WSP4016 N-chiteshi 40V 15.5A SOP-8 WINSOK MOSFET

WSP4016 N-channel 40V 15.5A SOP-8 WINSOK MOSFET Featured Image

tsananguro pfupi:

Model Number:WSP4016

BVDSS:40V

RDSON:11.5mΩ

ID:15.5A

Channel:N-chiteshi

Package:SOP-8

Product Summery:Iyo voltage yeWSP4016 MOSFET ndeye 40V, ikozvino i15.5A, kuramba ndeye 11.5mΩ, chiteshi iN-channel, uye pasuru ndeyeSOP-8.

Applications:Zvemagetsi zvemotokari, marambi eLED, odhiyo, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi, mabhodhi ekudzivirira, nezvimwe.

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Product Detail

Application

Product Tags

General Description

Iyo WSP4016 ndiyo yepamusoro-soro yekuita mugero N-ch MOSFET ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye machaji egedhi kune akawanda esynchronous buck converter application. Iyo WSP4016 inosangana neRoHS neGreen Chigadzirwa chinodiwa, 100% EAS inovimbiswa nekuvimbika kuzere kwebasa kwakabvumidzwa.

Features

Yepamberi yakakwira cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa CdV/dt mhedzisiro inodzikira, 100% EAS Yakavimbiswa, Green Device Inowanikwa.

Applications

White LED boost converters,Mota dzeMotokari,Industrial DC/DC Conversion Circuits, EAutomotive zvemagetsi, mwenje weLED, odhiyo, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi, mabhodhi ekudzivirira, nezvimwe.

nhamba yezvinhu zvinoenderana

AO AOSP66406, ON FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.

Zvakakosha parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	40	V
VGS	Gedhi-Mabviro Voltage	±20	V
ID@TC=25℃	Kunoenderera mberi Drain Current, VGS @ 10V1	15.5	A
ID@TC=70℃	Kunoenderera mberi Drain Current, VGS @ 10V1	8.4	A
IDM	Pulsed Drain Current2	30	A
PD@TA=25℃	Total Power Dissipation TA=25°C	2.08	W
PD@TA=70℃	Total Power Dissipation TA=70°C	1.3	W
TSTG	Storage Temperature Range	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	℃

Electrical Characteristics (TJ=25 ℃, kunze kwekunge zvaratidzwa)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	40	---	---	V
RDS(V)	Static Drain-Source On-Resistance2	VGS=10V , ID=7A	---	8.5	11.5	mΩ
RDS(V)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=5A	---	11	14.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.0	1.8	2.5	V
IDSS	Drain-Source Leakage Current	VDS=32V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=32V , VGS=0V , TJ=55℃	---	---	25	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=5V , ID=15A	---	31	---	S
Qg	Yese Gedhi Charge (4.5V)	VDS=20V ,VGS=10V ,ID=7A	---	20	30	nC
Qgs	Gate-Source Charge		---	3.9	---
Qgd	Gate-Drain Charge		---	3	---
Td(pa)	Batidza Kunonoka Nguva	VDD=20V,VGEN=10V,RG=1Ω, ID=1A, RL=20Ω.	---	12.6	---	ns
Tr	Rise Time		---	10	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	23.6	---
Tf	Nguva Yekudonha		---	6	---
Ciss	Input Capacitance	VDS=20V , VGS=0V , f=1MHz	---	1125	---	pF
Coss	Output Capacitance		---	132	---
Crss	Reverse Transfer Capacitance		---	70	---