WSD6060DN56 N-chiteshi 60V 65A DFN5X6-8 WINSOK MOSFET

WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET Featured Image

tsananguro pfupi:

Chikamu Nhamba:WSD6060DN56

BVDSS:60V

ID:65A

RDSON:7.5mΩ

Channel:N-chiteshi

Package:DFN5X6-8

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WINSOK MOSFET chigadzirwa chepamusoro

Iyo voltage yeWSD6060DN56 MOSFET ndeye 60V, ikozvino i65A, kuramba ndeye 7.5mΩ, chiteshi iN-channel, uye pasuru ndeye DFN5X6-8.

WINSOK MOSFET nzvimbo dzekushandisa

E-fodya MOSFET, isina waya yekuchaja MOSFET, mota MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, digital zvigadzirwa MOSFET, diki midziyo yemumba MOSFET, zvemagetsi zvevatengi MOSFET.

WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET parameters

Symbol	Parameter		Rating	Unit
Common Ratings
VDSS	Drain-Source Voltage		60	V
VGSS	Gedhi-Mabviro Voltage		±20	V
T_J	Maximum Junction Temperature		150	°C
TSTG	Storage Temperature Range		-55 kusvika ku150	°C
I_S	Diode Inoenderera Mberi Yazvino	T_c=25°C	30	A
ID	Continuous Drain Current	T_c=25°C	65	A
ID	Continuous Drain Current	T_c=70°C	42	A
I DM b	Pulse Drain Current Tested	T_c=25°C	250	A
P_D	Maximum Power Dissipation	T_c=25°C	62.5	W
P_D	Maximum Power Dissipation	T_C=70°C	38	W
R_qJL	Thermal Resistance-Junction to Lead	steady State	2.1	°C/W
RqJA	Thermal Resistance-Junction kune Ambient	t £ 10s	45	°C/W
RqJA	Thermal Resistance-Junction kune Ambient	steady State^b	50	°C/W
Ini AS^d	Avalanche Yazvino, Single pulse	L=0.5mH	18	A
E AS d	Avalanche Energy, Single pulse	L=0.5mH	81	mJ

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BV_DSS	Drain-Source Kuputsa Voltage	V_GS=0V,I_DS=250mA		60	-	-	V
IDSS	Zero Gedhi Voltage Drain Current	V_DS=48V, V_GS=0V		-	-	1	mA
IDSS	Zero Gedhi Voltage Drain Current						mA
			T_J=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	V_DS=V_GS,I_DS=250mA		1.2	1.5	2.5	V
IGSS	Gate Leakage Current	V_GS=±20V, V_DS=0V		-	-	±100	nA
R DS(ON) 3	Drain-Source On-state Resistance	V_GS=10V,I_DS=20A		-	7.5	10	m W
R DS(ON) 3	Drain-Source On-state Resistance	V_GS=4.5V,I_DS=15 A		-	10	15	m W
Diode Characteristics
V SD	Diode Forward Voltage	I_SD=1A,V_GS=0V		-	0.75	1.2	V
t_rr	Reverse Recovery Time	I_SD=20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Reverse Recovery Charge	I_SD=20A, dl_SD/dt=100A/µs		-	36	-	nC
Dynamic Hunhu^3,4
R_G	Gate Resistance	V_GS=0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_iss	Input Capacitance	V_GS=0V, V_DS=30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Output Capacitance			-	270	-
C_rss	Reverse Transfer Capacitance			-	40	-
td(ON)	Batidza Kunonoka Nguva	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Batidza Rise Nguva			-	6	-
td( KUDZIMA)	Kudzima Kunonoka Nguva			-	33	-
t_f	Turn-off Fall Time			-	30	-
Gate Charge Maitiro ^3,4
Q_g	Total Gate Charge	V_DS=30V, V_GS=4.5V,I_DS=20A		-	13	-	nC
Q_g	Total Gate Charge	V_DS=30V, V_GS=10V, I_DS=20A		-	27	-
Q_gth	Threshold Gate Charge			-	4.1	-
Q_gs	Gate-Source Charge			-	5	-
Q_gd	Gate-Drain Charge			-	4.2	-