Gate capacitance, on-resistance uye mamwe ma paramita eMOSFETs

I. Gate capacitance

Gedhi capacitance inonyanya kusanganisira yekupinza capacitance (Ciss), inobuda capacitance (Coss) uye reverse kufambisa capacitance (Crss, inozivikanwawo seMiller capacitance).

 

Input Capacitance (Ciss):

 

TSANANGURO: Iyo yekupinza capacitance ndiyo yakazara capacitance pakati pegedhi uye chitubu uye ichidonhedza, uye ine gedhi source capacitance (Cgs) uye gedhi drain capacitance (Cgd) yakabatana mune parallel, kureva Ciss = Cgs + Cgd.

 

Basa: Iyo yekupinza capacitance inokanganisa kukurumidza kwekuchinja kweMOSFET. Kana iyo yekupinza capacitance ichibhadhariswa kune voltage pachikumbaridzo, mudziyo unogona kuvhurwa; yakaburitswa kune imwe kukosha, mudziyo unogona kudzimwa. Naizvozvo, dhiraivha yekutyaira uye Ciss ine tarisiro yakananga pakutendeuka kwechigadzirwa uye kudzima kunonoka.

 

Kukwanisa kubuda (Coss):

Tsanangudzo: Iyo yekuburitsa capacitance ndiyo yakazara capacitance pakati pedhiraini uye sosi, uye ine drain-source capacitance (Cds) uye gedhi-drain capacitance (Cgd) zvakafanana, kureva Coss = Cds + Cgd.

 

Basa: Mune zvinyoro-kuchinja maapplication, Coss yakakosha nekuti inogona kukonzera resonance mudunhu.

 

Reverse Transmission Capacitance (Crss):

Tsanangudzo: Iyo reverse yekufambisa capacitance yakaenzana negedhi drain capacitance (Cgd) uye inowanzonzi iyo Miller capacitance.

 

Basa: Iyo reverse yekufambisa capacitance ndiyo yakakosha parameter yekusimuka nekudonha nguva yekuchinja, uye inokanganisawo kudzima nguva yekunonoka. Iyo capacitance kukosha inodzikira sezvo iyo drain-source voltage inowedzera.

II. On-resistance (Rds(on))

 

Tsanangudzo: On-resistance ndiko kupokana pakati penzvimbo uye kudonhedza kweMOSFET munzvimbo-pasi pasi pemamiriro chaiwo (semuenzaniso, chaiyo inodonha ikozvino, gedhi voltage, uye tembiricha).

 

Kufurira zvinhu: On-resistance haisi yakakosha kukosha, inobatwa nekushisa, iyo yakanyanya tembiricha, iyo yakakura maRds (pa). Pamusoro pezvo, iyo yakakwirira yekumira voltage, iyo yakakura chimiro chemukati cheMOSFET, iyo inokwirisa inoenderana pa-resistance.

 

 

Kukosha: Paunenge uchigadzira switching magetsi kana dhiraivha redunhu, zvinodikanwa kufunga nezve-kupokana kweMOSFET, nekuti yazvino inoyerera nemuMOSFET ichapedza simba pakupokana uku, uye chikamu ichi chesimba rinopedzwa chinonzi pa- kuramba kurasikirwa. Kusarudza MOSFET ine yakaderera pa-resistance inogona kuderedza iyo-kuramba kurasikirwa.

 

Chechitatu, zvimwe zvinokosha parameters

Pamusoro peiyo gedhi capacitance uye pa-kupokana, iyo MOSFET ine mamwe maparamita akakosha akadai se:

V(BR)DSS (Drain Source Breakdown Voltage):Iyo drain source voltage iyo ikozvino inoyerera nemudhiraini inosvika kune chaiyo kukosha pane chaiyo tembiricha uye negedhi sosi rakapfupika. Pamusoro pekukosha uku, chubhu inogona kukuvara.

 

VGS(th) (Threshold Voltage):Iyo voltage yegedhi inodiwa kuita kuti nzira yekuitisa itange kuumbwa pakati penzvimbo nekudonha. Kune yakajairwa N-channel MOSFETs, VT inenge 3 kusvika 6V.

 

ID (Maximum Continuous Drain Current):Iyo yakanyanya kuenderera inoenderera DC ikozvino iyo inogona kubvumidzwa ne chip pahupamhi yakayerwa junction tembiricha.

 

IDM (Maximum Pulsed Drain Current):Inoratidza mwero we pulsed ikozvino iyo mudziyo unogona kubata, ine pulsed ikozvino yakakwira zvakanyanya kupfuura inoenderera DC ikozvino.

 

PD (yakakura simba rekubvisa):chigadziro chinogona kuparadza simba guru rekushandisa.

 

Muchidimbu, kugona kwegedhi, kupikisa uye mamwe maparamendi eMOSFET akakosha pakuita kwayo uye mashandisirwo ayo, uye inoda kusarudzwa uye kugadzirwa zvinoenderana nechaiyo mamiriro ekushandisa uye zvinodiwa.