WSD60N12GDN56 N-chiteshi 120V 70A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD60N12GDN56 MOSFET ndeye 120V, ikozvino i70A, kuramba iri 10mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
Midziyo yekurapa MOSFET, drones MOSFET, PD magetsi ekushandisa MOSFET, LED magetsi emagetsi MOSFET, maindasitiri midziyo MOSFET.
MOSFET minda yekushandisaWINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 120 | V |
| VGS | Gedhi-Mabviro Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current | 70 | A |
| IDP | Pulsed Drain Current | 150 | A |
| EAS | Avalanche Energy, Single pulse | 53.8 | mJ |
| PD@TC=25℃ | Total Power Dissipation | 140 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 120 | --- | --- | V |
| Static Drain-Source On-Resistance | VGS=10V,ID=10A. | --- | 10 | 15 | mΩ | |
| RDS(V) | VGS=4.5V,ID=10A. | --- | 18 | 25 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Total Gedhi Charge (10V) | VDS=50V , VGS=10V ,ID=25A | --- | 33 | --- | nC |
| Qgs | Gate-Source Charge | --- | 5.6 | --- | ||
| Qgd | Gate-Drain Charge | --- | 7.2 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=50V , VGS=10V , RG=2Ω,ID=25A | --- | 22 | --- | ns |
| Tr | Rise Time | --- | 10 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 85 | --- | ||
| Tf | Nguva Yekudonha | --- | 112 | --- | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | --- | 2640 | --- | pF |
| Coss | Output Capacitance | --- | 330 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 11 | --- | ||
| IS | Continuous Source Current | VG=VD=0V , Simba Ikozvino | --- | --- | 50 | A |
| ISP | Pulsed Source Current | --- | --- | 150 | A | |
| VSD | Diode Forward Voltage | VGS=0V ,IS=12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Reverse Recovery Time | IF=25A,dI/dt=100A/µs,TJ=25℃ | --- | 62 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 135 | --- | nC |
