WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET

tsananguro pfupi:

Model Number:WSF70P02

BVDSS:-20V

RDSON:6.8mΩ

ID:-70A

Channel:P-Channel

Package:TO-252

Product Summery:Iyo WSF70P02 MOSFET ine voltage ye -20V, ikozvino ye -70A, kuramba 6.8mΩ, P-Channel, uye TO-252 kurongedza.

Applications:E-fodya, machaja asina waya, mota, mabhapu emagetsi, drones, hutano, majaja emota, zvidzori, zvemagetsi, midziyo, uye zvinhu zvevatengi.

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Product Detail

Application

Product Tags

General Description

Iyo WSF70P02 MOSFET ndiyo iripamusoro-inoita P-channel mugero mudziyo une high cell density.Iyo inopa yakasarudzika RDSON uye yegedhi kubhadharisa kune akawanda synchronous buck converter application.Chishandiso chinosangana neRoHS uye Green Chigadzirwa zvinodiwa, ndeye 100% EAS yakavimbiswa, uye yakatenderwa kuti izere basa rakavimbika.

Features

Yepamberi Trench Tekinoroji ine yakakwira sero density, super yakaderera gedhi charge, yakanakisa kudzikisira muCdV/dt mhedzisiro, 100% EAS garandi, uye sarudzo dzemidziyo inoshamwaridzana nenharaunda.

Applications

High Frequency Point-of-Load Synchronous ,Buck Converter yeMB/NB/UMPC/VGA ,Networking DC-DC Power System,Load Switch,E-fodya, kuchaja pasina wire, mota, magetsi echimbichimbi, drone, kurapwa, majaja emota. , vatongi, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi.

nhamba yezvinhu zvinoenderana

AOS

Zvakakosha parameters

Symbol	Parameter	Rating		Units
		10s	steady State
VDS	Drain-Source Voltage	-20		V
VGS	Gedhi-Mabviro Voltage	±12		V
ID@TC=25℃	Kuenderera mberi Drain Current, VGS @ -10V1	-70		A
ID@TC=100℃	Kuenderera mberi Drain Current, VGS @ -10V1	-36		A
IDM	Pulsed Drain Current2	-200		A
EAS	Imwe Pulse Avalanche Energy3	360		mJ
IAS	Avalanche Current	-55.4		A
PD@TC=25℃	Total Power Dissipation4	80		W
TSTG	Storage Temperature Range	-55 kusvika ku150		℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150		℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃ , ID = -1mA	---	-0.018	---	V/℃
RDS(V)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-15A	---	6.8	9.0	mΩ
RDS(V)	Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V , ID=-10A	---	8.2	11
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.4	-0.6	-1.2	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Temperature Coefficient		---	2.94	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	5
IGSS	Gedhi-Mabviro Leakage Current	VGS=±12V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=-5V , ID=-10A	---	45	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-15V , VGS=-4.5V , ID=-10A	---	63	---	nC
Qgs	Gate-Source Charge		---	9.1	---
Qgd	Gate-Drain Charge		---	13	---
Td(pa)	Batidza Kunonoka Nguva	VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-10A	---	16	---	ns
Tr	Rise Time		---	77	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	195	---
Tf	Nguva Yekudonha		---	186	---
Ciss	Input Capacitance	VDS=-10V , VGS=0V , f=1MHz	---	5783	---	pF
Coss	Output Capacitance		---	520	---
Crss	Reverse Transfer Capacitance		---	445	---