WSD6040DN56 N-chiteshi 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD6040DN56 MOSFET ndeye 60V, ikozvino i36A, kuramba iri 14mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
E-fodya MOSFET, isina waya yekuchaja MOSFET, mota MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, digital zvigadzirwa MOSFET, diki midziyo yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
MOSFET parameters
| Symbol | Parameter | Rating | Units | ||
| VDS | Drain-Source Voltage | 60 | V | ||
| VGS | Gedhi-Mabviro Voltage | ±20 | V | ||
| ID | Continuous Drain Current | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Continuous Drain Current | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Pulsed Drain Current | TC=25°C | 140 | A | |
| PD | Maximum Power Dissipation | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Maximum Power Dissipation | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Avalanche Yazvino, Single pulse | L=0.5mH | 16 | A | |
| EASc | Imwe Pulse Avalanche Energy | L=0.5mH | 64 | mJ | |
| IS | Diode Inoenderera Mberi Yazvino | TC=25°C | 18 | A | |
| TJ | Maximum Junction Temperature | 150 | ℃ | ||
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ | ||
| RθJAb | Thermal Resistance Junction kune ambient | steady State | 60 | ℃/W | |
| RθJC | Thermal Resistance-Junction kune Nyaya | steady State | 3.3 | ℃/W | |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
| Static | |||||||
| V(BR)DSS | Drain-Source Kuputsa Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gedhi Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Gate Leakage Current | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Pamusoro peHunhu | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS(yakabatidzwa)d | Drain-Source On-state Resistance | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| Kuchinja | |||||||
| Qg | Total Gate Charge | VDS=30V VGS=10V ID=25A | 42 | nC | |||
| Qgs | Gate-Sour Charge | 6.4 | nC | ||||
| Qgd | Gate-Drain Charge | 9.6 | nC | ||||
| td (pa) | Batidza Kunonoka Nguva | VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Batidza Rise Nguva | 9 | ns | ||||
| td(kudzima) | Kudzima Kunonoka Nguva | 58 | ns | ||||
| tf | Turn-off Fall Time | 14 | ns | ||||
| Rg | Gat resistance | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Dynamic | |||||||
| Ciss | In Capacitance | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| Coss | Out Capacitance | 140 | pF | ||||
| Crss | Reverse Transfer Capacitance | 100 | pF | ||||
| Drain-Source Diode Hunhu uye Maximum Ratings | |||||||
| IS | Continuous Source Current | VG=VD=0V , Simba Yazvino | 18 | A | |||
| ISM | Pulsed Source Current3 | 35 | A | ||||
| VSDd | Diode Forward Voltage | ISD = 20A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Reverse Recovery Time | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
