Kusiyana pakati peIGBT neMOSFET

IGBT (Isulated Gate Bipolar Transistor) uye MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) maviri akajairika simba semiconductor midziyo inoshandiswa zvakanyanya mumagetsi emagetsi. Nepo ese ari maviri akakosha zvikamu mumashandisirwo akasiyana siyana, anosiyana zvakanyanya mune akati wandei. Pazasi pane misiyano yekutanga pakati peIGBT neMOSFET:

1. Kushanda Nheyo

- IGBT: IGBT inosanganisa hunhu hweese ari maviri BJT (Bipolar Junction Transistor) uye MOSFET, ichiita iyo yakasanganiswa mudziyo. Iyo inodzora hwaro hweBJT kuburikidza negedhi voltage yeMOSFET, iyo inozodzora iyo BJT's conduction uye cutoff. Kunyangwe iyo conduction uye cutoff maitiro eIGBT akaomarara, anoratidza yakaderera conduction voltage kurasikirwa uye yakakwirira voltage kushivirira.

- MOSFET: MOSFET ndeye munda-effect transistor inodzora ikozvino mune semiconductor kuburikidza negedhi voltage. Kana gedhi regedhi richipfuura iro sosi voltage, conductive layer mafomu, ichibvumira ikozvino kuyerera. Sezvineiwo, kana gedhi voltage iri pazasi pechikumbaridzo, iyo conductive layer inonyangarika, uye ikozvino haigone kuyerera. Kushanda kweMOSFET kuri nyore, nekukurumidza kushandura kumhanya.

2. Nzvimbo dzekushandisa

- IGBT: Nekuda kwekushivirira kwayo kwemagetsi, kuderera kwemagetsi ekudzikira, uye kukurumidza kushandura kuita, IGBT inonyanya kufanirwa nepamusoro-simba, yakaderera-kurasikirwa maapplication akadai semainverters, madhiraivha emota, michina yewelding, uye isingachinjiki magetsi emagetsi (UPS) . Mune aya maapplication, IGBT inonyatso gadzirisa yakakwira-voltage uye yakakwirira-ikozvino switching mashandiro.

- MOSFET: MOSFET, nemhinduro yayo inokurumidza, kupikisa kwepamusoro, kugadzikana kwekuchinja, uye mutengo wakaderera, inoshandiswa zvakanyanya musimba-yakaderera, kukurumidza-kuchinja maapplication akadai sekuchinja-modhi magetsi emagetsi, mwenje, odhiyo amplifiers, uye logic maseketi. . MOSFET inoita zvakanyanya mushe-simba uye yakaderera-voltage application.