WSM320N04G N-chiteshi 40V 320A TOLL-8L WINSOK MOSFET

WSM320N04G N-channel 40V 320A TOLL-8L WINSOK MOSFET Featured Image

tsananguro pfupi:

Model Number:WSM320N04G

BVDSS:40V

RDSON:1.2mΩ

ID:320A

Channel:N-chiteshi

Package:KUBVA-8L

Product Summery:Iyo WSM320N04G MOSFET ine voltage ye40V, ikozvino ye320A, kuramba kwe1.2mΩ, N-channel, uye TOLL-8L package.

Applications:Midzanga yemagetsi, kuchaja isina waya, drones, kurapwa, kuchaja mota, controller, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi.

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Product Detail

Application

Product Tags

General Description

Iyo WSM320N04G ndeyepamusoro-inoshanda MOSFET inoshandisa mugero dhizaini uye ine yakakwira zvakanyanya sero density.Iyo ine yakanakisa RDSON uye yegedhi yekuchaja uye inokodzera akawanda synchronous buck converter application.Iyo WSM320N04G inosangana neRoHS uye Green Product zvinodiwa uye inovimbiswa kuve ne100% EAS uye yakazara basa rakavimbika.

Features

Yepamberi yakakwira cell density Trench tekinoroji, ukuwo iine yakaderera gedhi kubhadharisa kuita kwakaringana.Pamusoro pezvo, inozvirumbidza yakanakisa CdV/dt mhedzisiro kuderera, 100% EAS Guarantee uye eco-inoshamwaridzika sarudzo.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power Tool Application, Midzanga yeElectronic, kuchaja kusina wire, drones, mishonga, kuchaja motokari, zvidzori, zvigadzirwa zvedhijitari, midziyo midiki yemumba, nemagetsi evatengi.

Zvakakosha parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	40	V
VGS	Gedhi-Mabviro Voltage	±20	V
ID@TC=25℃	Kuenderera mberi Drain Current, VGS @ 10V1,7	320	A
ID@TC=100℃	Kuenderera mberi Drain Current, VGS @ 10V1,7	192	A
IDM	Pulsed Drain Current2	900	A
EAS	Imwe Pulse Avalanche Energy3	980	mJ
IAS	Avalanche Current	70	A
PD@TC=25℃	Total Power Dissipation4	250	W
TSTG	Storage Temperature Range	-55 kusvika 175	℃
TJ	Operating Junction Temperature Range	-55 kusvika 175	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃, ID = 1mA	---	0.050	---	V/℃
RDS(V)	Static Drain-Source On-Resistance2	VGS=10V , ID=25A	---	1.2	1.5	mΩ
RDS(V)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=20A	---	1.7	2.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.6	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=40V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=40V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=5V , ID=50A	---	160	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Total Gedhi Charge (10V)	VDS=20V , VGS=10V , ID=25A	---	130	---	nC
Qgs	Gate-Source Charge		---	43	---
Qgd	Gate-Drain Charge		---	83	---
Td(pa)	Batidza Kunonoka Nguva	VDD=20V , VGEN=4.5V , RG=2.7Ω, ID=1A .	---	30	---	ns
Tr	Rise Time		---	115	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	95	---
Tf	Nguva Yekudonha		---	80	---
Ciss	Input Capacitance	VDS=20V , VGS=0V , f=1MHz	---	8100	---	pF
Coss	Output Capacitance		---	1200	---
Crss	Reverse Transfer Capacitance		---	800	---