WSR140N12 N-chiteshi 120V 140A TO-220-3L WINSOK MOSFET

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WSR140N12 N-chiteshi 120V 140A TO-220-3L WINSOK MOSFET

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  • Model Number:WSR140N12
  • BVDSS:120V
  • RDSON:5mΩ
  • ID:140A
  • Channel:N-chiteshi
  • Package:TO-220-3L
  • Product Summery:Iyo voltage yeWSR140N12 MOSFET ndeye 120V, ikozvino i140A, kuramba ndeye 5mΩ, chiteshi ndiN-channel, uye package ndeye TO-220-3L.
  • Applications:Magetsi, zvekurapa, midziyo mikuru, BMS nezvimwe.
  • Product Detail

    Application

    Product Tags

    General Description

    Iyo WSR140N12 ndiyo yepamusoro-soro yekuita mugero N-ch MOSFET ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye gedhi kubhadharisa kune akawanda einopindirana buck converter application. Iyo WSR140N12 inosangana neRoHS uye Green Chigadzirwa chinodiwa, 100% EAS yakavimbiswa nekuvimbika kuzere kwebasa kwakabvumidzwa.

    Features

    Advanced high cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa CdV/dt effect yadzikira, 100% EAS Guaranteed, Green Device Inowanikwa.

    Applications

    High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Magetsi, mishonga, midziyo mikuru, BMS nezvimwewo.

    nhamba yezvinhu zvinoenderana

    STP40NF12 nezvimwe.

    Zvakakosha parameters

    Symbol Parameter Rating Units
    VDS Drain-Source Voltage 120 V
    VGS Gedhi-Mabviro Voltage ±20 V
    ID Inoramba ichidonhedza Parizvino, VGS @ 10V(TC=25℃) 140 A
    IDM Pulsed Drain Current 330 A
    EAS Imwe Pulse Avalanche Energy 400 mJ
    PD Total Power Dissipation... C=25℃) 192 W
    RθJA Thermal resistance, junction-ambient 62 ℃/W
    RθJC Thermal resistance, junction-case 0.65 ℃/W
    TSTG Storage Temperature Range -55 kusvika ku150
    TJ Operating Junction Temperature Range -55 kusvika ku150
    Symbol Parameter Conditions Min. Typ. Max. Unit
    BVDSS Drain-Source Kuputsa Voltage VGS=0V , ID=250uA 120 --- --- V
    RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=30A --- 5.0 6.5
    VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.0 --- 4.0 V
    IDSS Drain-Source Leakage Current VDS=120V , VGS=0V , TJ=25℃ --- --- 1 uA
    IGSS Gedhi-Mabviro Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
    Qg Total Gate Charge VDS=50V , VGS=10V , ID=15A --- 68.9 --- nC
    Qgs Gate-Source Charge --- 18.1 ---
    Qgd Gate-Drain Charge --- 15.9 ---
    Td(pa) Batidza Kunonoka Nguva VDD=50V , VGS=10VRG=2Ω,ID=25A --- 30.3 --- ns
    Tr Rise Time --- 33.0 ---
    Td(kudzima) Kudzima Kunonoka Nguva --- 59.5 ---
    Tf Nguva Yekudonha --- 11.7 ---
    Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 5823 --- pF
    Coss Output Capacitance --- 778.3 ---
    Crss Reverse Transfer Capacitance --- 17.5 ---

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