Iyo yekushanda musimboti weMOSFET inonyanya kuenderana neyakasarudzika zvimiro uye magetsi emunda mhedzisiro. Iyi inotevera tsananguro yakadzama yemashandiro anoita MOSFETs:
I. Chimiro cheMOSFET
MOSFET inonyanya kuve gedhi (G), sosi (S), dhiraini (D), uye substrate (B, dzimwe nguva yakabatana kune sosi kugadzira matatu-terminal mudziyo). MuN-channel yekusimudzira MOSFETs, iyo substrate inowanzove yakaderera-doped P-mhando silicon zvinhu pairi nzvimbo mbiri dzakanyanya doped N-mhando dzakagadzirwa kuti dzishande sesosi uye dhiza, zvichiteerana. Pamusoro peP-type substrate yakafukidzwa nefirimu yakaonda kwazvo yeoxide (silicon dioxide) sechidziviriro chekudzivirira, uye electrode inodhirowa segedhi. Chimiro ichi chinoita kuti gedhi rivharirwe kubva kuP-mhando semiconductor substrate, mudonzvo uye sosi, uye nekudaro inodaidzwa kunzi insulated-gedhi remunda wekuita chubhu.
II. Nheyo yekushanda
MOSFETs inoshanda nekushandisa gedhi source voltage (VGS) kudzora dhiraivha iripo (ID). Kunyanya, kana iyo yakashandiswa yakanaka gedhi sosi voltage, VGS, yakakura kupfuura zero, yekumusoro yakanaka uye yakaderera isina kunaka munda yemagetsi ichaonekwa pane oxide layer pazasi pegedhi. Iyi nzvimbo yemagetsi inokwezva maerekitironi akasununguka muP-nharaunda, zvichiita kuti aunganidze pazasi peiyo oxide layer, apo ichidzinga maburi muP-region. Sezvo VGS ichiwedzera, simba remunda wemagetsi rinowedzera uye kuwanda kwemaerekitironi emahara kunowedzera. Kana VGS yasvika pane imwe threshold voltage (VT), kuwanda kwemaerekitironi akasununguka akaungana mudunhu akakura zvekukwanisa kuumba dunhu idzva reN-rudzi (N-channel), rinoita sebhiriji rinobatanidza dhiri nekwakabva. Panguva ino, kana imwe dhiraivha yekutyaira (VDS) iripo pakati pekudonhedza uye sosi, iyo yekudonha ikozvino ID inotanga kuyerera.
III. Kuumbwa uye kuchinja kwekuita chiteshi
Kuumbwa kwenzira yekuitisa ndiyo kiyi yekushanda kweMOSFET. Kana VGS yakakura kupfuura VT, chiteshi chekuitisa chinotangwa uye iyo yekudonhedza ikozvino ID inobatwa neVGS uye VDS.VGS inokanganisa ID nekudzora hupamhi uye chimiro cheiyo inoitisa chiteshi, nepo VDS ichibata ID zvakananga seyekutyaira voltage. zvakakosha kuziva kuti kana chiteshi chekufambisa chisina kusimbiswa (kureva, VGS iri pasi peVT), zvino kunyange kana VDS iripo, iyo yekudonha ikozvino ID haioneki.
IV. Hunhu hweMOSFETs
High input impedance:Iyo yekupinza impedance yeMOSFET yakakwira zvakanyanya, padyo nekusingaperi, nekuti pane insulating layer pakati pegedhi nenzvimbo-yekudonha-nzvimbo uye chete gedhi risina simba razvino.
Low output impedance:MOSFETs midziyo inodzorwa nevoltage umo sosi-drain ikozvino inogona kuchinja neiyo yekuisa voltage, saka kuburitsa kwavo kudiki.
Kuyerera nguva dzose:Paunenge uchishanda munzvimbo yesaturation, iyo yazvino yeMOSFET haina kukanganiswa nekuchinja kweiyo sosi-drain voltage, ichipa yakanakisa inogara iripo.
Kugadzikana kwakanaka kwekushisa:MaMOSFET ane tembiricha yekushanda yakakura kubva -55°C kusvika ku +150°C.
V. Zvikumbiro uye kupatsanura
MOSFETs anoshandiswa zvakanyanya mumaseketi edhijitari, analogue maseketi, magetsi maseketi uye mamwe minda. Zvinoenderana nerudzi rwekushanda, maMOSFET anogona kuiswa mumhando dzekusimudzira nekupera; zvinoenderana nerudzi rwekuitisa chiteshi, vanogona kuiswa muN-channel uye P-channel. Aya marudzi akasiyana eMOSFET ane zvawo zvakanakira mune akasiyana mashandisirwo mamiriro.
Muchidimbu, musimboti wekushanda weMOSFET kudzora kuumbwa uye shanduko yenzira yekuitisa kuburikidza negedhi sosi voltage, iyo inozodzora kuyerera kwekudonhedza ikozvino. Yayo yakakwirira yekupinza impedance, yakaderera kubuda impedance, inogara iripo uye kugadzikana kwekushisa kunoita kuti MOSFETs ive chinhu chakakosha mumaseketi emagetsi.
Nguva yekutumira: Sep-25-2024
