Wanga uchiziva nezve shanduko yeMOSFET?

I. Mafungiro epakutanga uye kuongorora

Concept yakarongwa:Kugadzirwa kweMOSFET kunogona kuteverwa kumashure kusvika kuma1830s, apo pfungwa yemunda mhedzisiro transistor yakaunzwa neGerman Lilienfeld. Zvisinei, kuedza panguva iyi hakuna kubudirira pakuziva MOSFET inoshanda.

Chidzidzo chekutanga:Mushure mezvo, maBell Labs eShaw Teki (Shockley) nevamwe vakaedzawo kudzidza kugadzirwa kwemachubhu emumunda, asi zvakafanana zvakatadza kubudirira. Nekudaro, tsvakiridzo yavo yakaisa hwaro hwekuvandudzwa kweMOSFET.

II. Kuberekwa uye kutanga kukura kweMOSFETs

Kuburikidza Kwakakosha:Muna 1960, Kahng naAtalla vakangoerekana vagadzira MOS field effect transistor (MOS transistor kwenguva pfupi) mukugadzirisa kushanda kwebipolar transistors nesilicon dioxide (SiO2). Ichi chigadzirwa chakaratidza kupinda zviri pamutemo kweMOSFET muindasitiri yakabatanidzwa yedunhu rekugadzira.

Kuvandudza Kuita:Nekuvandudzwa kwe semiconductor process tekinoroji, kuita kweMOSFET kunoramba kuchivandudza. Semuenzaniso, magetsi ekushanda emagetsi akakwirira-voltage MOS anogona kusvika 1000V, kukosha kwekupikisa kweMOS-resistance MOS inongova 1 ohm, uye kushandiswa kwemhepo kunotangira kubva kuDC kusvika kune megahertz dzakawanda.

III. Kushandiswa kwakawanda kweMOSFET uye hunyanzvi hwekuvandudza tekinoroji

Inoshandiswa zvakanyanya:MaMOSFET anoshandiswa zvakanyanya mumhando dzakasiyana dzemagetsi, senge microprocessors, ndangariro, logic maseketi, nezvimwe, nekuda kwekuita kwavo kwakanaka. Mumidziyo yemazuva ano yemagetsi, MOSFETs chimwe chezvinhu zvakakosha.

 

Tekinoroji innovation:Kuti isangane nezvinodiwa zvemafambisirwo epamusoro ekushanda uye mazinga emagetsi epamusoro, IR yakagadzira yekutanga simba MOSFET. zvino, mhando nyowani dzemagetsi emagetsi dzakaunzwa, senge IGBTs, GTOs, IPMs, nezvimwewo, uye dzave dzichishandiswa zvakanyanya mundima dzine hukama.

Material innovation:Nekufambira mberi kwehunyanzvi, zvinhu zvitsva zviri kuongororwa zvekugadzirwa kweMOSFETs; semuenzaniso, silicon carbide (SiC) zvinhu zviri kutanga kugamuchira kutariswa uye kutsvagisa nekuda kwehukuru hwazvo hwemuviri.SiC zvinhu zvine yakakwirira yekupisa conductivity uye inorambidzwa bandwidth zvichienzaniswa neyakajairwa Si zvinhu, iyo inosarudza yavo yakanaka kwazvo senge yakakwira density, yakakwirira. kuparara kwemunda simba, uye yakakwirira kushanda tembiricha.

Chechina, MOSFET yekucheka-kumucheto tekinoroji uye nzira yekusimudzira

Dual Gate Transistors:Matekinoroji akasiyana arikuyedzwa kugadzira maviri emagedhi transistors kuti aenderere mberi nekuvandudza mashandiro eMOSFET. Dual gedhi MOS transistors ane zvirinani shrinkability zvichienzaniswa negedhi rimwe chete, asi shrinkability yavo ichiri shoma.

 

Short trench effect:Yakakosha nzira yekusimudzira yeMOSFET kugadzirisa dambudziko reiyo pfupi-chiteshi maitiro. Iyo pfupi-chani mhedzisiro inodzikamisa kumwe kuvandudzwa kwekuita kwechishandiso, saka zvinodikanwa kukunda dambudziko iri nekudzikisa kudzika kwenzvimbo yekubva uye dhizaini, uye kutsiva kwainobva uye kudonhedza PN junctions nesimbi-semiconductor contacts.