WSD45N10GDN56 N-chiteshi 100V 45A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD45N10GDN56 MOSFET ndeye 100V, ikozvino i45A, kuramba iri 14.5mΩ, chiteshi iN-channel, uye pasuru ndeye DFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
E-fodya MOSFET, isina waya yekuchaja MOSFET, mota MOSFET, drones MOSFET, kurapwa MOSFET, mota charger MOSFET, controller MOSFET, digital zvigadzirwa MOSFET, diki midziyo yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kuenderera mberi Drain Current, VGS@10V | 45 | A |
| ID@TC=100℃ | Kuenderera mberi Drain Current, VGS@10V | 33 | A |
| ID@TA=25℃ | Kuenderera mberi Drain Current, VGS@10V | 12 | A |
| ID@TA=70℃ | Kuenderera mberi Drain Current, VGS@10V | 9.6 | A |
| IDMa | Pulsed Drain Current | 130 | A |
| EASb | Imwe Pulse Avalanche Energy | 169 | mJ |
| IASb | Avalanche Current | 26 | A |
| PD@TC=25℃ | Total Power Dissipation | 95 | W |
| PD@TA=25℃ | Total Power Dissipation | 5.0 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference ku25℃,ID=1mA | --- | 0.0 | --- | V/℃ |
| RDS(V)d | Static Drain-Source On-Resistance2 | VGS=10V ,ID=26A | --- | 14.5 | 17.5 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -5 | mV/℃ | ||
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | - | 1 | uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | - | 30 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V, VDS=0V | --- | - | ±100 | nA |
| Rge | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Total Gedhi Charge (10V) | VDS=50V , VGS=10V ,ID=26A | --- | 42 | 59 | nC |
| Qgse | Gate-Source Charge | --- | 12 | -- | ||
| Qgde | Gate-Drain Charge | --- | 12 | --- | ||
| Td(pa)e | Batidza Kunonoka Nguva | VDD=30V , VGEN=10V , RG=6Ω ID=1A ,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Rise Time | --- | 9 | 17 | ||
| Td(kudzima)e | Kudzima Kunonoka Nguva | --- | 36 | 65 | ||
| Tfe | Nguva Yekudonha | --- | 22 | 40 | ||
| Cisse | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 1800 | --- | pF |
| Cosse | Output Capacitance | --- | 215 | --- | ||
| Crsse | Reverse Transfer Capacitance | --- | 42 | --- |
