WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
General Description
Iwo maWST2011 MOSFETs ndiwo akanyanya kukwirisa P-ch transistors aripo, ane unrivaled cell density.Ivo vanopa kuita kwakasarudzika, ine yakaderera RDSON uye gedhi kubhadharisa, zvichiita kuti ive yakanakira diki simba rekuchinja uye kurodha switch maapplication.Uyezve, iyo WST2011 inosangana neRoHS uye Green Chigadzirwa zviyero uye inozvirumbidza yakazara-basa rekuvimbika mvumo.
Features
Advanced Trench tekinoroji inobvumira kukwira kwesero density, zvichikonzera Green Device ine Super Low Gate Charge uye yakanakisa CdV/dt mhedzisiro inodzikira.
Applications
High frequency point-of-load synchronous small power switching inokodzera kushandiswa muMB/NB/UMPC/VGA, networking DC-DC power systems, load switch, e-fodya, controller, zvigadzirwa zvemadhijitari, midziyo midiki yemumba, nemagetsi evatengi. .
nhamba yezvinhu zvinoenderana
ON FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,
Zvakakosha parameters
| Symbol | Parameter | Rating | Units | |
| 10s | steady State | |||
| VDS | Drain-Source Voltage | -20 | V | |
| VGS | Gedhi-Mabviro Voltage | ±12 | V | |
| ID@TA=25℃ | Kuenderera mberi Drain Current, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | Kuenderera mberi Drain Current, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Pulsed Drain Current2 | -12 | A | |
| PD@TA=25℃ | Total Power Dissipation3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Total Power Dissipation3 | 1.2 | 0.9 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ | |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ | |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V , ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference kune 25 ℃ , ID = -1mA | --- | -0.011 | --- | V/℃ |
| RDS(V) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V , ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.5 | -1.0 | -1.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | 3.95 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-16V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=-5V , ID=-2A | --- | 8.5 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V , VGS=-4.5V , ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Gate-Source Charge | --- | 1.1 | 1.7 | ||
| Qgd | Gate-Drain Charge | --- | 1.1 | 2.9 | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=-15V , VGS=-4.5V , RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Rise Time | --- | 9.3 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 15.4 | --- | ||
| Tf | Nguva Yekudonha | --- | 3.6 | --- | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 750 | --- | pF |
| Coss | Output Capacitance | --- | 95 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 68 | --- |
