WST2088 N-chiteshi 20V 8.8A SOT-23-3L WINSOK MOSFET

WST2088 N-channel 20V 8.8A SOT-23-3L WINSOK MOSFET Featured Image

tsananguro pfupi:

Model Number:WST2088

BVDSS:20V

RDSON:8mΩ

ID:8.8A

Channel:N-chiteshi

Package:SOT-23-3L

Product Summery:Iyo voltage yeWST2088 MOSFET ndeye 20V, ikozvino i8.8A, kuramba ndeye 8mΩ, chiteshi iN-channel, uye pasuru ndeyeSOT-23-3L.

Applications:Fodya dzemagetsi, zvidzori, midziyo yedhijitari, midziyo midiki yemumba, uye zvemagetsi zvevatengi.

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Product Detail

Application

Product Tags

General Description

Iwo maWST2088 MOSFETs ndiwo akanyanya kukwirira N-chiteshi transistors pamusika.Ivo vane inoshamisa yakakwira sero density, izvo zvinoguma zvakanakisa RDSON uye gedhi kubhadharisa.Aya maMOSFET akakwana kune diki magetsi switching uye load switch application.Ivo vanosangana neRoHS uye Green Chigadzirwa zvinodiwa uye vakaedzwa zvizere kuvimbika.

Features

Advanced Trench tekinoroji ine high cell density, Super Low Gate Charge, uye yakanakisa Cdv/dt mhedzisiro inodzikira, ichiiita Green Device.

Applications

Mashandisirwo emagetsi, maseketi ane kuomarara kuchinjika uye yakakwirira frequency, isina kukanganiswa magetsi, e-fodya, controller, midziyo yemagetsi, midziyo midiki yemumba, uye zvemagetsi zvevatengi.

nhamba yezvinhu zvinoenderana

AO AO3416, DINTEK DTS2300A DTS2318 DTS2314 DTS2316 DTS2322 DTS3214, nezvimwewo.

Zvakakosha parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gedhi-Mabviro Voltage	±12	V
ID@Tc=25℃	Kunoenderera mberi Drain Current, VGS @ 4.5V	8.8	A
ID@Tc=70℃	Kunoenderera mberi Drain Current, VGS @ 4.5V	6.2	A
IDP	Pulsed Drain Current	40	A
PD@TA=25℃	Total Power Dissipation	1.5	W
TSTG	Storage Temperature Range	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	℃

Electrical Characteristics (TJ=25 ℃, kunze kwekunge zvaratidzwa)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V, ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃, ID = 1mA	---	0.018	---	V/℃
RDS(V)	Static Drain-Source On-Resistance2	VGS=4.5V, ID=6A	---	8	13	mΩ
RDS(V)	Static Drain-Source On-Resistance2	VGS=2.5V, ID=5A	---	10	19	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.5	---	1.3	V
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V.	---	---	10	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±12V , VDS=0V	---	---	±100	nA
Qg	Total Gate Charge	VDS=15V , VGS=4.5V , ID=6A	---	16	---	nC
Qgs	Gate-Source Charge		---	3	---
Qgd	Gate-Drain Charge		---	4.5	---
Td(pa)	Batidza Kunonoka Nguva	VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A	---	10	---	ns
Tr	Rise Time		---	13	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	28	---
Tf	Nguva Yekudonha		---	7	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	1400	---	pF
Coss	Output Capacitance		---	170	---
Crss	Reverse Transfer Capacitance		---	135	---