WSD80120DN56 N-chiteshi 85V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD80120DN56 MOSFET ndeye 85V, ikozvino i120A, kuramba ndeye 3.7mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
Medical voltage MOSFET, midziyo yemifananidzo MOSFET, drones MOSFET, maindasitiri anodzora MOSFET, 5G MOSFET, mota dzemagetsi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 85 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| ID@TC=25℃ | Kuenderera mberi Drain Current, VGS@10V | 120 | A |
| ID@TC=100℃ | Kuenderera mberi Drain Current, VGS@10V | 96 | A |
| IDM | Pulsed Drain Current..TC=25°C | 384 | A |
| EAS | Avalanche Energy, Single pulse,L=0.5mH | 320 | mJ |
| IAS | Avalanche Yazvino, Kurova kamwe chete,L=0.5mH | 180 | A |
| PD@TC=25℃ | Total Power Dissipation | 104 | W |
| PD@TC=100℃ | Total Power Dissipation | 53 | W |
| TSTG | Storage Temperature Range | -55 kusvika 175 | ℃ |
| TJ | Operating Junction Temperature Range | 175 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 85 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference ku25℃,ID=1mA | --- | 0.096 | --- | V/℃ |
| RDS(V) | Static Drain-Source On-Resistance | VGS=10V,ID=50A | --- | 3.7 | 4.8 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=85V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±25V ,VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Total Gedhi Charge (10V) | VDS=50V , VGS=10V ,ID=10A | --- | 54 | --- | nC |
| Qgs | Gate-Source Charge | --- | 17 | --- | ||
| Qgd | Gate-Drain Charge | --- | 11 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=50V , VGS=10V , RG=1Ω,RL=1Ω,IDS=10A. | --- | 21 | --- | ns |
| Tr | Rise Time | --- | 18 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 36 | --- | ||
| Tf | Nguva Yekudonha | --- | 10 | --- | ||
| Ciss | Input Capacitance | VDS=40V , VGS=0V , f=1MHz | --- | 3750 | --- | pF |
| Coss | Output Capacitance | --- | 395 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 180 | --- |
