MaMOSFET anoshanda sei?

1, MOSFETsumo

FieldEffect Transistor pfupiso (FET)) zita reMOSFET. nenhamba shoma yevatakuri kutora chikamu mukupisa conduction, inozivikanwawo se-multi-pole transistor. Iyo ndeye voltage mastering mhando semi-superconductor mechanism. Pane kuve nekubuda kwekupokana kwakakwira (10 ^ 8 ~ 10 ^ 9Ω), ruzha rwakaderera, kuderera kwesimba rekushandisa, static renji, nyore kubatanidza, hapana yechipiri kuparara chiitiko, inishuwarenzi basa regungwa rakafara uye zvimwe zvakanakira, zvachinja. iyo bipolar transistor uye simba junction transistor yevashandi vakasimba.

 

2, MOSFET maitiro

1, MOSFET mudziyo wekudzora magetsi, iyo kuburikidza neVGS (gedhi sosi voltage) control ID (drain DC);

2, MOSFET'syakabuda DC pole idiki, saka inobuda kuramba yakakura.

3, iko kushandiswa kwenhamba shoma yevatakuri kuti vaite kupisa, saka ane mwero uri nani wekugadzikana;

4, inosanganisira nzira yekudzikisa yemagetsi ekuderedza coefficient idiki pane iyo triode inosanganisira nzira yekudzikisa yekudzikisa coefficient;

5, MOSFET anti-irradiation kugona;

6, nekuda kwekushaikwa kwechikanganiso chiitiko chekupararira kweoligon kunokonzerwa neakapararira zvidimbu zveruzha, saka ruzha rwakaderera.

 

3, MOSFET basa musimboti

MOSFET'skushanda musimboti mumutsara mumwe, ndeye "drain - sosi pakati peID inoyerera nemugedhi regedhi uye chiteshi pakati pepn junction yakaumbwa nereverse bias yegedhi voltage master ID", kunyatsoita, ID inoyerera nehupamhi. yenzira, ndiko kuti, chiteshi chemuchinjiko-chikamu, ndiko kushanduka kwereverse bias yepn junction, iyo inoburitsa depletion layer Chikonzero chekuwedzera kusiyanisa kutonga. Mugungwa risina kuzara reVGS = 0, sezvo kuwedzera kwechitubu cheshanduko hakusi kukuru, maererano nekuwedzera kwemagnetic field yeVDS pakati pemvura-source, mamwe maerekitironi ari mugungwa remvura anodhonzwa nemhepo. dhiraivha, kureva kuti, pane DC ID chiitiko kubva mudhiraini kuenda kunobva. Iyo ine mwero layer yakakwidziridzwa kubva kugedhi kuenda kudhiri inoita kuti muviri wese wechiteshi uite rudzi rwekuvharira, ID yakazara. Dana iyi fomu kuti pinch-off. Kufananidzira shanduko yekuchinja kune chiteshi chekuvharira kwese, pane DC simba rakagurwa.

 

Nekuda kwekuti hapana kusununguka kufamba kwemaerekitironi nemaburi muchikamu cheshanduko, ine inenge insulating zvivakwa muchimiro chakakodzera, uye zvinonetsa kuti general current iyerere. Asi ipapo yemagetsi munda pakati dhiraivha - tsime, chaizvoizvo, maviri shanduko layer kuonana dhiraivha uye gedhi danda pedyo nechepazasi chikamu, nokuti kukukurwa yemagetsi munda anokweva pamusoro-nokukurumidza maerekitironi kuburikidza shanduko layer. Kusimba kwenzvimbo yekukukurwa kunenge kunogara kuchigadzira kuzara kweiyo ID chiitiko.

 

Dunhu rinoshandisa musanganiswa weiyo yakakwidziridzwa P-chiteshi MOSFET uye yakakwidziridzwa N-chiteshi MOSFET. Kana iyo yekupinda yadzikira, iyo P-channel MOSFET inoitisa uye inobuda yakabatana kune yakanaka terminal yemagetsi. Kana iyo yekuisa yakakwira, iyo N-channel MOSFET inoitisa uye iyo inobuda yakabatana kune magetsi emagetsi. Mudunhu iri, iyo P-channel MOSFET neN-channel MOSFET inogara ichishanda munzvimbo dzakapokana, nechikamu chavo chekupinda uye zvinobuda.