowanzodzikira sezvo tembiricha yejunction inowedzera
IDSS: saturated drain-source current, the drain-source current kana gedhi voltage VGS = 0 uye VDS iri imwe kukosha. Kazhinji pane iyo microamp level
IGSS: gedhi-sosi dhiraivha ikozvino kana reverse ikozvino. Sezvo iyo MOSFET yekupinza impedance yakakura kwazvo, IGSS inowanzo iri munhanho yenanoamp.
3. Dynamic parameters
gfs: transconductance. Inoreva chiyero cheshanduko mukudonha kwemvura ikozvino kune shanduko yegedhi-source voltage. Icho chiyero chekugona kwegedhi-source voltage kudzora kudonhedza ikozvino. Ndokumbira utarise chati yehukama hwekufambisa pakati pegfs neVGS.
Qg: Yese gedhi yekuchaja huwandu. MOSFET mudziyo wekutyaira-voltage. Nzira yekutyaira ndiyo nzira yekugadzwa kwegedhi voltage. Izvi zvinowanikwa nekuchaja iyo capacitance pakati pegedhi sosi uye gedhi drain. Ichi chikamu chichakurukurwa zvakadzama pazasi.
Qgs: Gedhi sosi yekuchaja huwandu
Qgd: gedhi-ku-drain charge (tichifunga nezveMiller maitiro). MOSFET mudziyo wekutyaira-voltage. Nzira yekutyaira ndiyo nzira yekugadzwa kwegedhi voltage. Izvi zvinowanikwa nekuchaja iyo capacitance pakati pegedhi sosi uye gedhi drain.
Td (pa): conduction kunonoka nguva. Iyo nguva kubva apo magetsi ekuisa anokwira kusvika ku10% kusvika VDS yadonha kusvika 90% yeamplitude yayo.
Tr: nguva yekusimuka, nguva yekubuda kwevoltage VDS kudonha kubva pa90% kusvika 10% yeamplitude yayo.
Td (kudzima): Kudzima nguva yekunonoka, nguva kubva painodonha voltage yekuisa kusvika pa90% kusvika VDS painokwira kusvika gumi muzana yemagetsi ekudzima.
Tf: Nguva yekudonha, nguva yekubuda kwevoltage VDS kusimuka kubva pa10% kusvika 90% yeamplitude yayo.
Ciss: Input capacitance, short-circuit the drain and source, uye kuyera capacitance pakati pegedhi nenzvimbo nechiratidzo che AC. Ciss = CGD + CGS (CDS short circuit). Iyo ine mhedzisiro yakananga pakutendeuka-kuvhura uye kudzima kunonoka kwechigadzirwa.
Coss: Capacitance yekubuda, pfupi-sekita gedhi nenzvimbo, uye kuyera capacitance pakati pedhiraini uye kunobva nechiratidzo che AC. Coss = CDS +CGD
Crss: Reverse transmission capacitance. Iine sosi yakabatana nevhu, iyo yakayerwa capacitance pakati pemvura uye gedhi Crss = CGD. Imwe yematanho akakosha ekuchinja ndeyekusimuka nekudonha nguva. Crss=CGD
Iyo interelectrode capacitance uye MOSFET induced capacitance yeMOSFET yakakamurwa kuita yekupinza capacitance, inobuda capacitance uye mhinduro capacitance nevazhinji vagadziri. Makoshero ataurwa ndeeiyo yakagadziriswa drain-to-source voltage. Aya macapacitances anoshanduka sezvo iyo drain-source voltage inoshanduka, uye kukosha kweiyo capacitance ine zvishoma. Iko kupinza capacitance kukosha kunongopa fungidziro yekuchaja inodikanwa nemutyairi wedunhu, nepo gedhi rekuchaja ruzivo runonyanya kubatsira. Inoratidza huwandu hwesimba iro gedhi rinofanira kuchaja kuti risvike kune chaiyo gedhi-kune-sosi voltage.
4. Avalanche kuparara maitiro parameters
Iyo avalanche breakdown hunhu paramende chiratidzo chekugona kweMOSFET kumirisana nekuwandisa munzvimbo iri kure. Kana iyo voltage ichipfuura iyo drain-source limit voltage, mudziyo uchave uri muavalanche state.
EAS: Single pulse avalanche breakdown simba. Uyu ndiwo muganho paramende, unoratidza iyo yakanyanya avalanche yekuputsa simba iyo MOSFET inogona kumira.
IAR: avalanche ikozvino
NZEVE: Yakadzokororwa Avalanche Breakdown Energy
5. In vivo diode parameters
IS: Inoenderera yakakwira freewheeling ikozvino (kubva kunobva)
ISM: pulse maximum freewheeling ikozvino (kubva kunobva)
VSD: kudonha kwemagetsi kumberi
Trr: reverse kudzoreredza nguva
Qrr: Reverse charge kudzoreredza
Ton: Pamberi conduction nguva. (Hazvina basa)
MOSFET yekuvhura-nguva uye yekudzima-nguva tsananguro
Munguva yekushandiswa kwechikumbiro, zvinotevera maitiro zvinowanzoda kutariswa:
1. Positive tembiricha coefficient maitiro eV (BR) DSS. Hunhu uhu, hwakasiyana nemidziyo yebipolar, inoita kuti ive yakavimbika sezvo tembiricha yemazuva ese inoshanda ichiwedzera. Asi iwe zvakare unofanirwa kutarisisa kuvimbika kwayo panguva yakaderera-kutonhora kunotanga.
2. Negative tembiricha coefficient maitiro eV (GS) th. Iyo gedhi chikumbaridzo chinogona kuderera kune imwe nhanho sezvo tembiricha yejunction inowedzera. Mamwe mwaranzi anozodzikisawo mukana uyu wepakati, pamwe kunyangwe pazasi 0 kugona. Ichi chimiro chinoda mainjiniya kuti atarise kupindira uye kukonzeresa kwenhema kweMOSFET mumamiriro ezvinhu aya, kunyanya kuMOSFET maapplication ane yakaderera chikumbaridzo mikana. Nekuda kwehunhu uhu, dzimwe nguva zvinodikanwa kugadzira iyo-off-voltage inokwanisa yemutyairi wegedhi kune kukosha kwakashata (kureva N-mhando, P-mhando uye zvichingodaro) kudzivirira kupindira uye kukonzeresa kwenhema.
3.Positive tembiricha coefficient maitiro eVDSon/RDSo. Hunhu hwekuti VDSon/RDSon inowedzera zvishoma sezvo tembiricha yejunction inowedzera inoita kuti zvikwanise kushandisa zvakananga MOSFETs zvakafanana. Bipolar zvishandiso zvakangopesana mune izvi, saka kushandiswa kwavo mukufanana kunove kwakaoma. RDSon ichawedzerawo zvishoma sezvo ID inowedzera. Uhu hunhu uye hunhu hwakanaka hwekushisa kwejunction uye pamusoro RDSon inogonesa MOSFET kudzivirira kuparara kwechipiri senge bipolar zvishandiso. Nekudaro, zvinofanirwa kucherechedzwa kuti mhedzisiro yeichi chimiro ishoma. Kana yakashandiswa mukufanana, kusunda-dhonza kana mamwe maapplication, haugone kuvimba zvizere nekuzvitonga kwechinhu ichi. Mamwe matanho anokosha achiri kudiwa. Hunhu uhu hunotsanangurawo kuti kurasikirwa kwekuita kunove kwakakura pakupisa kwakanyanya. Nokudaro, kunyanya kukoshesa kunofanira kubhadharwa pakusarudzwa kwemiganhu pakuverenga kurasikirwa.
4. Iyo yakaipa tembiricha coefficient maitiro eID, kunzwisiswa kweMOSFET paramita uye yayo huru hunhu ID ichaderera zvakanyanya sezvo tembiricha yejunction inowedzera. Hunhu uhu hunoita kuti kazhinji hunofanirwa kufunga nezve ID yayo paramita pakupisa kwakanyanya panguva yekugadzira.
5. Negative tembiricha coefficient maitiro eavalanche kugona IER/EAS. Mushure mekunge tembiricha yejunction yawedzera, kunyangwe MOSFET ichave neV (BR) DSS yakakura, zvinofanirwa kucherechedzwa kuti EAS ichaderedzwa zvakanyanya. Kureva kuti, kugona kwayo kushingirira maavalanches pasi pemamiriro ekushisa akanyanya kuderera kupfuura iwo pakudziya kwakajairika.
6. Kugona kuitisa uye kudzoreredza kudzoreredza kuita kweparasitic diode muMOSFET hakuna nani pane iyo yakajairika diode. Izvo hazvitarisirwi kushandiswa seyo huru ikozvino inotakura muchiuno mukugadzira. Kuvharira diode kunowanzo kubatanidzwa munhevedzano kuti kusashanda kweparasitic diode mumuviri, uye mamwe akafanana diode anoshandiswa kugadzira redunhu magetsi anotakura. Nekudaro, inogona kutariswa semutakuri mune yenguva pfupi conduction kana zvimwe zvidiki zvazvino zvinodiwa senge synchronous rectification.
7. Kukurumidzira kusimuka kwekudonha kunogona kukonzera kunyengedza-kukonzera kwegedhi motokari, saka mukana uyu unoda kufungidzirwa mumapurogiramu makuru eDVDS / dt (high-frequency fast switching circuits).
Nguva yekutumira: Zvita-13-2023
