WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET chigadzirwa chekutarisa
Iyo voltage yeWSD4280DN22 MOSFET ndeye -15V, ikozvino -4.6A, kuramba iri 47mΩ, chiteshi iDual P-channel, uye pasuru iDFN2X2-6L.
WINSOK MOSFET application nzvimbo
Bidirectional blocking switch; DC-DC shanduko yekushandisa; Li-bhatiri kuchaja; E-fodya MOSFET, isina waya yekuchaja MOSFET, yekuchaja mota MOSFET, controller MOSFET, digital chigadzirwa MOSFET, midziyo midiki yemumba MOSFET, zvemagetsi zvevatengi MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
PANJIT MOSFET PJQ2815
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | -15 | V |
| VGS | Gedhi-Mabviro Voltage | ±8 | V |
| ID@Tc=25℃ | Kuenderera mberi Drain Current, VGS= -4.5V1 | -4.6 | A |
| IDM | 300μS Pulsed Drain Current, (VGS=-4.5V) | -15 | A |
| PD | Power Dissipation Derating pamusoro peTA = 25°C (Cherechedzo 2) | 1.9 | W |
| TSTG,TJ | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| RθJA | Thermal Resistance Junction-ambient1 | 65 | ℃/W |
| RθJC | Thermal Resistance Junction-Nyaya1 | 50 | ℃/W |
Electrical Characteristics (TJ=25 ℃, kunze kwekunge zvaratidzwa)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=-250uA | -15 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference kune 25 ℃, ID=-1mA | --- | -0.01 | --- | V/℃ |
| RDS(V) | Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-1A | --- | 47 | 61 | mΩ |
| VGS=-2.5V , ID=-1A | --- | 61 | 80 | |||
| VGS=-1.8V , ID=-1A | --- | 90 | 150 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=-250uA | -0.4 | -0.62 | -1.2 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | 3.13 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-10V , VGS=0V , TJ=25℃ | --- | --- | -1 | uA |
| VDS=-10V , VGS=0V , TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±12V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=-5V , ID=-1A | --- | 10 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2 | --- | Ω |
| Qg | Total Gate Charge (-4.5V) | VDS=-10V , VGS=-4.5V , ID=-4.6A | --- | 9.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.4 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.3 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=-10V ,VGS=-4.5V , RG=1Ω ID=-3.9A, | --- | 15 | --- | ns |
| Tr | Rise Time | --- | 16 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 30 | --- | ||
| Tf | Nguva Yekudonha | --- | 10 | --- | ||
| Ciss | Input Capacitance | VDS=-10V , VGS=0V , f=1MHz | --- | 781 | --- | pF |
| Coss | Output Capacitance | --- | 98 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 96 | --- |
