WSD80100DN56 N-chiteshi 80V 100A DFN5X6-8 WINSOK MOSFET

zvigadzirwa

WSD80100DN56 N-chiteshi 80V 100A DFN5X6-8 WINSOK MOSFET

tsananguro pfupi:

Chikamu Nhamba:WSD80100DN56

BVDSS:80V

ID:100A

RDSON:6.1mΩ

Channel:N-chiteshi

Package:DFN5X6-8


Product Detail

Application

Product Tags

WINSOK MOSFET chigadzirwa chepamusoro

Iyo voltage yeWSD80100DN56 MOSFET ndeye 80V, ikozvino i100A, kuramba ndeye 6.1mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.

WINSOK MOSFET nzvimbo dzekushandisa

Drones MOSFET, mota MOSFET, mota dzemagetsi MOSFET, midziyo mikuru MOSFET.

WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.

MOSFET parameters

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

80

V

VGS

Gate-Source Voltage

±20

V

TJ

Maximum Junction Temperature

150

°C

ID

Storage Temperature Range

-55 kusvika ku150

°C

ID

Kuenderera mberi Drain Current, VGS=10V,TC=25°C

100

A

Kuenderera mberi Drain Current, VGS=10V,TC=100°C

80

A

IDM

Pulsed Drain Current, TC=25°C

380

A

PD

Kunyanya Kubvisa Simba, TC=25°C

200

W

RqJC

Thermal Resistance-Junction kune Nyaya

0.8

°C

EAS

Avalanche Energy, Single pulse,L=0.5mH

800

mJ

 

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Kuputsa Voltage VGS=0V ,ID=250uA

80

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Reference ku25,ID=1mA

---

0.043

---

V/

RDS(V)

Static Drain-Source On-Resistance2 VGS=10V , ID=40A

---

6.1

8.5

mΩ

VGS(th)

Gate Threshold Voltage VGS=VDS,ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Temperature Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25

---

---

2

uA

VDS=48V , VGS=0V , TJ=55

---

---

10

IGSS

Gedhi-Mabviro Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Pamberi Transconductance VDS=5V ,ID=20A

80

---

---

S

Qg

Total Gedhi Charge (10V) VDS=30V , VGS=10V ,ID=30A

---

125

---

nC

Qgs

Gate-Source Charge

---

24

---

Qgd

Gate-Drain Charge

---

30

---

Td(pa)

Batidza Kunonoka Nguva VDD=30V , VGS=10V ,

RG=2.5Ω,ID=2A ,RL=15Ω.

---

20

---

ns

Tr

Rise Time

---

19

---

Td(kudzima)

Kudzima Kunonoka Nguva

---

70

---

Tf

Nguva Yekudonha

---

30

---

Ciss

Input Capacitance VDS=25V , VGS=0V , f=1MHz

---

4900

---

pF

Coss

Output Capacitance

---

410

---

Crss

Reverse Transfer Capacitance

---

315

---


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