WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

tsananguro pfupi:

Model Number:WSF6012

BVDSS:60V/-60V

RDSON:28mΩ/75mΩ

ID:20A/-15A

Channel:N&P-Channel

Package:TO-252-4L

Product Summery:Iyo WSF6012 MOSFET ine voltage renji ye60V uye -60V, inokwanisa kubata macurrents anosvika 20A uye -15A, ine resistance ye28mΩ ne75mΩ, inoratidzira zvese N&P-Channel, uye yakaiswa muTO-252-4L.

Applications:E-fodya, machaja asina waya, mota, mabhapu emagetsi, drones, hutano, majaja emota, zvidzori, zvemagetsi, midziyo, uye zvinhu zvevatengi.

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Product Detail

Application

Product Tags

General Description

Iyo WSF6012 MOSFET chishandiso chepamusoro-soro chine dhizaini yakakwira masero.Iyo inopa yakanakisa RDSON uye yegedhi yekuchaja yakakodzera kune yakawanda synchronous buck converter application.Pamusoro pezvo, inosangana neRoHS uye Green Product zvinodiwa, uye inouya ne100% EAS garandi yekushanda kwakazara uye kuvimbika.

Features

Advanced Trench Technology ine High Cell Density, Super Low Gate Charge, Yakanakisa CdV/dt Effect Decline, 100% EAS Guarantee, uye Environmental-Ishamwari Device Options.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-fodya, kuchaja isina waya, mota, magetsi ekukurumidzira, drones, hutano, majaja emota, controller, midziyo yedhijitari, midziyo midiki yemumba, uye zvemagetsi zvevatengi.

nhamba yezvinhu zvinoenderana

AOS AOD603A,

Zvakakosha parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	N-Channel	P-Channel	Units
VDS	Drain-Source Voltage	60	-60	V
VGS	Gedhi-Mabviro Voltage	±20	±20	V
ID@TC=25℃	Kunoenderera mberi Drain Current, VGS @ 10V1	20	-15	A
ID@TC=70℃	Kunoenderera mberi Drain Current, VGS @ 10V1	15	-10	A
IDM	Pulsed Drain Current2	46	-36	A
EAS	Imwe Pulse Avalanche Energy3	200	180	mJ
IAS	Avalanche Current	59	-50	A
PD@TC=25℃	Total Power Dissipation4	34.7	34.7	W
TSTG	Storage Temperature Range	-55 kusvika ku150	-55 kusvika ku150	℃
TJ	Operating Junction Temperature Range	-55 kusvika ku150	-55 kusvika ku150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V , ID=250uA	60	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference kune 25 ℃ , ID = 1mA	---	0.063	---	V/℃
RDS(V)	Static Drain-Source On-Resistance2	VGS=10V , ID=8A	---	28	37	mΩ
RDS(V)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=5A	---	37	45	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1	---	2.5	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.24	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gedhi-Mabviro Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Pamberi Transconductance	VDS=5V , ID=8A	---	21	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	3.0	4.5	Ω
Qg	Yese Gedhi Charge (4.5V)	VDS=48V , VGS=4.5V , ID=8A	---	12.6	20	nC
Qgs	Gate-Source Charge		---	3.5	---
Qgd	Gate-Drain Charge		---	6.3	---
Td(pa)	Batidza Kunonoka Nguva	VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A	---	8	---	ns
Tr	Rise Time		---	14.2	---
Td(kudzima)	Kudzima Kunonoka Nguva		---	24.6	---
Tf	Nguva Yekudonha		---	4.6	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	670	---	pF
Coss	Output Capacitance		---	70	---
Crss	Reverse Transfer Capacitance		---	35	---