WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET

tsananguro pfupi:

Model Number:WSP4447

BVDSS:-40V

RDSON:13mΩ

ID:-11A

Channel:P-Channel

Package:SOP-8

Product Summery:Mhepo yeWSP4447 MOSFET ndeye -40V, ikozvino -11A, kuramba ndeye 13mΩ, chiteshi iP-Channel, uye pasuru ndeyeSOP-8.

Applications:Fodya dzemagetsi, machaja asina waya, mota, zvidhori, midziyo yekurapa, machaja emotokari, ma controller, zvigadzirwa zvedhijitari, midziyo midiki, nemagetsi evatengi.

Tumira email kwatiri PDF

Product Detail

Application

Product Tags

General Description

Iyo WSP4447 iMOSFET inoita yepamusoro-soro inoshandisa tekinoroji yemugero uye ine hukuru hwesero density.Iyo inopa yakanakisa RDSON uye yekuchaja gedhi, ichiita kuti ive yakakodzera kushandiswa mune yakawanda synchronous buck converter application.Iyo WSP4447 inosangana neRoHS uye Green Chigadzirwa zviyero, uye inouya ne100% EAS vimbiso yekuvimbika kuzere.

Features

Advanced Trench tekinoroji inobvumira kukwira kwesero density, zvichikonzera Green Device ine Super Low Gate Charge uye yakanakisa CdV/dt mhedzisiro inodzikira.

Applications

High Frequency Converter yeMagetsi akasiyana-siyana
Ichi chinoshandura chakagadzirwa kuti chigone kugonesa zvakasiyana siyana zvemidziyo, zvinosanganisira malaptops, mitambo yekutamba, networking midziyo, e-fodya, isina waya charger, mota, drones, mishonga yekurapa, majaja emota, controller, zvigadzirwa zvedhijitari, midziyo midiki yemumba, uye vatengi. zvemagetsi.

nhamba yezvinhu zvinoenderana

AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421，Sinopower SM4403PSK，RUICHIPS RU40L10H.

Zvakakosha parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-40	V
VGS	Gedhi-Mabviro Voltage	±20	V
ID@TA=25℃	Kuenderera mberi Drain Current, VGS @ -10V1	-11	A
ID@TA=70℃	Kuenderera mberi Drain Current, VGS @ -10V1	-9.0	A
IDM a	300µs Pulsed Drain Current (VGS=-10V)	-44	A
EAS b	Avalanche Energy, Single pulse (L=0.1mH)	54	mJ
IAS b	Avalanche Yazvino, Kamwe kupomba (L=0.1mH)	-33	A
PD@TA=25℃	Total Power Dissipation4	2.0	W
TSTG	Storage Temperature Range	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃ , ID = -1mA	---	-0.018	---	V/℃
RDS(V)	Static Drain-Source On-Resistance2	VGS=-10V , ID=-13A	---	13	16	mΩ
RDS(V)	Static Drain-Source On-Resistance2					mΩ
		VGS=-4.5V , ID=-5A	---	18	26
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-1.4	-1.9	-2.4	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Temperature Coefficient		---	5.04	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-32V , VGS=0V , TJ=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-32V , VGS=0V , TJ=55℃	---	---	-5
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=-5V , ID=-10A	---	18	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-20V , VGS=-10V , ID=-11A	---	32	---	nC
Qgs	Gate-Source Charge		---	5.2	---
Qgd	Gate-Drain Charge		---	8	---
Td(pa)	Batidza Kunonoka Nguva	VDD=-20V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω	---	14	---	ns
Tr	Rise Time		---	12	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	41	---
Tf	Nguva Yekudonha		---	22	---
Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz	---	1500	---	pF
Coss	Output Capacitance		---	235	---
Crss	Reverse Transfer Capacitance		---	180	---