WSR140N12 N-chiteshi 120V 140A TO-220-3L WINSOK MOSFET

tsananguro pfupi:

Model Number:WSR140N12

BVDSS:120V

RDSON:5mΩ

ID:140A

Channel:N-chiteshi

Package:TO-220-3L

Product Summery:Iyo voltage yeWSR140N12 MOSFET ndeye 120V, ikozvino i140A, kuramba ndeye 5mΩ, chiteshi ndiN-channel, uye package ndeye TO-220-3L.

Applications:Magetsi, zvekurapa, midziyo mikuru, BMS nezvimwe.

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Product Detail

Application

Product Tags

General Description

Iyo WSR140N12 ndiyo yepamusoro-soro yekuita mugero N-ch MOSFET ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye yegedhi kubhadharisa kune akawanda einopindirana buck converter application. Iyo WSR140N12 inosangana neRoHS uye Green Chigadzirwa chinodiwa, 100% EAS yakavimbiswa nekuvimbika kuzere kwebasa kwakabvumidzwa.

Features

Advanced high cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa CdV/dt effect yadzikira, 100% EAS Guaranteed, Green Device Inowanikwa.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Magetsi, mishonga, midziyo mikuru, BMS nezvimwe.

nhamba yezvinhu zvinoenderana

STP40NF12 nezvimwe.

Zvakakosha parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	120	V
VGS	Gedhi-Mabviro Voltage	±20	V
ID	Inoramba ichidonhedza Parizvino, VGS @ 10V(TC=25℃)	140	A
IDM	Pulsed Drain Current	330	A
EAS	Imwe Pulse Avalanche Energy	400	mJ
PD	Total Power Dissipation... C=25℃)	192	W
RθJA	Thermal resistance, junction-ambient	62	℃/W
RθJC	Thermal resistance, junction-case	0.65	℃/W
TSTG	Storage Temperature Range	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	120	---	---	V
RDS(V)	Static Drain-Source On-Resistance2	VGS=10V , ID=30A	---	5.0	6.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	---	4.0	V
IDSS	Drain-Source Leakage Current	VDS=120V , VGS=0V , TJ=25℃	---	---	1	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
Qg	Total Gate Charge	VDS=50V , VGS=10V , ID=15A	---	68.9	---	nC
Qgs	Gate-Source Charge		---	18.1	---
Qgd	Gate-Drain Charge		---	15.9	---
Td(pa)	Batidza Kunonoka Nguva	VDD=50V , VGS=10VRG=2Ω,ID=25A	---	30.3	---	ns
Tr	Rise Time		---	33.0	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	59.5	---
Tf	Nguva Yekudonha		---	11.7	---
Ciss	Input Capacitance	VDS=50V , VGS=0V , f=1MHz	---	5823	---	pF
Coss	Output Capacitance		---	778.3	---
Crss	Reverse Transfer Capacitance		---	17.5	---