I. Tsanangudzo yeMOSFET
Semagetsi anotyairwa, akakwira-azvino zvishandiso, MOSFETs vane nhamba huru yezvikumbiro mumaseketi, kunyanya masimba emagetsi. MOSFET body diodes, inozivikanwawo separasitic diodes, haiwanikwe mune lithography yemasekete akabatanidzwa, asi anowanikwa mune akasiyana MOSFET zvishandiso, izvo zvinopa reverse dziviriro uye kuenderera mberi kwazvino kana ichityairwa nemhepo yakakwira uye kana inductive mitoro iripo.
Nekuda kwekuvapo kweiyi diode, mudziyo weMOSFET haugone kungoonekwa uchichinja dunhu, semudunhu rekuchaja uko kuchaja kwapera, simba rinobviswa uye bhatiri rinodzokera kunze, izvo zvinowanzova zvisingadiwe mhedzisiro.
Sarudzo yakajairika ndeyekuwedzera diode kumashure kudzivirira reverse magetsi, asi maitiro eiyo diode anoona kudiwa kwekudonha kwemagetsi kumberi kwe 0.6 ~ 1V, izvo zvinokonzeresa chizvarwa chakakomba chekupisa pamhepo yakakwira ichikonzera marara. yesimba uye kuderedza simba rose rekushandisa. Imwe nzira ndeyekuisa kumashure-ku-kumashure MOSFET, uchishandisa yakaderera pane-kupokana kweMOSFET kuwana simba rekushandisa.
Izvo zvinofanirwa kucherechedzwa kuti mushure mekuita, iyo MOSFET's isiri-directional, saka mushure mekumanikidzwa conduction, yakaenzana newaya, inongodzivirira chete, isina on-state voltage inodonha, kazhinji yakazadzwa pa-kupokana kwemamiriyoni mashoma kusvika.mamiriyoni panguva, uye isiri-directional, ichibvumira DC uye AC simba kupfuura.
II. Hunhu hweMOSFETs
1, MOSFET mudziyo unodzorwa nevoltage, hapana nhanho yekufambisa inodiwa kutyaira mafungu akakwira;
2, Kupikisa kwepamusoro kwekuisa;
3, yakakura yekushanda frequency renji, yakakwirira switching kumhanya, yakaderera kurasikirwa
4, AC yakasununguka yakakwirira impedance, yakaderera ruzha.
5,Multiple parallel kushandiswa, wedzera kubuda ikozvino
Chechipiri, kushandiswa kweMOSFET mukuita kwekuchengetedza
1, kuitira kuti ive nechokwadi chekushandiswa kwakachengeteka kweMOSFET, mumutsara dhizaini, haifanire kudarika pombi yemagetsi dissipation, yakakwira leakage source voltage, gedhi source voltage uye zvazvino uye mamwe parameter muganho.
2, marudzi akasiyana eMOSFET ari kushandiswa, anofaniranyatsopinda zvinoenderana neinodiwa yekuwana dunhu, kutevedzera polarity yeMOSFET offset.
3. Paunenge uchiisa MOSFET, teerera kunzvimbo yekuisa kuti udzivise pedyo nechokupisa. Kuti udzivise kudengenyeka kwemafittings, shell inofanira kusimbiswa; kupeta mapini anotungamira kunofanirwa kuitwa zvakakura kupfuura saizi yemidzi ye5mm kudzivirira pini kubva pakukotama uye kubuda.
4, nekuda kweiyo yakanyanya kupinza yekupinza, maMOSFET anofanirwa kupfupikiswa kunze kwepini panguva yekufambisa nekuchengetedza, uye akaputirwa nesimbi shielding kudzivirira kunze kukonzeresa kuparara kwegedhi.
5. Mhepo yegedhi rejinji MOSFETs haigoni kuchinjwa uye inogona kuchengetwa munzvimbo yakazaruka, asi kupikisa kwekuisa kwe-insulated-gedhi MOSFETs kwakakwirira zvikuru kana isiri kushandiswa, saka electrode imwe neimwe inofanira kuva pfupi-inotenderera. Paunenge uchitengesa insulated-gedhi MOSFETs, tevera kurongeka kwesource-drain-gedhi, uye solder ine simba rakadzima.
Kuti uve nechokwadi chekushandiswa kwakachengeteka kweMOSFETs, unofanirwa kunzwisisa zvizere maitiro eMOSFET uye matanho anotorwa mukushandiswa kwemaitiro, ndinovimba kuti pfupiso iri pamusoro ichakubatsira iwe.
Nguva yekutumira: May-15-2024
