WSF4022 Dual N-Channel 40V 20A TO-252-4L WINSOK MOSFET
General Description
Iyo WSF4022 ndiyo yepamusoro-soro yekuita mugero Dual N-Ch MOSFET ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye kubhadharisa gedhi kune akawanda esynchronous buck converter application.WSF4022 inosangana neRoHS neGreen Chigadzirwa chinodiwa 100% EAS inovimbiswa nekushanda kwakazara. kuvimbika kwakabvumidzwa.
Features
YeFan Pre-driver H-Bridge,Motor Control, Synchronous Rectification,E-fodya, kuchaja isina waya, mota, magetsi ekukurumidzira, madrone, kurapwa, majaja emota, zvidzori, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi.
Applications
YeFan Pre-driver H-Bridge,Motor Control, Synchronous Rectification,E-fodya, kuchaja isina waya, mota, magetsi ekukurumidzira, madrone, kurapwa, majaja emota, zvidzori, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi.
nhamba yezvinhu zvinoenderana
AOS
Zvakakosha parameters
| Symbol | Parameter | Rating | Units | |
| VDS | Drain-Source Voltage | 40 | V | |
| VGS | Gedhi-Mabviro Voltage | ±20 | V | |
| ID | Dhonza Zvazvino (Inoenderera) *AC | TC=25°C | 20* | A |
| ID | Dhonza Zvazvino (Inoenderera) *AC | TC=100°C | 20* | A |
| ID | Dhonza Zvazvino (Inoenderera) *AC | TA=25°C | 12.2 | A |
| ID | Dhonza Zvazvino (Inoenderera) *AC | TA=70°C | 10.2 | A |
| IDMa | Pulsed Drain Current | TC=25°C | 80* | A |
| EASb | Imwe Pulse Avalanche Energy | L=0.5mH | 25 | mJ |
| IAS b | Avalanche Current | L=0.5mH | 17.8 | A |
| PD | Maximum Power Dissipation | TC=25°C | 39.4 | W |
| PD | Maximum Power Dissipation | TC=100°C | 19.7 | W |
| PD | Kuparadza Simba | TA=25°C | 6.4 | W |
| PD | Kuparadza Simba | TA=70°C | 4.2 | W |
| TJ | Operating Junction Temperature Range | 175 | ℃ | |
| TSTG | Operating Temperature/ Storage Temperature | -55~175 | ℃ | |
| RθJA b | Thermal Resistance Junction-Ambient | Nyika Yakatsiga c | 60 | ℃/W |
| RθJC | Thermal Resistance Junction kune Nyaya | 3.8 | ℃/W |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Static | ||||||
| V(BR)DSS | Drain-Source Kuputsa Voltage | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | Zero Gedhi Voltage Drain Current | VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | Zero Gedhi Voltage Drain Current | VDS = 32V, VGS = 0V, TJ=85°C | 30 | µA | ||
| IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.1 | 1.6 | 2.5 | V |
| RDS(pa) d | Drain-Source On-state Resistance | VGS = 10V, ID = 10A | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A | 18 | 25 | mΩ | |||
| Gate Chargee | ||||||
| Qg | Total Gate Charge | VDS=20V,VGS=4.5V, ID=10A | 7.5 | nC | ||
| Qgs | Gate-Source Charge | 3.24 | nC | |||
| Qgd | Gate-Drain Charge | 2.75 | nC | |||
| Dynamice | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=20V, f=1MHz | 815 | pF | ||
| Coss | Output Capacitance | 95 | pF | |||
| Crss | Reverse Transfer Capacitance | 60 | pF | |||
| td (pa) | Batidza Kunonoka Nguva | VDD=20V, VGEN=10V, IDS=1A,RG=6Ω,RL=20Ω. | 7.8 | ns | ||
| tr | Batidza Rise Nguva | 6.9 | ns | |||
| td(kudzima) | Kudzima Kunonoka Nguva | 22.4 | ns | |||
| tf | Turn-off Fall Time | 4.8 | ns | |||
| Diode | ||||||
| VSDd | Diode Forward Voltage | ISD=1A, VGS=0V | 0.75 | 1.1 | V | |
| trr | Input Capacitance | IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | Output Capacitance | 8.7 | nC | |||
