WSD6070DN56 N-chiteshi 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD6070DN56 MOSFET ndeye 60V, ikozvino i80A, kuramba ndeye 7.3mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
E-fodya MOSFET, isina waya yekuchaja MOSFET, mota MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, digital zvigadzirwa MOSFET, diki midziyo yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
POTENS Semiconductor MOSFET PDC696X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 60 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| TJ | Maximum Junction Temperature | 150 | °C |
| ID | Storage Temperature Range | -55 kusvika ku150 | °C |
| IS | Diode Inoenderera mberi Pamberi Yazvino, TC=25°C | 80 | A |
| ID | Kuenderera mberi Drain Current, VGS=10V,TC=25°C | 80 | A |
| Kuenderera mberi Drain Current, VGS=10V,TC=100°C | 66 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 300 | A |
| PD | Kunyanya Kubvisa Simba, TC=25°C | 150 | W |
| Kunyanya Kubvisa Simba, TC=100°C | 75 | W | |
| RθJA | Thermal Resistance-Junction to Ambient ,t =10s ̀ | 50 | °C/W |
| Thermal Resistance-Junction kune Ambient,Statedy State | 62.5 | °C/W | |
| RqJC | Thermal Resistance-Junction kune Nyaya | 1 | °C/W |
| IAS | Avalanche Yazvino, Kurova kamwe chete,L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single pulse,L=0.5mH | 225 | mJ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference ku25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(V) | Static Drain-Source On-Resistance2 | VGS=10V , ID=40A | --- | 7.0 | 9.0 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=5V ,ID=20A | --- | 50 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Total Gedhi Charge (10V) | VDS=30V , VGS=10V ,ID=40A | --- | 48 | --- | nC |
| Qgs | Gate-Source Charge | --- | 17 | --- | ||
| Qgd | Gate-Drain Charge | --- | 12 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=30V , VGEN=10V , RG=1Ω,ID=1A ,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Rise Time | --- | 10 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 40 | --- | ||
| Tf | Nguva Yekudonha | --- | 35 | --- | ||
| Ciss | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 2680 | --- | pF |
| Coss | Output Capacitance | --- | 386 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 160 | --- |
