WSD4080DN56 N-chiteshi 40V 85A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD4080DN56 MOSFET ndeye 40V, ikozvino i85A, kuramba ndeye 4.5mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
Zvishandiso zvidiki MOSFET, midziyo inobatwa nemaoko MOSFET, mota MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kuenderera mberi Drain Current, VGS @10V1 | 85 | A |
| ID@TC=100℃ | Kuenderera mberi Drain Current, VGS @10V1 | 58 | A |
| IDM | Pulsed Drain Current2 | 100 | A |
| EAS | Imwe Pulse Avalanche Energy3 | 110.5 | mJ |
| IAS | Avalanche Current | 47 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 52.1 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| RθJA | Thermal Resistance Junction-Ambient1 | 62 | ℃/W |
| RθJC | Thermal Resistance Junction-Nyaya1 | 2.4 | ℃/W |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(V) | Static Drain-Source On-Resistance2 | VGS=10V , ID=10A | --- | 4.5 | 6.5 | mΩ |
| VGS=4.5V , ID=5A | --- | 6.4 | 8.5 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=10V , ID=5A | --- | 27 | --- | S |
| Qg | Yese Gedhi Charge (4.5V) | VDS=20V , VGS=4.5V , ID=10A | --- | 20 | --- | nC |
| Qgs | Gate-Source Charge | --- | 5.8 | --- | ||
| Qgd | Gate-Drain Charge | --- | 9.5 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=15V , VGS=10V RG=3.3Ω ID=1A | --- | 15.2 | --- | ns |
| Tr | Rise Time | --- | 8.8 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 74 | --- | ||
| Tf | Nguva Yekudonha | --- | 7 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 2354 | --- | pF |
| Coss | Output Capacitance | --- | 215 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 175 | --- | ||
| IS | Continuous Source Current1,5 | VG=VD=0V , Simba Ikozvino | --- | --- | 70 | A |
| VSD | Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ | --- | --- | 1 | V |
