WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET

tsananguro pfupi:

Model Number:WSP4099

BVDSS:-40V

RDSON:30mΩ

ID:-6.5A

Channel:Dual P-Channel

Package:SOP-8

Product Summery:Iyo WSP4099 MOSFET ine voltage ye -40V, ikozvino ye -6.5A, kuramba kwe30mΩ, Dual P-Channel, uye inouya muSOP-8 package.

Applications:Midzanga yemagetsi, kuchaja isina waya, mota, zvidhori, zvekurapa, machaja emotokari, ma controller, zvigadzirwa zvedhijitari, midziyo midiki, magetsi evatengi.

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Product Detail

Application

Product Tags

General Description

Iyo WSP4099 igoronga rine simba P-ch MOSFET ine yakakwira sero density. Iyo inopa yakanakisa RDSON uye yegedhi kubhadharisa, ichiita kuti ive yakakodzera kune yakawanda synchronous buck converter application. Iyo inosangana neRoHS uye GreenProduct zviyero uye ine 100% EAS garandi ine yakazara basa rakavimbika mvumo.

Features

Advanced Trench Technology ine high cell density, Ultra-yakaderera gedhi kuchaji, yakanakisa CdV/dt mhedzisiro yekuora uye 100% EAS garandi zvese zvikamu zvemidziyo yedu yakasvibirira inowanikwa nyore.

Applications

High Frequency Point-of-Load Synchronous Buck Converter yeMB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-fodya, kuchaja pasina wire, motors, drones, kurapwa, charger dzemota, controller, zvigadzirwa zvedhijitari. , midziyo midiki yemumba, uye zvemagetsi zvevatengi.

nhamba yezvinhu zvinoenderana

ON FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A，Sinopower SM4405BSK,dintek DTM4807 ,ruichips RU40S4H.

Zvakakosha parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-40	V
VGS	Gedhi-Mabviro Voltage	±20	V
ID@TC=25℃	Kuenderera mberi Drain Current, -VGS @ -10V1	-6.5	A
ID@TC=100℃	Kuenderera mberi Drain Current, -VGS @ -10V1	-4.5	A
IDM	Pulsed Drain Current2	-22	A
EAS	Imwe Pulse Avalanche Energy3	25	mJ
IAS	Avalanche Current	-10	A
PD@TC=25℃	Total Power Dissipation4	2.0	W
TSTG	Storage Temperature Range	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃ , ID = -1mA	---	-0.02	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-10V , ID=-6.5A	---	30	38	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-4.5A	---	46	62	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-1.5	-2.0	-2.5	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =-250uA	---	3.72	---	V/℃
IDSS	Drain-Source Leakage Current	VDS=-32V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=-32V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=-5V , ID=-4A	---	8	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-20V , VGS=-4.5V , ID=-6.5A	---	7.5	---	nC
Qgs	Gate-Source Charge		---	2.4	---
Qgd	Gate-Drain Charge		---	3.5	---
Td(pa)	Batidza Kunonoka Nguva	VDD=-15V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω	---	8.7	---	ns
Tr	Rise Time		---	7	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	31	---
Tf	Nguva Yekudonha		---	17	---
Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz	---	668	---	pF
Coss	Output Capacitance		---	98	---
Crss	Reverse Transfer Capacitance		---	72	---