WSM340N10G N-chiteshi 100V 340A TOLL-8L WINSOK MOSFET

WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET Featured Image

tsananguro pfupi:

Model Number:WSM340N10G

BVDSS:100V

RDSON:1.6mΩ

ID:340A

Channel:N-chiteshi

Package:KUBVA-8L

Product Summery:Iyo voltage yeWSM340N10G MOSFET ndeye 100V, ikozvino i340A, kuramba ndeye 1.6mΩ, chiteshi iN-channel, uye pasuru ndeye TOLL-8L.

Applications:Midziyo yekurapa, drones, PD magetsi ekushandisa, magetsi eLED, zvigadzirwa zvemaindasitiri, nezvimwe.

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Product Detail

Application

Product Tags

General Description

Iyo WSM340N10G ndiyo yepamusoro-soro yekuita mugero N-Ch MOSFET ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye yegedhi kubhadharisa kune mazhinji einopindirana buck converter application. Iyo WSM340N10G inosangana neRoHS neGreen Chigadzirwa chinodiwa, 100% EAS inovimbiswa nekuvimbika kwekushanda kuzere kwakabvumidzwa.

Features

Advanced high cell density Trench tekinoroji , Super Low Gate Charge , Yakanakisa CdV/dt effect yadzikira , 100% EAS Guaranteed , Green Device Inowanikwa.

Applications

Synchronous rectification, DC/DC Converter, Load switch, Midziyo yekurapa, drones, PD magetsi emagetsi, magetsi eLED, midziyo yemumaindasitiri, nezvimwe.

Zvakakosha parameters

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	100	V
VGS	Gedhi-Mabviro Voltage	±20	V
ID@TC=25℃	Kuenderera mberi Drain Current, VGS @ 10V	340	A
ID@TC=100℃	Kuenderera mberi Drain Current, VGS @ 10V	230	A
IDM	Pulsed Drain Current..TC=25°C	1150	A
EAS	Avalanche Energy, Single pulse,L=0.5mH	1800	mJ
IAS	Avalanche Yazvino, Kurova kamwe chete,L=0.5mH	120	A
PD@TC=25℃	Total Power Dissipation	375	W
PD@TC=100℃	Total Power Dissipation	187	W
TSTG	Storage Temperature Range	-55 kusvika 175	℃
TJ	Operating Junction Temperature Range	175	℃

Electrical Characteristics (TJ=25℃, kunze kwekunge zvaratidzwa)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	100	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃, ID = 1mA	---	0.096	---	V/℃
RDS(V)	Static Drain-Source On-Resistance	VGS=10V,ID=50A	---	1.6	2.3	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=85V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=85V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Total Gedhi Charge (10V)	VDS=50V , VGS=10V , ID=50A	---	260	---	nC
Qgs	Gate-Source Charge		---	80	---
Qgd	Gate-Drain Charge		---	60	---
Td(pa)	Batidza Kunonoka Nguva	VDD=50V , VGS=10V ,RG=1Ω,RL=1Ω,IDS=1A.	---	88	---	ns
Tr	Rise Time		---	50	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	228	---
Tf	Nguva Yekudonha		---	322	---
Ciss	Input Capacitance	VDS=40V , VGS=0V , f=1MHz	---	13900	---	pF
Coss	Output Capacitance		---	6160	---
Crss	Reverse Transfer Capacitance		---	220	---