Kune misiyano yakawanda yezviratidzo zvedunhu zvinowanzoshandiswa kuMOSFETs. Iyo inonyanyozivikanwa dhizaini mutsara wakatwasuka unomiririra gwara, mitsetse miviri perpendicular kune chiteshi inomiririra kunobva uye dhizaini, uye mupfupi mutsetse unofambirana negwara kuruboshwe rinomiririra gedhi. Dzimwe nguva mutsara wakatwasuka unomiririra chiteshi unotsiviwawo nemutsetse wakatyoka kusiyanisa pakati pekusimudzira modhimosfet kana depletion mode mosfet, iyo zvakare yakakamurwa kuita N-channel MOSFET uye P-channel MOSFET marudzi maviri echiratidzo chedunhu sezvakaratidzwa mumufananidzo (kunanga kwemuseve kwakasiyana).
Power MOSFETs inoshanda nenzira mbiri huru:
(1) Kana magetsi akanaka awedzerwa kuD uye S (drain positive, source negative) uye UGS = 0, iyo PN junction munharaunda yeP muviri uye nzvimbo yeN drain inorerekera shure, uye hapana ikozvino inopfuura pakati peD. uye S. Kana simba rakanaka reUGS rawedzerwa pakati peG neS, hapana gedhi remazuva ano richayerera nokuti gedhi rakavharidzirwa, asi magetsi akanaka pagedhi achasundira maburi kure neP nharaunda iri pasi, uye maerekitironi anotakura zvishoma achaita. kukwezvwa kunzvimbo yeP nzvimbo Kana iyo UGS yakakura kupfuura imwe voltage UT, iyo electron concentration iri pamusoro penzvimbo yeP iri pasi pegedhi inodarika iyo gomba, nokudaro ichiita P-type semiconductor antipattern layer N-type semiconductor. ; iyi antipattern layer inoumba N-type chiteshi pakati pechitubu uye dhiraivha, kuitira kuti PN junction inonyangarika, tsime uye dhiraivha conductive, uye dhiraivha ikozvino ID inoyerera nemudhiraini. UT inodaidzwa kunzi turn-on voltage kana chikumbaridzo voltage, uye iyo UGS yakawanda inodarika UT, iyo inoitisa conductive kugona, uye iyo ID yakakura. Iyo yakakura iyo UGS inodarika UT, iyo yakasimba conductivity, iyo yakakura ID.
(2) Kana D, S plus negative voltage (source positive, drain negative), iyo PN junction inorerekera mberi, yakaenzana neyemukati reverse diode (haina kukurumidza kupindura maitiro), ndiko kuti,MOSFET haina reverse blocking kugona, inogona kutorwa seyakapikiswa conduction zvikamu.
By theMOSFET misimboti yekushanda inogona kuoneka, mafambisirwo ayo chete polarity carriers inobatanidzwa mune conductive, inozivikanwawo seunipolar transistor.MOSFET drive inowanzoenderana neiyo magetsi IC uye MOSFET maparamita ekusarudza dunhu rakakodzera, MOSFET inowanzoshandiswa pakuchinja. simba rekupa dhiraivha redunhu. Paunenge uchigadzira magetsi ekuchinja uchishandisa MOSFET, vanhu vazhinji vanofunga nezve-on-resistance, yakanyanya voltage, uye yakanyanya ikozvino yeMOSFET. Zvisinei, vanhu kazhinji chete kufunga zvinhu izvi, kuitira kuti dunhu anogona kushanda zvakanaka, asi haisi yakanaka dhizaini mhinduro. Kuti uwane dhizaini yakadzama, iyo MOSFET inofanirwawo kufunga nezve yayo parameter ruzivo. Kune chaiyo MOSFET, dhiraivha yayo yekutyaira, iyo yepamusoro ikozvino yekubuda kwedhiraivha, nezvimwewo, ichakanganisa kushandura kweMOSFET.
Nguva yekutumira: May-17-2024
