WST2088A N-chiteshi 20V 7.5A SOT-23-3L WINSOK MOSFET

WST2088A N-channel 20V 7.5A SOT-23-3L WINSOK MOSFET Featured Image

tsananguro pfupi:

Model Number:WST2088A

BVDSS:20V

RDSON:10.7mΩ

ID:7.5A

Channel:N-chiteshi

Package:SOT-23-3L

Product Summery:Mhepo yeWST2088A MOSFET ndeye 20V, ikozvino 7.5A, kuramba ndeye 10.7mΩ, chiteshi ndiN-channel, uye pasuru ndeye SOT-23-3L.

Applications:Fodya dzemagetsi, zvidzori, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi, nezvimwe.

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Product Detail

Application

Product Tags

General Description

Iyo WST2088A ndiyo yakanyanya kuita mugero N-ch MOSFETs ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye yegedhi kuchaja kune mazhinji emagetsi madiki ekuchinja uye kurodha switch maapplication.Iyo WST2088A inosangana neRoHS neGreen Chigadzirwa chinodiwa nekuvimbika kuzere kwebasa kwakabvumidzwa.

Features

Advanced high cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa Cdv/dt mhedzisiro inoderera, Green Device Inowanikwa

Applications

Simba switching application, Yakaoma Kuchinja uye Yakakwira Frequency Circuits, Isingapindiki Magetsi Supply, Midzanga yemagetsi, zvinodzora, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi, nezvimwe.

nhamba yezvinhu zvinoenderana

AO AO3416, ON NTR3C21NZ, VISHAY Si2312CDS, Nxperian PMV16XN, nezvimwewo.

Zvakakosha parameters

Electrical Characteristics (TJ=25 ℃, kunze kwekunge zvaratidzwa)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gedhi-Mabviro Voltage	±12	V
ID@Tc=25℃	Kunoenderera mberi Drain Current, VGS @ 4.5V	7.5	A
ID@Tc=70℃	Kunoenderera mberi Drain Current, VGS @ 4.5V	4.5	A
IDP	Pulsed Drain Current	24	A
PD@TA=25℃	Total Power Dissipation	1.25	W
TSTG	Storage Temperature Range	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃, ID = 1mA	---	0.018	---	V/℃
RDS(V)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=6A	---	10.7	14	mΩ
RDS(V)	Static Drain-Source On-Resistance2					mΩ
		VGS=2.5V , ID=5A	---	12.8	17
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.4	0.63	1.2	V
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V.	---	---	10	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±12V , VDS=0V	---	---	±100	nA
Qg	Total Gate Charge	VDS=15V , VGS=4.5V , ID=6A	---	10	---	nC
Qgs	Gate-Source Charge		---	1.6	---
Qgd	Gate-Drain Charge		---	3.4	---
Td(pa)	Batidza Kunonoka Nguva	VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A	---	8	---	ns
Tr	Rise Time		---	15	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	33	---
Tf	Nguva Yekudonha		---	13	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	590	---	pF
Coss	Output Capacitance		---	125	---
Crss	Reverse Transfer Capacitance		---	90	---