Tsananguro yakadzama yeiyo yekushanda musimboti dhizaini yeMOSFET | Kuongororwa kwechimiro chemukati cheFET

MOSFET ndechimwe chezvinhu zvakakosha muindasitiri yesemiconductor. Mumaseketi emagetsi, MOSFET inowanzo shandiswa mumagetsi amplifier maseketi kana kushandura magetsi ekupa maseketi uye inoshandiswa zvakanyanya. Pazasi,OLUKEYichakupa tsananguro yakadzama yemusimboti wekushanda weMOSFET uye ongorora chimiro chemukati cheMOSFET.

ChiiMOSFET

MOSFET, Metal Oxide Semiconductor Filed Effect Transistor (MOSFET). Iyo yemunda mhedzisiro transistor inogona kushandiswa zvakanyanya mumasekete analog uye dhijitari maseketi. Maererano nekusiyana kwepolar ye "channel" (yekushanda mutakuri), inogona kugoverwa mumhando mbiri: "N-type" uye "P-type", iyo inowanzonzi NMOS uye PMOS.

MOSFET kushanda musimboti

MOSFET inogona kukamurwa kuita yekusimudzira mhando uye depletion mhando zvichienderana nekushanda mode. Mhando yekusimudzira inoreva MOSFET kana pasina bias voltage inoiswa uye pasina conductive channel. Rudzi rwekuderera runoreva MOSFET kana pasina bias voltage inoiswa. A conductive channel ichaonekwa.

Mumashandisirwo chaiwo, kune chete N-chiteshi chekusimudzira mhando uye P-channel yekusimudzira mhando MOSFETs. Sezvo maNMOSFET aine diki pa-nyika kuramba uye ari nyore kugadzira, NMOS inowanzojairika kupfuura PMOS mumashandisirwo chaiwo.

Enhancement mode MOSFET

Kune maviri-kumashure-kumashure-kumashure PN majenji pakati pekudonhedza D uye sosi S yeyekusimudzira-modhi MOSFET. Kana gedhi-sosi voltage VGS = 0, kunyangwe iyo drain-source voltage VDS yawedzerwa, panogara paine PN junction mune reverse-biased state, uye hapana conductive chiteshi pakati pekudonhedza uye kunobva (hapana ikozvino inoyerera. ) Naizvozvo, iyo yekudonhedza ikozvino ID=0 panguva ino.

Panguva ino, kana kumberi kwemhepo kunowedzerwa pakati pegedhi uye kunobva. Ndiko kuti, VGS> 0, ipapo munda wemagetsi une gedhi rakabatana neP-mhando silicon substrate ichagadzirwa muSiO2 insulating layer pakati pegedhi electrode uye silicon substrate. Nekuti iyo oxide layer iri insulating, iyo voltage VGS inoshandiswa pagedhi haigone kuburitsa ikozvino. A capacitor inogadzirwa pamativi ese eiyo oxide layer, uye VGS yakaenzana yedunhu inochaja iyi capacitor (capacitor). Uye gadzira munda wemagetsi, sezvo VGS ichisimuka zvishoma nezvishoma, inokwezva neiyo yakanaka voltage yegedhi. Nhamba huru yemaerekitironi inoungana kune rumwe rutivi rweiyi capacitor (capacitor) uye inogadzira N-mhando conductive chiteshi kubva kudhiraini kuenda kutsime. Kana VGS ichidarika kutendeuka-on voltage VT yechubhu (kazhinji ingangoita 2V), iyo N-chiteshi chubhu inongotanga kuitisa, ichigadzira yekudonhedza ikozvino ID. Isu tinodaidza gedhi-sosi voltage kana chiteshi chatanga kuburitsa magetsi ekutendeuka. Kazhinji inoratidzwa seVT.

Kudzora saizi yegedhi voltage VGS inoshandura simba kana kushaya simba kwemunda wemagetsi, uye mhedzisiro yekudzora saizi yekudonhedza ikozvino ID inogona kuwanikwa. Ichi zvakare chinhu chakakosha cheMOSFETs anoshandisa minda yemagetsi kutonga ikozvino, saka ivo vanonziwo field effect transistors.

MOSFET chimiro chemukati

Pane P-mhando silicon substrate ine yakaderera kusvibiswa kusungwa, maviri eN+ matunhu ane yakanyanya kusachena anogadzirwa, uye maelectrode maviri anodhonzwa kunze kwesimbi aruminiyamu kuti ashande sedrain d uye sosi s zvakateerana. Ipapo iyo semiconductor pamusoro yakafukidzwa neyakaonda yakanyanyisa silicon dioxide (SiO2) insulating layer, uye aruminiyamu electrode inoiswa pane insulating layer pakati pemvura uye sosi kuti ishande segedhi g. Electrode B inodhirowewawo kunze kweiyo substrate, ichigadzira N-channel yekusimudzira-modhi MOSFET. Izvi zvakafanana nekugadzirwa kwemukati kweP-channel yekusimudzira-mhando MOSFETs.

N-channel MOSFET uye P-channel MOSFET redunhu zviratidzo

Mufananidzo uri pamusoro unoratidza chiratidzo chedunhu cheMOSFET. Pamufananidzo, D ndiye mugero, S ndiko kunobva, G ndiro gedhi, uye museve uri pakati unomiririra substrate. Kana museve wakananga mukati, unoratidza N-channel MOSFET, uye kana museve wakananga kunze, unoratidza P-channel MOSFET.

Dual N-channel MOSFET, mbiri P-channel MOSFET uye N+P-channel MOSFET matunhu zviratidzo

Muchokwadi, panguva yeMOSFET yekugadzira maitiro, iyo substrate yakabatana kune sosi isati yabva mufekitori. Naizvozvo, mumitemo yechiratidzo, chiratidzo chemuseve chinomiririra substrate inofanirawo kubatanidzwa kune sosi kuti isiyanise dhiri nekwakabva. Iyo polarity yemagetsi inoshandiswa neMOSFET yakafanana neyedu yechinyakare transistor. Iyo N-chiteshi yakafanana neNPN transistor. Drein D inobatanidzwa kune yakanaka electrode uye sosi S yakabatana neiyo negative electrode. Kana gedhi G rine voltage yakanaka, conductive chiteshi inoumbwa uye N-channel MOSFET inotanga kushanda. Saizvozvo, iyo P-channel yakafanana nePNP transistor. Drein D yakabatana neiyo negative electrode, sosi S yakabatana kune yakanaka electrode, uye kana gedhi G rine negative voltage, conductive channel inoumbwa uye P-channel MOSFET inotanga kushanda.

MOSFET inoshandura kurasikirwa musimboti

Ingave iyo NMOS kana PMOS, pane conduction yemukati inopikisa inogadzirwa mushure mekunge yavhurwa, kuitira kuti ikozvino inopedza simba pane iyi yemukati kuramba. Ichi chikamu chesimba rinoshandiswa chinonzi conduction kushandiswa. Kusarudza MOSFET ine diki conduction yemukati kuramba ichanyatso kudzikisa conduction kushandiswa. Ikozvino kupikisa kwemukati kwepasi-simba MOSFETs kunowanzo kutenderedza makumi emamiriyoni, uye kune zvakare akati wandei mamiriyoni.

Kana MOS ikabatidzwa uye ikamiswa, haifanire kuitika nekukasira. Iyo voltage pamativi ese eMOS ichave nekuderera kunoshanda, uye ikozvino inoyerera kuburikidza nayo ichave nekuwedzera. Munguva iyi, kurasikirwa kweMOSFET ndicho chigadzirwa chevoltage uye yazvino, inova kurasikirwa kwekuchinja. Kazhinji kutaura, kurasikirwa kwekuchinja kwakakura kudarika kurasikirwa kweconduction, uye nekukurumidza kuchinjika frequency, ndiko kukura kwekurasikirwa.

Chigadzirwa chemagetsi uye chazvino panguva yekufambisa chakakura kwazvo, zvichikonzera kurasikirwa kukuru. Kuchinja kurasikirwa kunogona kuderedzwa nenzira mbiri. Imwe ndeyekuderedza nguva yekushandura, iyo inogona kunyatsoderedza kurasikirwa panguva imwe neimwe yekutendeuka; imwe yacho ndeyekuderedza kushanduka kwekuchinja, iyo inogona kuderedza nhamba yekuchinja pane imwe nguva yeyuniti.

Iri pamusoro itsananguro yakadzama yedhiyagiramu yemisimboti yekushanda yeMOSFET uye kuongororwa kwechimiro chemukati cheMOSFET. Kuti udzidze zvakawanda nezve MOSFET, unogamuchirwa kubvunza OLUKEY kuti akupe iwe MOSFET tsigiro yehunyanzvi!