WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET

tsananguro pfupi:

Model Number:WST2078

BVDSS:20V/-20V

RDSON:45mΩ/65mΩ

ID:3.8A/-4.5A

Channel:N&P Channel

Package:SOT-23-6L

Product Summery:Iyo WST2078 MOSFET ine voltage ratings ye20V uye -20V.Inokwanisa kubata macurrents e3.8A uye -4.5A, uye ine nhanho dzekupokana dze45mΩ uye 65mΩ.Iyo MOSFET ine zvese N&P Channel kugona uye inouya mune SOT-23-6L package.

Applications:E-fodya, zvidzori, zvigadzirwa zvedhijitari, midziyo, uye zvemagetsi zvevatengi.

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Product Detail

Application

Product Tags

General Description

Iyo WST2078 ndiyo yakanakisa MOSFET yediki magetsi switch uye kurodha maapplication.Iyo ine yakakwira sero density inopa yakanakisa RDSON uye gedhi kubhadharisa.Iyo inosangana neRoHS uye Green Chigadzirwa zvinodiwa uye yakatenderwa kuti izere basa rakavimbika.

Features

Tekinoroji yepamusoro ine migero yakakwira masero, kubhadharisa gedhi rakaderera zvakanyanya, uye kudzikisira kwakanyanya kweCDv/dt mhedzisiro.Chigadzirwa ichi zvakare chinoenderana nenharaunda.

Applications

High-frequency point-of-load synchronous small power switching yakanakira kushandiswa muMB/NB/UMPC/VGA, networking DC-DC power systems, load switch, e-fodya, controller, zvigadzirwa zvedhijitari, midziyo midiki yemumba, uye vatengi. zvemagetsi.

nhamba yezvinhu zvinoenderana

AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.

Zvakakosha parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	N-Channel	P-Channel	Units
VDS	Drain-Source Voltage	20	-20	V
VGS	Gedhi-Mabviro Voltage	±12	±12	V
ID@Tc=25℃	Inoramba ichidonhedza Zvazvino, VGS @ 4.5V1	3.8	-4.5	A
ID@Tc=70℃	Inoramba ichidonhedza Zvazvino, VGS @ 4.5V1	2.8	-2.6	A
IDM	Pulsed Drain Current2	20	-13	A
PD@TA=25℃	Total Power Dissipation3	1.4	1.4	W
TSTG	Storage Temperature Range	-55 kusvika ku150	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	-55 kusvika ku150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃ , ID = 1mA	---	0.024	---	V/℃
RDS(V)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=3A	---	45	55	mΩ
		VGS=2.5V , ID=1A	---	60	80
		VGS=1.8V , ID=1A	---	85	120
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.5	0.7	1	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-2.51	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±8V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=5V , ID=1A	---	8	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	2.5	3.5	Ω
Qg	Yese Gedhi Charge (4.5V)	VDS=10V , VGS=10V , ID=3A	---	7.8	---	nC
Qgs	Gate-Source Charge		---	1.5	---
Qgd	Gate-Drain Charge		---	2.1	---
Td(pa)	Batidza Kunonoka Nguva	VDD=10V , VGEN=4.5V , RG=6Ω ID=3A RL=10Ω	---	2.4	4.3	ns
Tr	Rise Time		---	13	23
Td(kudzima)	Kudzima Kunonoka Nguva		---	15	28
Tf	Nguva Yekudonha		---	3	5.5
Ciss	Input Capacitance	VDS=10V , VGS=0V , f=1MHz	---	450	---	pF
Coss	Output Capacitance		---	51	---
Crss	Reverse Transfer Capacitance		---	52	---