WSD60N10GDN56 N-chiteshi 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD60N10GDN56 MOSFET ndeye 100V, ikozvino i60A, kuramba ndeye 8.5mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
E-fodya MOSFET, isina waya yekuchaja MOSFET, mota MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, digital zvigadzirwa MOSFET, diki midziyo yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
MOSFET minda yekushandisaWINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINFETNS3BLOGOSSCANPHINEON,IRTOMOSFINEON,IRTOMOSFET19 8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gedhi-Mabviro Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current | 60 | A |
| IDP | Pulsed Drain Current | 210 | A |
| EAS | Avalanche Energy, Single pulse | 100 | mJ |
| PD@TC=25℃ | Total Power Dissipation | 125 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 100 | --- | --- | V |
| Static Drain-Source On-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(V) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| Qg | Total Gedhi Charge (10V) | VDS=50V , VGS=10V ,ID=25A | --- | 49.9 | --- | nC |
| Qgs | Gate-Source Charge | --- | 6.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 12.4 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=50V , VGS=10V ,RG=2.2Ω,ID=25A | --- | 20.6 | --- | ns |
| Tr | Rise Time | --- | 5 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 51.8 | --- | ||
| Tf | Nguva Yekudonha | --- | 9 | --- | ||
| Ciss | Input Capacitance | VDS=50V , VGS=0V , f=1MHz | --- | 2604 | --- | pF |
| Coss | Output Capacitance | --- | 362 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | Continuous Source Current | VG=VD=0V , Simba Ikozvino | --- | --- | 60 | A |
| ISP | Pulsed Source Current | --- | --- | 210 | A | |
| VSD | Diode Forward Voltage | VGS=0V ,IS=12A , TJ=25℃ | --- | --- | 1.3 | V |
| trr | Reverse Recovery Time | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 106.1 | --- | nC |
