WSR200N08 N-chiteshi 80V 200A TO-220-3L WINSOK MOSFET

WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET Featured Image

tsananguro pfupi:

Model Number:WSR200N08

BVDSS:80V

RDSON:2.9mΩ

ID:200A

Channel:N-chiteshi

Package:TO-220-3L

Product Summery:Iyo WSR200N08 MOSFET inokwanisa kubata anosvika makumi masere volts uye mazana maviri amps nekupokana kwe2.9 miriyoni. Iyo iN-channel mudziyo uye inouya mune TO-220-3L package.

Applications:Midzanga yemagetsi, machaja asina waya, mota, mabhatiri ekutonga masisitimu, magetsi ekuchengetedza magetsi, mota dzemuchadenga dzisina kufambiswa, zvishandiso zvehutano, midziyo yekuchaja mota yemagetsi, mayuniti ekudzora, michina yekudhinda ye3D, midziyo yemagetsi, midziyo midiki yemumba, uye zvemagetsi zvevatengi.

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Product Detail

Application

Product Tags

General Description

Iyo WSR200N08 ndiyo yepamusoro-soro yekuita mugero N-Ch MOSFET ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye gedhi kubhadharisa kune akawanda esynchronous buck converter application. Iyo WSR200N08 inosangana neRoHS uye Green Chigadzirwa chinodiwa, 100% EAS inovimbiswa nekuvimbika kwesero kwekushanda kwakabvumidzwa.

Features

Advanced high cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa CdV/dt mhedzisiro inodzikira, 100% EAS Yakavimbiswa, Green Device Inowanikwa.

Applications

Shandura application, Power Management yeInverter Systems, Electronic midzanga, isina waya yekuchaja, mota, BMS, magetsi ekukurumidzira, drones, zvekurapa, kuchaja mota, controller, 3D maprinta, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi, nezvimwe.

nhamba yezvinhu zvinoenderana

AO AOT480L, ON FDP032N08B,ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, nezvimwewo.

Zvakakosha parameters

Electrical Characteristics (TJ=25℃, kunze kwekunge zvaratidzwa)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	80	V
VGS	Gedhi-Mabviro Voltage	±25	V
ID@TC=25℃	Kunoenderera mberi Drain Current, VGS @ 10V1	200	A
ID@TC=100℃	Kunoenderera mberi Drain Current, VGS @ 10V1	144	A
IDM	Pulsed Drain Current2,TC=25°C	790	A
EAS	Avalanche Energy, Single pulse,L=0.5mH	1496	mJ
IAS	Avalanche Yazvino, Kurova kamwe chete,L=0.5mH	200	A
PD@TC=25℃	Total Power Dissipation4	345	W
PD@TC=100℃	Total Power Dissipation4	173	W
TSTG	Storage Temperature Range	-55 kusvika 175	℃
TJ	Operating Junction Temperature Range	175	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	80	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃, ID = 1mA	---	0.096	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V,ID=100A	---	2.9	3.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=80V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=80V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	3.2	---	Ω
Qg	Total Gate Charge (10V)	VDS=80V , VGS=10V , ID=30A	---	197	---	nC
Qgs	Gate-Source Charge		---	31	---
Qgd	Gate-Drain Charge		---	75	---
Td(pa)	Batidza Kunonoka Nguva	VDD=50V , VGS=10V ,RG=3Ω, ID=30A	---	28	---	ns
Tr	Rise Time		---	18	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	42	---
Tf	Nguva Yekudonha		---	54	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	8154	---	pF
Coss	Output Capacitance		---	1029	---
Crss	Reverse Transfer Capacitance		---	650	---