D-FET iri mune 0 gedhi bias kana kuvepo kwechiteshi, inogona kuitisa FET; E-FET iri mune 0 gedhi bias kana pasina chiteshi, haigone kuitisa FET. marudzi maviri aya eFET ane maitiro nemashandisirwo awo. Kazhinji, kukwidziridzwa FET mune yakakwirira-kumhanya, yakaderera-simba maseketi yakakosha kwazvo; uye mudziyo uyu uri kushanda, ndiyo polarity yegedhi bias vokupera uye kudonha voltage yezvakafanana, zviri nyore mukugadzirwa kwedunhu.
Iyo inonzi yakawedzera nzira: kana VGS = 0 chubhu inzvimbo yakachekwa, pamwe neVGS chaiyo, ruzhinji rwevatakuri vanokwezvwa kugedhi, nokudaro "kunatsiridza" vatakuri munharaunda, vachigadzira chiteshi chekufambisa. n-channel yakakwidziridzwa MOSFET inonyanya kuruboshwe-kurudyi symmetrical topology, inova P-mhando semiconductor pachizvarwa chechikamu cheSiO2 firimu insulation. Iyo inogadzira iyo insulating layer yeSiO2 firimu pane P-type semiconductor, uye yobva yaparadzanisa matunhu maviri ane doped N-mhando ne.photolithography, uye inotungamirira maelectrodes kubva munharaunda yeN-mhando, imwe yemvura D uye imwe yetsime S. A aluminium metal layer yakaputirwa pa insulating layer pakati pechitubu uye dhiraivha segedhi G. Apo VGS = 0 V , kune madhiodhi akati wandei ane madhidhiyo ekumashure-kumashure pakati pedhiri nekwakabva uye mhepo iri pakati peD neS haiumbe ikozvino pakati peD neS. Ikozvino pakati peD neS haina kuumbwa nemhepo inoshandiswa .
Kana magetsi egedhi awedzerwa, kana 0 <VGS <VGS(th), kuburikidza necapacitive electric field yakaumbwa pakati pegedhi ne substrate, maburi e polyon ari muP-type semiconductor ari padhuze nechepazasi pegedhi anodzingirwa pasi, uye hutete hwekuderera kweiyoni yakaipa hunooneka; panguva imwecheteyo, iyo ichakwezva oligons imomo kuti iende kune iyo yepamusoro layer, asi nhamba yacho ishoma uye haina kukwana kuti iite conductive chiteshi inotaurirana kudonhedza uye kunobva, saka haisati yakwana kuFormation yekudonhedza ikozvino ID. kuwedzera kuwedzera VGS, kana VGS > VGS (th) (VGS (th) inonzi turn-on voltage), nokuti panguva ino magetsi egedhi anga akasimba, muP-type semiconductor surface layer pedyo nechepasi pegedhi pazasi pekuunganidza zvimwe. maerekitironi, unogona kugadzira mugero, mugero uye tsime rekukurukurirana. Kana iyo drain source voltage yakawedzerwa panguva ino, iyo yekudonhedza ikozvino inogona kuumbwa ID. maerekitironi ari mugedhi rekufambisa akaumbwa pazasi pegedhi, nekuda kwegomba rekutakura rine P-type semiconductor polarity rakapesana, saka inonzi anti-type layer. Sezvo VGS ichiramba ichiwedzera, ID icharamba ichiwedzera. ID = 0 paVGS = 0V, uye dhiraivha iripo chete mushure meVGS> VGS(th), saka, iyi mhando yeMOSFET inonzi kusimudzira MOSFET.
Hukama hwekutonga hweVGS padhiraivha yazvino inogona kutsanangurwa necurve iD = f(VGS(th))|VDS=const, inodaidzwa kunzi kutamisa hunhu curve, uye ukuru hwemateru ekuchinjisa hunhu curve, gm, inoratidza kutonga kwekudonhedza ikozvino negedhi source voltage. ukuru hwe gm mA/V, saka gm inonziwo transconductance.
Nguva yekutumira: Aug-04-2024
