WSD75N12GDN56 N-chiteshi 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD75N12GDN56 MOSFET ndeye 120V, ikozvino i75A, kuramba iri 6mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
Midziyo yekurapa MOSFET, drones MOSFET, PD magetsi ekushandisa MOSFET, LED magetsi emagetsi MOSFET, maindasitiri midziyo MOSFET.
MOSFET minda yekushandisaWINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDSS | Drain-to-Source Voltage | 120 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | 1 Kuenderera Kunodonhedza Parizvino (Tc=25℃) | 75 | A |
| ID | 1 Kuenderera Kunodonhedza Parizvino (Tc=70℃) | 70 | A |
| IDM | Pulsed Drain Current | 320 | A |
| IAR | Single pulse avalanche current | 40 | A |
| EASa | Single pulse avalanche energy | 240 | mJ |
| PD | Kuparadza Simba | 125 | W |
| TJ, Tst | Operating Junction uye Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TL | Maximum Temperature yeSoldering | 260 | ℃ |
| RθJC | Thermal Resistance, Junction-to-Case | 1.0 | ℃/W |
| RθJA | Thermal Resistance, Junction-to-Ambient | 50 | ℃/W |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| VDSS | Dhonza kune Source Breakdown Voltage | VGS=0V, ID=250µA | 120 | -- | -- | V |
| IDSS | Dhonza kune Source Leakage Current | VDS = 120V, VGS = 0V | -- | -- | 1 | µA |
| IGSS(F) | Gate kune Source Forward Leakage | VGS =+20V | -- | -- | 100 | nA |
| IGSS(R) | Gate kune Source Reverse Leakage | VGS =-20V | -- | -- | -100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID = 250µA | 2.5 | 3.0 | 3.5 | V |
| RDS(ON)1 | Drain-to-Source On-Resistance | VGS=10V, ID=20A | -- | 6.0 | 6.8 | mΩ |
| gFS | Pamberi Transconductance | VDS=5V, ID=50A | 130 | -- | S | |
| Ciss | Input Capacitance | VGS = 0V VDS = 50V f =1.0MHz | -- | 4282 | -- | pF |
| Coss | Output Capacitance | -- | 429 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Rg | Kuramba gedhi | -- | 2.5 | -- | Ω | |
| td(ON) | Batidza Kunonoka Nguva | ID =20A VDS = 50V VGS = 10V RG = 5Ω | -- | 20 | -- | ns |
| tr | Rise Time | -- | 11 | -- | ns | |
| td(OFF) | Kudzima Kunonoka Nguva | -- | 55 | -- | ns | |
| tf | Nguva Yekudonha | -- | 28 | -- | ns | |
| Qg | Total Gate Charge | VGS =0~10V VDS = 50VID =20A | -- | 61.4 | -- | nC |
| Qgs | Gate Source Charge | -- | 17.4 | -- | nC | |
| Qgd | Gate Drain Charge | -- | 14.1 | -- | nC | |
| IS | Diode Forward Current | TC =25 °C | -- | -- | 100 | A |
| ISM | Diode Pulse Yazvino | -- | -- | 320 | A | |
| VSD | Diode Forward Voltage | IS=6.0A, VGS=0V | -- | -- | 1.2 | V |
| trr | Reverse Recovery nguva | IS=20A, VDD=50V dIF/dt=100A/μs | -- | 100 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 250 | -- | nC |
