WSD4076DN56 N-chiteshi 40V 76A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET chigadzirwa chepamusoro
Iyo voltage yeWSD4076DN56 MOSFET ndeye 40V, ikozvino i76A, kuramba iri 6.9mΩ, chiteshi iN-channel, uye pasuru iDFN5X6-8.
WINSOK MOSFET nzvimbo dzekushandisa
Zvishandiso zvidiki MOSFET, midziyo inobatwa nemaoko MOSFET, mota MOSFET.
WINSOK MOSFET inoenderana nedzimwe nhamba dzemhando yezvinhu
STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.
PANJIT MOSFET PJQ5442.
POTENS Semiconductor MOSFET PDC496X.
MOSFET parameters
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Kuenderera mberi Drain Current, VGS@10V | 76 | A |
| ID@TC=100℃ | Kuenderera mberi Drain Current, VGS@10V | 33 | A |
| IDM | Pulsed Drain Currenta | 125 | A |
| EAS | Imwe Pulse Avalanche Energyb | 31 | mJ |
| IAS | Avalanche Current | 31 | A |
| PD@Ta=25℃ | Total Power Dissipation | 1.7 | W |
| TSTG | Storage Temperature Range | -55 kusvika ku150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 kusvika ku150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Kuputsa Voltage | VGS=0V ,ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference ku25℃,ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=12A | --- | 6.9 | 8.5 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=10A | --- | 10 | 15 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS,ID=250uA | 1.5 | 1.6 | 2.5 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gedhi-Mabviro Leakage Current | VGS=±20V ,VDS=0V | --- | --- | ±100 | nA |
| gfs | Pamberi Transconductance | VDS=5V ,ID=20A | --- | 18 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=20V , VGS=4.5V , ID=12A | --- | 5.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.0 | --- | ||
| Qgd | Gate-Drain Charge | --- | 1.2 | --- | ||
| Td(pa) | Batidza Kunonoka Nguva | VDD=15V , VGEN=10V , RG=3.3Ω,ID=1A . | --- | 12 | --- | ns |
| Tr | Rise Time | --- | 5.6 | --- | ||
| Td(kudzima) | Kudzima Kunonoka Nguva | --- | 20 | --- | ||
| Tf | Nguva Yekudonha | --- | 11 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 680 | --- | pF |
| Coss | Output Capacitance | --- | 185 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 38 | --- |
