WSP4088 N-chiteshi 40V 11A SOP-8 WINSOK MOSFET

WSP4088 N-channel 40V 11A SOP-8 WINSOK MOSFET Featured Image

tsananguro pfupi:

Model Number:WSP4088

BVDSS:40V

RDSON:13mΩ

ID:11A

Channel:N-chiteshi

Package:SOP-8

Product Summery:Iyo voltage yeWSP4088 MOSFET ndeye 40V, ikozvino i11A, kuramba ndeye 13mΩ, chiteshi iN-channel, uye pasuru ndeyeSOP-8.

Applications:Fodya dzemagetsi, kuchaja pasina waya, mota, zvidhori, zvekurapa, kuchaja mota, zvidzori, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi, nezvimwe.

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Product Detail

Application

Product Tags

General Description

Iyo WSP4088 ndiyo yakanyanya kuita mugero N-chiteshi MOSFET ine yakakwira zvakanyanya sero density inopa yakanakisa RDSON uye gedhi kubhadharisa kune akawanda synchronous buck converter application.WSP4088 inopindirana neRoHS uye zvakasvibirira chigadzirwa zvinodiwa, 100% EAS garandi, yakazara basa kuvimbika kwakabvumidzwa.

Features

Yakavimbika uye Yakarukwa, Inotungamira Yemahara uye Green Zvishandiso Inowanikwa

Applications

Power Management muDesktop Computer kana DC/DC Converters,fodya yemagetsi, kuchaja isina waya, mota, drones, zvekurapa, kuchaja mota, controller, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi, nezvimwe.

nhamba yezvinhu zvinoenderana

AO AO4884 AO4882,ON FDS4672A,PANJIT PJL9424,DINTEK DTM4916 etc.

Zvakakosha parameters

Absolute Maximum Ratings (TA = 25 C Kutoti Zvimwe Zvaonekwa)

Symbol	Parameter		Rating	Unit
Common Ratings
VDSS	Drain-Source Voltage		40	V
VGSS	Gedhi-Mabviro Voltage		±20	V
TJ	Maximum Junction Temperature		150	°C
TSTG	Storage Temperature Range		-55 kusvika ku150	°C
IS	Diode Inoenderera Mberi Yazvino	TA=25°C	2	A
ID	Continuous Drain Current	TA=25°C	11	A
ID	Continuous Drain Current	TA=70°C	8.4
IDM a	Pulsed Drain Current	TA=25°C	30
PD	Maximum Power Dissipation	TA=25°C	2.08	W
PD	Maximum Power Dissipation	TA=70°C	1.3	W
RqJA	Thermal Resistance-Junction kune Ambient	t £10s	30	°C/W
RqJA	Thermal Resistance-Junction kune Ambient	steady State	60
RqJL	Thermal Resistance-Junction to Lead	steady State	20
IAS b	Avalanche Yazvino, Single pulse	L=0.1mH	23	A
EAS b	Avalanche Energy, Single pulse	L=0.1mH	26	mJ

Cherechedza a:Max.ikozvino inogumira nekubatanidza waya.
Cherechedza b:UIS yakaedzwa uye pulse width inogumira nepamusoro pejojo tembiricha 150oC (tembiricha yekutanga Tj=25oC).

Electrical Characteristics (TA = 25 C Kunze kwekunge Zvaonekwa)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Zero Gedhi Voltage Drain Current	VDS=32V, VGS=0V		-	-	1	mA
IDSS	Zero Gedhi Voltage Drain Current		TJ=85°C	-	-	30	mA
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=250mA		1.5	1.8	2.5	V
IGSS	Gate Leakage Current	VGS=±20V, VDS=0V		-	-	±100	nA
RDS(ON) c	Drain-Source On-state Resistance	VGS=10V, IDS=7A		-	10.5	13	mW
			TJ=125°C	-	15.75	-
		VGS=4.5V, IDS=5A		-	12	16
Gfs	Pamberi Transconductance	VDS=5V, IDS=15A		-	31	-	S
Diode Characteristics
VSD c	Diode Forward Voltage	ISD=10A, VGS=0V		-	0.9	1.1	V
trr	Reverse Recovery Time	VDD=20V,ISD=10A, dlSD/dt=100A/ms		-	15.2	-	ns
ta	Charge Time			-	9.4	-
tb	Discharge Time			-	5.8	-
Qrr	Reverse Recovery Charge			-	9.5	-	nC
Dynamic Hunhu d
RG	Gate Resistance	VGS=0V,VDS=0V,F=1MHz		0.7	1.1	1.8	W
Ciss	Input Capacitance	VGS=0V,VDS=20V,Frequency=1.0MHz		-	1125	-	pF
Coss	Output Capacitance			-	132	-
Crss	Reverse Transfer Capacitance			-	70	-
td(ON)	Batidza Kunonoka Nguva	VDD=20V, RL=20W,IDS=1A, VGEN=10V, RG=1W		-	12.6	-	ns
tr	Batidza Rise Nguva			-	10	-
td(OFF)	Kudzima Kunonoka Nguva			-	23.6	-
tf	Turn-off Fall Time			-	6	-
Gate Charge Hunhu d
Qg	Total Gate Charge	VDS=20V, VGS=4.5V, IDS=7A		-	9.4	-	nC
Qg	Total Gate Charge	VDS=20V, VGS=10V, IDS=7A		-	20	28
Qgth	Threshold Gate Charge			-	2	-
Qgs	Gate-Source Charge			-	3.9	-
Qgd	Gate-Drain Charge			-	3	-