WSD4080DN56 N-chiteshi 40V 85A DFN5X6-8 WINSOK MOSFET

zvigadzirwa

WSD4080DN56 N-chiteshi 40V 85A DFN5X6-8 WINSOK MOSFET

tsananguro pfupi:

Chikamu Nhamba:WSD4080DN56

BVDSS:40V

ID:85A

RDSON:4.5mΩ 

Channel:N-chiteshi

Package:DFN5X6-8


Product Detail

Application

Product Tags

WINSOK MOSFET chigadzirwa chepamusoro

Iyo voltage yeWSD4080DN56 MOSFET ndeye 40V, ikozvino i85A, kuramba ndeye 4.5mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.

WINSOK MOSFET nzvimbo dzekushandisa

Zvishandiso zvidiki MOSFET, midziyo inobatwa nemaoko MOSFET, mota MOSFET.

WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu

AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.

MOSFET parameters

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Kuenderera mberi Drain Current, VGS @10V1

85

A

ID@TC=100℃

Kuenderera mberi Drain Current, VGS @10V1

58

A

IDM

Pulsed Drain Current2

100

A

EAS

Imwe Pulse Avalanche Energy3

110.5

mJ

IAS

Avalanche Current

47

A

PD@TC=25℃

Total Power Dissipation4

52.1

W

TSTG

Storage Temperature Range

-55 kusvika ku150

TJ

Operating Junction Temperature Range

-55 kusvika ku150

RθJA

Thermal Resistance Junction-Ambient1

62

/W

RθJC

Thermal Resistance Junction-Nyaya1

2.4

/W

 

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Kuputsa Voltage VGS=0V , ID=250uA

40

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=10A

---

4.5

6.5

VGS=4.5V , ID=5A

---

6.4

8.5

VGS(th)

Gate Threshold Voltage VGS=VDS , ID =250uA

1.0

---

2.5

V

IDSS

Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25

---

---

1

uA

VDS=32V , VGS=0V , TJ=55

---

---

5

IGSS

Gedhi-Mabviro Leakage Current VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Pamberi Transconductance VDS=10V , ID=5A

---

27

---

S

Qg

Yese Gedhi Charge (4.5V) VDS=20V , VGS=4.5V , ID=10A

---

20

---

nC

Qgs

Gate-Source Charge

---

5.8

---

Qgd

Gate-Drain Charge

---

9.5

---

Td(pa)

Batidza Kunonoka Nguva VDD=15V , VGS=10V RG=3.3Ω

ID=1A

---

15.2

---

ns

Tr

Rise Time

---

8.8

---

Td(kudzima)

Kudzima Kunonoka Nguva

---

74

---

Tf

Nguva Yekudonha

---

7

---

Ciss

Input Capacitance VDS=15V , VGS=0V , f=1MHz

---

2354

---

pF

Coss

Output Capacitance

---

215

---

Crss

Reverse Transfer Capacitance

---

175

---

IS

Continuous Source Current1,5 VG=VD=0V , Simba Ikozvino

---

---

70

A

VSD

Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25

---

---

1

V


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