WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET
General Description
Iyo WSP4099 igoronga rine simba P-ch MOSFET ine yakakwira sero density.Iyo inopa yakanakisa RDSON uye yegedhi kubhadharisa, ichiita kuti ive yakakodzera kune yakawanda synchronous buck converter application.Iyo inosangana neRoHS uye GreenProduct zviyero uye ine 100% EAS garandi ine yakazara basa rakavimbika mvumo.
Features
Advanced Trench Technology ine high cell density, Ultra-yakaderera gedhi charge, yakanakisa CdV/dt mhedzisiro yekuora uye 100% EAS garandi zvese zvikamu zvemidziyo yedu yakasvibirira inowanikwa nyore.
Applications
High Frequency Point-of-Load Synchronous Buck Converter yeMB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-fodya, kuchaja pasina wire, motors, drones, kurapwa, charger dzemota, controller, zvigadzirwa zvedhijitari. , midziyo midiki yemumba, uye zvemagetsi zvevatengi.
nhamba yezvinhu zvinoenderana
ON FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A，Sinopower SM4405BSK,dintek DTM4807 ,ruichips RU40S4H.
Zvakakosha parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | -40 | V |
| VGS | Gedhi-Mabviro Voltage | ±20 | V |
| ID@TC=25℃ | Kuenderera mberi Drain Current, -VGS @ -10V1 | -6.5 | A |
| ID@TC=100℃ | Kuenderera mberi Drain Current, -VGS @ -10V1 | -4.5 | A |
| IDM | Pulsed Drain Current2 | -22 | A |
| EAS | Imwe Pulse Avalanche Energy3 | 25 | mJ |
| IAS | Avalanche Current | -10 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 2.0 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V , ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference kune 25 ℃ , ID = -1mA | --- | -0.02 | --- | V/℃ |
| RDS(V) | Static Drain-Source On-Resistance2 | VGS=-10V , ID=-6.5A | --- | 30 | 38 | mΩ |
| VGS=-4.5V , ID=-4.5A | --- | 46 | 62 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -1.5 | -2.0 | -2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | 3.72 | --- | V/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=-32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=-5V , ID=-4A | --- | 8 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V , VGS=-4.5V , ID=-6.5A | --- | 7.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.4 | --- | ||
| Qgd | Gate-Drain Charge | --- | 3.5 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=-15V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω | --- | 8.7 | --- | ns |
| Tr | Rise Time | --- | 7 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 31 | --- | ||
| Tf | Nguva Yekudonha | --- | 17 | --- | ||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , f=1MHz | --- | 668 | --- | pF |
| Coss | Output Capacitance | --- | 98 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 72 | --- |
