WSD75100DN56 N-chiteshi 75V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD75100DN56 MOSFET ndeye 75V, ikozvino i100A, kuramba ndeye 5.3mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
E-fodya MOSFET, isina waya yekuchaja MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, dijitari zvigadzirwa MOSFET, midziyo midiki yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NSFETNS3PONEG7PSFETNS3GPS7NS3GNPS3G,BS3GN X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 75 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| TJ | Maximum Junction Temperature | 150 | °C |
| ID | Storage Temperature Range | -55 kusvika ku150 | °C |
| IS | Diode Inoenderera mberi Pamberi Yazvino, TC=25°C | 50 | A |
| ID | Kuenderera mberi Drain Current, VGS=10V,TC=25°C | 100 | A |
| Kuenderera mberi Drain Current, VGS=10V,TC=100°C | 73 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 400 | A |
| PD | Kunyanya Kubvisa Simba, TC=25°C | 155 | W |
| Kunyanya Kubvisa Simba, TC=100°C | 62 | W | |
| RθJA | Thermal Resistance-Junction to Ambient ,t =10s ̀ | 20 | °C |
| Thermal Resistance-Junction kune Ambient,Statedy State | 60 | °C | |
| RqJC | Thermal Resistance-Junction kune Nyaya | 0.8 | °C |
| IAS | Avalanche Yazvino, Kurova kamwe chete,L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single pulse,L=0.5mH | 225 | mJ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference ku25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=25A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V ,VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=5V ,ID=20A | --- | 50 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Total Gate Charge (10V) | VDS=20V , VGS=10V ,ID=40A | --- | 65 | 85 | nC |
| Qgs | Gate-Source Charge | --- | 20 | --- | ||
| Qgd | Gate-Drain Charge | --- | 17 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=30V , VGEN=10V , RG=1Ω,ID=1A ,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Rise Time | --- | 14 | 26 | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 60 | 108 | ||
| Tf | Nguva Yekudonha | --- | 37 | 67 | ||
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Output Capacitance | 245 | 395 | 652 | ||
| Crss | Reverse Transfer Capacitance | 100 | 195 | 250 |
