WSD4098 Dual N-Channel 40V 22A DFN5*6-8 WINSOK MOSFET

tsananguro pfupi:

Iyi imagnetic wireless power bank iyo inoziva otomatiki mafoni eApple uye haidi bhatani activation. Inobatanidza 2.0/QC3.0/PA2.0/PD3.0/SCP/AFC inopinza uye inobuda nekukurumidza kuchaja mapuroteni. Icho chigadzirwa chisina waya chebhangi chinowirirana neApple / Samsung nharembozha synchronous boost / step-down converters, Li bhatiri yekuchaja manejimendi, dijitari chubhu simba chiratidzo, magineti isina waya yekuchaja uye mamwe mabasa.

Model Number:WSD4098

BVDSS:40V

RDSON:7.8mΩ

ID:22A

Channel:Dual N-Channel

Package:DFN5*6-8

Product Summery:Iyo voltage yeWSD4098 MOSFET ndeye 40V, ikozvino i22A, kuramba ndeye 7.8mΩ, chiteshi iDual N-Channel, uye pasuru iDFN5 * 6-8.

Applications:E-fodya, kuchaja pasina waya, mota, zvidhori, kurapwa, majaja emota, ma controller, zvigadzirwa zvedhijitari, midziyo midiki yemumba, zvemagetsi zvevatengi.

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Product Detail

Application

Product Tags

General Description

Iyo WSD4098DN56 ndiyo yepamusoro-soro yekuita mugero Dual N-Ch MOSFET ine yakanyanyisa high cell density, iyo inopa yakanakisa RDSON uye yegedhi kubhadharisa kune akawanda esynchronous buck converter application. Iyo WSD4098DN56 inosangana neRoHS uye Green Chigadzirwa chinodiwa 100% EAS yakavimbiswa nekuvimbika kuzere kwebasa kwakabvumidzwa.

Features

Yepamberi yakakwira cell density Trench tekinoroji, Super Low Gate Charge, Yakanakisa CdV/dt mhedzisiro inodzikira, 100% EAS Yakavimbiswa, Green Device Inowanikwa

Applications

High Frequency Point-of-Load Synchronous,Buck Converter yeMB/NB/UMPC/VGA,Networking DC-DC Power System,Load Switch,E-fodya, kuchaja pasina wire, mota, drones, kurapwa, charger dzemota, controller, digital zvigadzirwa, midziyo midiki yemumba, zvemagetsi zvevatengi.

nhamba yezvinhu zvinoenderana

AOS AON6884

Zvakakosha parameters

Symbol	Parameter		Rating	Unit
Common Ratings
VDSS	Drain-Source Voltage		40	V
VGSS	Gedhi-Mabviro Voltage		±20	V
TJ	Maximum Junction Temperature		150	°C
TSTG	Storage Temperature Range		-55 kusvika ku150	°C
IS	Diode Inoenderera Mberi Yazvino	TA=25°C	11.4	A
ID	Continuous Drain Current	TA=25°C	22	A
ID	Continuous Drain Current			A
		TA=70°C	22
I DM b	Pulse Drain Current Tested	TA=25°C	88	A
PD	Maximum Power Dissipation	T. =25°C	25	W
PD	Maximum Power Dissipation	TC=70°C	10	W
RqJL	Thermal Resistance-Junction to Lead	steady State	5	°C/W
RqJA	Thermal Resistance-Junction kune Ambient	t £10s	45	°C/W
RqJA	Thermal Resistance-Junction kune Ambient	Nyika Yakagadzikana b	90	°C/W
Ini AS d	Avalanche Yazvino, Single pulse	L=0.5mH	28	A
E AS d	Avalanche Energy, Single pulse	L=0.5mH	39.2	mJ

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BVDSS	Drain-Source Kuputsa Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Zero Gedhi Voltage Drain Current	VDS=32V, VGS=0V		-	-	1	mA
IDSS	Zero Gedhi Voltage Drain Current						mA
			TJ=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=250mA		1.2	1.8	2.5	V
IGSS	Gate Leakage Current	VGS=±20V, VDS=0V		-	-	±100	nA
R DS(ON) e	Drain-Source On-state Resistance	VGS=10V, IDS=14A		-	6.8	7.8	m W
R DS(ON) e	Drain-Source On-state Resistance	VGS=4.5V, IDS=12 A		-	9.0	11	m W
Diode Characteristics
V SD e	Diode Forward Voltage	ISD=1A, VGS=0V		-	0.75	1.1	V
trr	Reverse Recovery Time	ISD=20A, dlSD/dt=100A/µs		-	23	-	ns
Qrr	Reverse Recovery Charge	ISD=20A, dlSD/dt=100A/µs		-	13	-	nC
Hunhu Hunesimba f
RG	Gate Resistance	VGS=0V,VDS=0V,F=1MHz		-	2.5	-	W
Ciss	Input Capacitance	VGS=0V, VDS=20V, Frequency=1.0MHz		-	1370	1781	pF
Coss	Output Capacitance			-	317	-
Crss	Reverse Transfer Capacitance			-	96	-
td(ON)	Batidza Kunonoka Nguva	VDD =20V, RL=20W, IDS=1A, VGEN=10V, RG=6W		-	13.8	-	ns
tr	Batidza Rise Nguva			-	8	-
td( KUDZIMA)	Kudzima Kunonoka Nguva			-	30	-
tf	Turn-off Fall Time			-	21	-
Gate Charge Hunhu f
Qg	Total Gate Charge	VDS=20V, VGS=10V, IDS=6A		-	23	28	nC
Qg	Total Gate Charge	VDS=20V, VGS=4.5V, IDS=6A		-	22	-
Qgth	Threshold Gate Charge			-	2.6	-
Qgs	Gate-Source Charge			-	4.7	-
Qgd	Gate-Drain Charge			-	3	-