WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET

tsananguro pfupi:

Model Number:WSF70P02

BVDSS:-20V

RDSON:6.8mΩ

ID:-70A

Channel:P-Channel

Package:TO-252

Product Summery:Iyo WSF70P02 MOSFET ine voltage ye -20V, ikozvino ye -70A, kuramba 6.8mΩ, P-Channel, uye TO-252 kurongedza.

Applications:E-fodya, machaja asina waya, mota, mabhapu emagetsi, drones, hutano, majaja emota, zvidzori, zvemagetsi, midziyo, uye zvinhu zvevatengi.

Tumira email kwatiri PDF

Product Detail

Application

Product Tags

General Description

Iyo WSF70P02 MOSFET ndiyo iripamusoro-inoita P-channel mugero mudziyo une high cell density. Iyo inopa yakasarudzika RDSON uye yegedhi kubhadharisa kune akawanda synchronous buck converter application. Chishandiso chinosangana neRoHS uye Green Chigadzirwa zvinodiwa, ndeye 100% EAS yakavimbiswa, uye yakatenderwa kuti izere basa rakavimbika.

Features

Yepamberi Trench Tekinoroji ine high cell density, super low gedhi charge, yakanakisa kudzikisira muCdV/dt mhedzisiro, 100% EAS garandi, uye sarudzo dzemidziyo inoshamwaridzana nenharaunda.

Applications

High Frequency Point-of-Load Synchronous ,Buck Converter yeMB/NB/UMPC/VGA ,Networking DC-DC Power System,Load Switch,E-fodya, kuchaja pasina wire, mota, magetsi echimbichimbi, drone, kurapwa, majaja emota. , vatongi, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi.

nhamba yezvinhu zvinoenderana

AOS

Zvakakosha parameters

Symbol	Parameter	Rating		Units
		10s	steady State
VDS	Drain-Source Voltage	-20		V
VGS	Gedhi-Mabviro Voltage	±12		V
ID@TC=25℃	Kuenderera mberi Drain Current, VGS @ -10V1	-70		A
ID@TC=100℃	Kuenderera mberi Drain Current, VGS @ -10V1	-36		A
IDM	Pulsed Drain Current2	-200		A
EAS	Imwe Pulse Avalanche Energy3	360		mJ
IAS	Avalanche Current	-55.4		A
PD@TC=25℃	Total Power Dissipation4	80		W
TSTG	Storage Temperature Range	-55 kusvika ku150		℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150		℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃ , ID = -1mA	---	-0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-15A	---	6.8	9.0	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V , ID=-10A	---	8.2	11
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.4	-0.6	-1.2	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Temperature Coefficient		---	2.94	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	5
IGSS	Gedhi-Mabviro Leakage Current	VGS=±12V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=-5V , ID=-10A	---	45	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-15V , VGS=-4.5V , ID=-10A	---	63	---	nC
Qgs	Gate-Source Charge		---	9.1	---
Qgd	Gate-Drain Charge		---	13	---
Td(pa)	Batidza Kunonoka Nguva	VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-10A	---	16	---	ns
Tr	Rise Time		---	77	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	195	---
Tf	Nguva Yekudonha		---	186	---
Ciss	Input Capacitance	VDS=-10V , VGS=0V , f=1MHz	---	5783	---	pF
Coss	Output Capacitance		---	520	---
Crss	Reverse Transfer Capacitance		---	445	---